Mar 10, 2020

Senior and Junior Researcher positions at URV, in Tarragona, Spain

The Nanoelectronic and Photonic Systems (NEPHOS) Group at the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV) in Tarragona, Spain, is looking for candidades for long-term Senior and Junior Researcher Contracts funded by URV and the Spanish Ministry of Science.

Candidates with less than 7 years of postdoctoral research outside Spain can apply for the Junior position, with a  minimu duration of 4 years.

Candidates with more than 7 years of postdoctoral research outside Spain can apply for the Junior position, which after 4 years can become permanent.

The selected candidates will propose  research and teaching project together with the hosting group at URV.

Candidates must have performed important contributions in the field of semiconductor devices.

The NEPJHOS Group at URV is currently working on the physics, characterization and modeling (in particular compact modeling) of emerging devices, and also in the fabrication and characterization of nanostructured organic photovoltaic devices. Regarding emerging devices, the present interests of the group at URV are the characterization and modeling of nanowire MOSFETs, GaN HEMTs, Graphene and 2D semiconductor FETs and organic and oxide TFTs. Other interests are the fabrication of polymeric TFTs and the modeling of organic solar cells.

Candidates must send their CVs, by March 18 to:

benjamin.iniguez@urv.cat

Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.

Tarragona is one of the most important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.

#paper A 3D map of atoms in 2D materials [Nature Materials, doi:10.1038/s41563-020-0646-3] Scanning atomic electron tomography measurements reveal the 3D local structure around single dopant atoms in 2D transition metal dichalcogenides https://t.co/oeNFCdXZTj https://t.co/2zG0FdpduE


from Twitter https://twitter.com/wladek60

March 10, 2020 at 04:15PM
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#paper: Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications by Yuehang Xu First published: 09 March 2020 https://t.co/886FiJL5zU https://t.co/xSbxKCGFub https://t.co/cbQzWbTh4Z


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March 10, 2020 at 02:57PM
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François Anceau, Founder of CMP, has died. He was 80. "Today is a sad day for the entire CMP family," CMP’s Director Kholdoun Torki said. "François was a visionary, he influenced generations of microelectronic developments in France" https://t.co/K9ASeQmTsX #paper https://t.co/mT5RVrnxme


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March 10, 2020 at 11:23AM
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article reached 1500 reads


A. Bazigos, M. Bucher, J. Assenmacher, S. Decker, W. Grabinski and Y. Papananos, "An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs," in IEEE TED, vol. 58, no. 11, pp. 3751-3758, Nov. 2011.

Abstract: The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to inconsistent results and incorrect interpretation of effects, such as drain-induced barrier lowering in advanced CMOS halo-implanted devices. The generalized adjusted CC method is based on the theory of the charge-based MOS transistor model. It introduces an adjusted current criterion, depending on VDS, allowing to coherently determine VTH for the entire range of V DS from linear operation to saturation. The method uses commonly available ID versus VG data with focus on moderate inversion. The method is validated with respect to the ideal surface potential model, and its suitability is demonstrated with technology-computer-aided-design data from a 65-nm CMOS technology and measured data from a 90-nm CMOS technology. Comparison with other widely used threshold voltage extraction methods is provided.