Apr 26, 2018

Symposium on Schottky Barrier MOS Devices 2018

"devil of savior"
It is the 40th anniversary of Institut für Halbleitertechnik und Nanoelektronik (IHTN) of the TU Darmstadt, Germany. In addition to many activities in September, a small symposium on Schottky Barrier MOS (SB-MOS) devices is planned for August 7th in Darmstadt. This is the second meeting of an enthusiastic group of Schottky barrier researchers and this year it is sponsored by the EDS German chapter and hosted by the IHTN of TU Darmstadt.
This year the symposium is organized by Dr. Tillmann Krauss, Dr. Udo E. Schwalke, Dr. Mike Schwarz and the staff of the TU Darmstadt. The symposium starts at 11:00 am in the lecture hall at the ITHN TU Darmstadt. 
The following agenda is planned:






AGENDA:

11:00 – 11:15 Welcome and introduction by Prof. Schwalke
11:15 – 11:30 “Wrap-Up of Schottky Barrier Simulation Methodologies”, Dr. Mike Schwarz (Robert Bosch GmbH, NanoP THM) (15mins)
11:30 – 12:00 “DC/AC compact modeling of Tunnel-FETs”, Prof. Alexander Kloes (NanoP THM) (30mins)
12:00 – 12:30 “Benefits of Schottky Barrier vs. Conventional Doped Source/Drain MOS devices”, Dr. John Snyder (JCap, LLC) (30mins)
12:30 – 13:30 “Lunch”
13:30 – 14:00 “Nanowire Schottky devices”, Dr. Walter Weber (TU Dresden) (30mins)
14:00 – 14:30 “Nanoelectronics: From Silicon to Carbon”, Prof. Udo Schwalke (TU Darmstadt) (30mins)
14:30 – 14:45 “Coffee Break”
14:45 – 15:15 “Transfer-free fabrication of nanocrystalline graphene field-effect sensors”, Dennis Noll (TU Darmstadt) (30mins)
15:15 – 15:45 “Modeling of neuromorphic devices”, Dr. Laurie E. Calvet (Université Paris-Sud) (30mins)

Attendees are welcome to attend the symposium. Further information are present at http://www.iht.tu-darmstadt.de/ihtn_institute/

Apr 22, 2018

Performance Potential of #Ge #CMOS Technology From a Material-Device-Circuit Perspective https://t.co/cSWOhx5xSn #paper


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April 22, 2018 at 03:19PM
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Subthreshold Modeling of TriGate Junctionless Transistors With Variable Channel Edges & Substrate Bias Effects https://t.co/ZScVIyoP3k #paper https://t.co/ZScVIyoP3k


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April 22, 2018 at 03:03PM
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Compact Drain Current #Model for #TFT Under Bias Stress Condition https://t.co/t8RWZbee7Z


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April 22, 2018 at 03:31PM
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