B. K. Esfeh, V. Kilchytska, N. Planes, M. Haond, D. Flandre and J. Raskin, "28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K," in IEEE JEDS, vol. 7, pp. 810-816, 2019.
— Wladek Grabinski (@wladek60) August 27, 2019
https://t.co/VXOuHjBAWI #paper pic.twitter.com/mT1vV0psze
低频噪声测试在新兴半导体材料和器件物理机制探索的应用研究
— Wladek Grabinski (@wladek60) August 27, 2019
Application Research of Low Frequency Noise Testing in the Exploration of Emerging Semiconductor Materials and Devices Physical Mechanismhttps://t.co/Y9lDjd1kPn #paper pic.twitter.com/6X4218ejOF
V. Veliadis, "The Impact of Education in Accelerating Commercialization of Wide-Bandgap Power Electronics [Expert View]," in IEEE Power Electronics Magazine, vol. 6, no. 2, pp. 62-66, June 2019
— Wladek Grabinski (@wladek60) August 26, 2019
doi: 10.1109/MPEL.2019.2910715 https://t.co/R14V6BDxXR #paper pic.twitter.com/NnTfIqzaRR
IEEE Annual Election: IEEE President-Elect Candidate: DEJAN S. MILOJICIC, PhD https://t.co/YGXMj7XzQM (Nominated by IEEE Board of Directors) Distinguished Technologist; Hewlett Packard Labs Palo Alto, California, USA
— Wladek Grabinski (@wladek60) August 26, 2019
https://t.co/eCpVS4yzu9 #paper pic.twitter.com/4b8EOTaQMF
B. Contreras, G. Ducoudray, R. Palomera and C. Bernal, "Automated Parameter Extraction and #SPICE #Model Modification For Gate Enclosed MOSFETs Simulation," 16th SMACD, Lausanne, Switzerland, 2019, pp. 189-192 https://t.co/nBleBsXkFf
— Wladek Grabinski (@wladek60) August 26, 2019
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. https://t.co/KoxvcDSPTh https://t.co/c5fUa76rV7 #paper pic.twitter.com/k5U7l3htU6
— Wladek Grabinski (@wladek60) August 23, 2019
#Welsh put £1.3m into #compound process #technology development https://t.co/Jhdwm4WDM8 #paper pic.twitter.com/hmOlw93jdl
— Wladek Grabinski (@wladek60) August 23, 2019
