Nov 17, 2021

[mos-ak] 2nd Announcement and C4P] 14th International MOS-AK Workshop Silicon Valley, Dec. 17, 2021

Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
14th International MOS-AK Workshop
Silicon Valley, Dec. 17, 2021
2nd Announcement and C4P

Together with local host, as well as all the Extended MOS-AK TPC Committee, would like to invite you to the 14th International MOS-AK Workshop Compact/SPICE Modeling Workshop which will be organized as the virtual/online event on Dec.17, 2021, in timeframe of IEDM and Q4 CMC Meetings.

Planned virtual 14th International MOS-AK Workshop aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring academic and industrial experts in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Topics to be covered include the following among other related to the compact/SPICE modeling and its Verilog-A standardization:
  • Compact Modeling (CM) of the electron devices
  • Advances in semiconductor technologies and processing
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • Open Source (FOSS) TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, Organic TFT, CMOS and SOI-based memory
  • Microwave, RF device modeling, high voltage device modeling
  • Nanoscale CMOS, BiCMOS, SiGe, GaN, InP devices and circuits
  • Technology R&D, DFY, DFT and reliability/aging IC designs
  • Foundry/Fabless Interface Strategies
Online Abstract Submission to be open (any related enquiries can be sent to abstracs@mos-ak.org)

Online Event (any related enquiries can be sent to register@mos-ak.org)

Important Dates: 
  • Call for Papers: Oct. 2021
  • 2nd Announcement: Nov. 2021
  • Final Workshop Program: Dec.2 2021
  • MOS-AK Workshop: Dec.17, 2021
    in timeframe of IEDM and Q4 CMC Meetings
W.Grabinski for Extended MOS-AK Committee

WG171121

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Nov 16, 2021

[paper] Extended gate FET pH Sensor

Shaiful Bakhtiar Hashim, Zurita Zulkifli, Sukreen Hana Herman
Design and Simulation of Electrochemical Equivalent Circuit for Extended gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII
researchsquare.com: November 11th, 2021
DOI:10.21203/rs.3.rs-1031896/v1
  
College of Engineering, UiTM, Selangor (MY)


Abstract: A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.
Fig: EGFET measurement setup

Acknowledgement: The work is partially supported by KEPU Grant ( 600- RMC/KEPU 5/3 (007/2021)) from Universiti Teknologi MARA