Mar 14, 2007
Technology news
I've found a curious article at the EE Times Europe (a nice journal, by the way). The title is "Graphene transistor to rival silicon, say researchers". Some researchers at the University of Manchester and at the Max Planck Institute claim that they have developed a transistor that is 1 atom thin. Read the full story at the link above, but I've loved the last sentence: "Professor Geim indicated graphene based circuits would not come of age before 2025 and till then silicon based devices would predominate.". This is long-term research... Now, seriously, what they are developing, if it can be used industrialy, will be a revolution, bringing single electron devices to life. However, we shall have to wait 18 years more.
Mar 13, 2007
Links
I've found some interesting links about Compact Modeling. The first one is the homepage of Dr. Zhou Xing, at the Nanyang Technological University (Singapore). A quite interesting page, with links to many of his papers and works.
The second link is more educational, and contains the material of a course in the "Grupo de Electrónica del Estado Sólido de la Universidad Simón Bolívar" (Caracas, VENEZUELA). The only drawback of this excellent page is that it is in a mixture of Spanish and English. However, the completeness of the page fully justifies a visit.
The second link is more educational, and contains the material of a course in the "Grupo de Electrónica del Estado Sólido de la Universidad Simón Bolívar" (Caracas, VENEZUELA). The only drawback of this excellent page is that it is in a mixture of Spanish and English. However, the completeness of the page fully justifies a visit.
Mar 9, 2007
Carbon Nanotubes
I've been informed that the Journal of Semiconductor Science and Technology freely distributes (up to april, 18th) its special issue on charge and transport on Carbon Nanotubes. It is a very interesting topic, and the papers are both reviews and original research. I think it is an opportunity not to be missed.
Mar 8, 2007
Compact charge and capacitance models of nanowire MOSFETs
The compact modeling of nanowire MOSFETs (also called surrounding gate MOSFETs or Gate All Around MOSFETs) is a hot topic. The first compact drain current models were published in 2004:
Researchers are now addressing the compact modeling of charges and capacitances. In January 2007, in IEEE Transactions on Electron Devices, the first compact model for charges and capacitances of surrounding gate MOSFETs was published: Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs, by Moldovan O., Jiménez D., Roig J. and Iñiguez B.
In March 2007, a new charge model for surrounding gate MOSFETs has been published in IEEE Transactions on Electron Devices: Analytic Charge Model for Surrounding-Gate MOSFETs, by Yu B., Lu W.-Y., Lu H. and Taur, Y.
Both models are based on the electrostatic potential soultion obtained by D. Jimenez et al. (Continuous analytic I-V model for surrounding-gate MOSFETs, IEEE Electron Device Letters, August 2005)
from the 1-D Poisson's equation in the radial direction (neglecting the effect of the lateral field). B. yu et al use the initial formulation proposed by Jimenez; charge and capacitances are written in terms of a variable which depends on the surface potential, and is calculated iteratively at the source and drain ends of the channel. Moldovan uses a charge-based formulation: from a charge control model, developed by B. Iñiguez et al. (Explicit continuous model for long-channel undoped surrounding gate MOSFETs, IEEE Transactions on Electron Devices, August 2005)
from the analysis of D. Jimenez et al, analytical expressions of charges and capacitances are obtained in terms of the mobile charge sheet densities at the source and drain ends of the channel; explicit expressions of the mobile charge sheet denisities are finally used.
Researchers are now addressing the compact modeling of charges and capacitances. In January 2007, in IEEE Transactions on Electron Devices, the first compact model for charges and capacitances of surrounding gate MOSFETs was published: Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs, by Moldovan O., Jiménez D., Roig J. and Iñiguez B.
In March 2007, a new charge model for surrounding gate MOSFETs has been published in IEEE Transactions on Electron Devices: Analytic Charge Model for Surrounding-Gate MOSFETs, by Yu B., Lu W.-Y., Lu H. and Taur, Y.
Both models are based on the electrostatic potential soultion obtained by D. Jimenez et al. (Continuous analytic I-V model for surrounding-gate MOSFETs, IEEE Electron Device Letters, August 2005)
from the 1-D Poisson's equation in the radial direction (neglecting the effect of the lateral field). B. yu et al use the initial formulation proposed by Jimenez; charge and capacitances are written in terms of a variable which depends on the surface potential, and is calculated iteratively at the source and drain ends of the channel. Moldovan uses a charge-based formulation: from a charge control model, developed by B. Iñiguez et al. (Explicit continuous model for long-channel undoped surrounding gate MOSFETs, IEEE Transactions on Electron Devices, August 2005)
from the analysis of D. Jimenez et al, analytical expressions of charges and capacitances are obtained in terms of the mobile charge sheet densities at the source and drain ends of the channel; explicit expressions of the mobile charge sheet denisities are finally used.
Mar 6, 2007
Special Compact Modeling Session in the MIXDES'07 Conference
Dr Wladek Grabinski, chair of the MOS-AK Group (MOS Modeling and Parameter Extraction Working Group), is organizing, as in the last years, a Special Compact Modeling Session in the frame of the 14th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES'07).
MIXDES'07 is held in the beautiful town of Ciechocinek (a renowned spa in Poland), 21-23 June 2007. The deadline for regular paper submission is March 12 2007. Prospective authors for the Special Compact Modeling Session should contact Dr. Wladek Grabinski.
MIXDES has become one of the most important microelectronics conferences in Central Europe. Every year an important number of very relevant contributions from all around the world (of course, the majority from Europe) are presented at MIXDES. Prestigeous researchers are invited to give talks for the plenary session and also for the special sessions.
This year, one of the invited presentations, given by myself, will be devoted to the TFT Compact Modeling. It is entitled: "Modeling of Thin Film Transistors for Circuit Simulation"
The Special Compact Modeling Session, held every year under the umbrella of MIXDES, has become a very interesting forum for the discussion and the exchange of information regarding compact modeling issues.
I recommend compact modeling researchers to participate in the MIXDES Special Compact Modeling Session. Contributions are always of very high quality. And I wish to mention that MIXDES has always a superb social programme.
MIXDES'07 is held in the beautiful town of Ciechocinek (a renowned spa in Poland), 21-23 June 2007. The deadline for regular paper submission is March 12 2007. Prospective authors for the Special Compact Modeling Session should contact Dr. Wladek Grabinski.
MIXDES has become one of the most important microelectronics conferences in Central Europe. Every year an important number of very relevant contributions from all around the world (of course, the majority from Europe) are presented at MIXDES. Prestigeous researchers are invited to give talks for the plenary session and also for the special sessions.
This year, one of the invited presentations, given by myself, will be devoted to the TFT Compact Modeling. It is entitled: "Modeling of Thin Film Transistors for Circuit Simulation"
The Special Compact Modeling Session, held every year under the umbrella of MIXDES, has become a very interesting forum for the discussion and the exchange of information regarding compact modeling issues.
I recommend compact modeling researchers to participate in the MIXDES Special Compact Modeling Session. Contributions are always of very high quality. And I wish to mention that MIXDES has always a superb social programme.
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