Learning with brain chemistry https://t.co/UJRbFdHuUh #paper https://t.co/PB4Ty0moUg

Learning with brain chemistry https://t.co/UJRbFdHuUh #paper pic.twitter.com/PB4Ty0moUg

— Wladek Grabinski (@wladek60) June 16, 2020

from Twitter https://twitter.com/wladek60

June 16, 2020 at 05:39PM
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#GNU #Health #Embedded #OpenSource Health Platform Works on Raspberry Pi 3/4, and soon Olimex SBC's https://t.co/mIXu3NfQPy https://t.co/I0tkTqXijs

#GNU #Health #Embedded #OpenSource Health Platform Works on Raspberry Pi 3/4, and soon Olimex SBC's https://t.co/mIXu3NfQPy pic.twitter.com/I0tkTqXijs

— Wladek Grabinski (@wladek60) June 16, 2020

from Twitter https://twitter.com/wladek60

June 16, 2020 at 04:46PM
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[paper] TFT Compact Modeling

Arun Dev Dhar Dwivedi, Sushil Kumar Jain, Rajeev Dhar Dwivedi and Shubham Dadhich

Numerical Simulation and Compact Modeling 

of Thin Film Transistors for Future Flexible Electronics

Submitted: July 4th 2019Reviewed: October 28th 2019Published: June 10th 2020

DOI: 10.5772/intechopen.90301

Abstract: In this chapter, we present a finite element method (FEM)-based numerical device simulation of low-voltage DNTT-based organic thin film transistor (OTFT) by considering field-dependent mobility model and double-peak Gaussian density of states model. Device simulation model is able to reproduce output characteristics in linear and saturation region and transfer characteristics below and above threshold region. We also demonstrate an approach for compact modeling and compact model parameter extraction of organic thin film transistors (OTFTs) using universal organic TFT (UOTFT) model by comparing the compact modeling results with the experimental results. Results obtained from technology computer-aided design (TCAD) simulation and compact modeling are compared and contrasted with experimental results. Further we present simulations of voltage transfer characteristic (VTC) plot of polymer P-channel thin film transistor (PTFT)-based inverter to assess the compact model against simple logic circuit simulation using SmartSpice and Gateway.

Fig.: Schematic cross-sectional diagram of organic TFTs 

along with the chemical structure of SAM and organic semiconductor.

Acknowledgments: The authors are thankful to SERB, DST, Government of India, for the financial support under Early Career Research Award (ECRA) for Project No. ECR/2017/000179.

#Intel’s #10nm Node: Past, Present, and Future [EETimes] https://t.co/P3Fi3xUogJ #paper https://t.co/QoFX5z22br

#Intel’s #10nm Node: Past, Present, and Future [EETimes] https://t.co/P3Fi3xUogJ #paper pic.twitter.com/QoFX5z22br

— Wladek Grabinski (@wladek60) June 16, 2020

from Twitter https://twitter.com/wladek60

June 16, 2020 at 02:31PM
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[slides] (Ultra-) Wide-Bandgap Devices

(Ultra-) Wide-Bandgap Devices: Reshaping the Power Electronics Landscape

Presenter Dr. Yuhao Zhang, Assistant Professor,
Center for Power Electronics Systems, Virginia Tech

IEEE EDS SCV-SF Seminar 

Friday, June 12, 2020 at 12PM – 1PM PDT

Abstract: Power electronics is the application of solid-state electronics for the control and processing of electrical energy. It is used ubiquitously in consumer electronics, electric vehicles, data centers, renewable energy systems, and smart grid. The power semiconductor device, as the cornerstone technology in power electronics, is key to improving the efficiency, cost and form factor of power electronic systems.  Recently, the power electronics landscape has been significantly reshaped with the production and application of power devices based on wide-bandgap (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC). Besides advancing the performance of traditional power systems, WBG devices have also enabled many emerging applications that are beyond the realm of silicon (Si) as well as changed the manufacturing paradigm of power electronics. On the horizon is the power devices based on ultra-wide-bandgap (UWBG) materials, which promises superior performance over GaN and SiC and is at the relatively early stage of research development.  This talk will provide a comprehensive overview of major WBG and UWBG power device technologies, spanning materials, devices, reliability and applications. Some research projects in the PI’s group in collaboration with industry will also be introduced.

FIG: WBG Semiconductor: Superior Power Semiconductor Over Si

The seminar presentation is now available on our IEEE EDS SCV-SF webpage:
http://site.ieee.org/scv-eds/files/2020/06/SCV_SF_EDS_Yuhao_Zhang_excerpt.pdf

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