#NanoElectronics Roadmap for #Europe: From Nanodevices and Innovative Materials to System Integration, Solid-State Electronics, 2019 https://t.co/BQz3vAjItM https://t.co/BQz3vAjItM https://t.co/miwhM4i69s #paper

#NanoElectronics Roadmap for #Europe: From Nanodevices and Innovative Materials to System Integration, Solid-State Electronics, 2019 https://t.co/BQz3vAjItMhttps://t.co/BQz3vAjItM https://t.co/miwhM4i69s #paper

— Wladek Grabinski (@wladek60) March 7, 2019

from Twitter https://twitter.com/wladek60

March 07, 2019 at 10:15PM
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#PAPER • OPEN ACCESS Gallium Nitride FET Model V V Orlov and G I Zebrev 2019 IOP Conf. Ser.: Mater. Sci. Eng. 475 012007 https://t.co/gV4Ijifd5g

#PAPER • OPEN ACCESS
Gallium Nitride FET Model
V V Orlov and G I Zebrev 2019 IOP Conf. Ser.: Mater. Sci. Eng. 475 012007 https://t.co/gV4Ijifd5g

— Wladek Grabinski (@wladek60) March 7, 2019

from Twitter https://twitter.com/wladek60

March 07, 2019 at 09:38PM
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S. Amer, M. S. Hasan, M. M. Adnan and G. S. Rose, "#SPICE #Modeling of Insulator Metal Transition: Model of the Critical Temperature," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 18-25, 2019. doi: 10.1109/JEDS.2018.2875627 https://t.co/it8osJWSPM https://t.co/vvGAsWCeYY

S. Amer, M. S. Hasan, M. M. Adnan and G. S. Rose, "#SPICE #Modeling of Insulator Metal Transition: Model of the Critical Temperature," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 18-25, 2019.
doi: 10.1109/JEDS.2018.2875627 https://t.co/it8osJWSPM pic.twitter.com/vvGAsWCeYY

— Wladek Grabinski (@wladek60) March 6, 2019

from Twitter https://twitter.com/wladek60

March 06, 2019 at 07:30PM
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Special MDPI Issue Field-Effect Transistors for Chemical Sensors https://t.co/0w9pQgMqlo #paper https://t.co/nd5EUX1KeD

Special MDPI Issue Field-Effect Transistors for Chemical Sensors https://t.co/0w9pQgMqlo #paper pic.twitter.com/nd5EUX1KeD

— Wladek Grabinski (@wladek60) March 6, 2019

from Twitter https://twitter.com/wladek60

March 06, 2019 at 08:01PM
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#EMM to offer its ultra low power 180nm #CMOS for #MPW service https://t.co/beBG061h9y #model https://t.co/6MOVGvrX97

#EMM to offer its ultra low power 180nm #CMOS for #MPW service https://t.co/beBG061h9y #model pic.twitter.com/6MOVGvrX97

— Wladek Grabinski (@wladek60) March 4, 2019

from Twitter https://twitter.com/wladek60

March 04, 2019 at 10:26PM
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F. Jazaeri and J. Sallese, "Charge-Based EPFL HEMT #Model," in IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1218-1229, March 2019. https://t.co/rFwjVUuRbM

F. Jazaeri and J. Sallese, "Charge-Based EPFL HEMT #Model," in IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1218-1229, March 2019. https://t.co/rFwjVUuRbM

— Wladek Grabinski (@wladek60) March 1, 2019

from Twitter https://twitter.com/wladek60

March 01, 2019 at 02:15PM
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IIT Kanpur: open compact modeling position

Indian Institute of Technology, Kanpur

The Office of Research & Development

Date: 15-02-2019

Indian Institute of Technology, Kanpur an Institute of national importance, has been in the forefront of engineering & technology education and research & development. The Institute derives strength from its philosophy, vision and values that has led to achievement of academic excellence and promotion of high order technological research. The Institute's R&D Division is looking for suitable Indian nationals including Persons of Indian Origins (PIOs) and Overseas Citizens of India (OCIs) for appointment on the following positions for short-term R&D Projects on contractual basis for a period of maximum five years.

Please forward this job opening with following requirements to your friends/colleagues.

http://iitk.ac.in/new/RnD_Recruitment/

• Hands-on experience of I-V (DC and Pulsed), CV, RF (CW and Pulsed)
• Expertise in Semiconductor Device Modeling and Simulation softwares
• PDK Development & Layout design
• Knowledge of Verilog-A language, PEL/ Python script.
• Strong background in semiconductor device physics
• Good writing skills
• Good Project Management skills