SMACD-2012

The International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) will be held in Seville (Spain) in September 2012 as a dedicated forum devoted to Design Methods and Tools for Analog, Mixed-signal, RF (AMS/RF) and multi-domain (MEMs, nanoelectronic, optoelectronic, biological, etc.) integrated circuits and systems.

SMACD 2012 topics of interest include, but are not limited, to:

• Performance modeling

• Power and thermal modeling

• Reliability modeling

• Variability modeling

• Compact device and circuit modeling

• Multi-domain modeling (optoelectronics, MEMs, biological, biochemical, etc.)

• Modeling languages and applications

• Linear and non-linear model reduction

• Circuit and system theory and applications

• Behavioral modeling and simulation

• Numerical and symbolic simulation methods

• Distributed and parallel circuit simulation

• Analysis and simulation techniques for emerging nanoscale devices

• Analysis of reliability effects: aging, electro-migration, BTI, etc.

• Simulation and estimation methods of variability and yield

• Fault modeling and simulation

• System-level specification and simulation

• Novel system-level design flows

• Innovative design methodologies enabled by behavioral, performance, and/or symbolic modeling techniques

• Synthesis methods in multi-domain (MEMs, electro-optical, etc.) systems

• Physical synthesis

• High-frequency modeling, simulation and design

• Low-power design techniques

• Parasitic-aware synthesis

• Variability-aware and reliability-aware design methodologies

• Test and design-for-test methods

• Language-based synthesis techniques

• Optimization methods applied to circuit and system design: high-level synthesis, structural synthesis, sizing, etc.

If you want to know more about the SMACD Conference series, click here.

IM3OLED project to develop multi-scale OLED modelling tool

The EU-funded IM3OLED (Integrated Multidisciplinary & Multiscale Modeling for Organic Light-Emitting Diodes) project has officially been launched.

IM3OLED aims to help the OLED industry speed up development by creating new modelling software that allows a more systematic R&D process. This software toolset will predictively model OLEDs in 3D and at all length scales – from molecular to large-area devices. It will include molecular calculations, electrical and optical simulation, 1D-3D light extraction and scaling / integration effects.
An important aspect of software will be the inclusion of dynamic feedback loops, enabling developers to accurately predict how changes in one area of OLED development affect other areas. This will allow multiple OLED properties to be optimised simultaneously.
The overall device efficiency of an OLED depends on many factors:

• the properties of the light emitting molecules
• deposition on to the substrate
• integration into a device
• extracting the light from the active layer and the device
• heat management and more

It is further complicated as many of these factors are interlinked – e.g. how the device heats up in operation may affect the molecules’ ability to generate light and the way light travels through the device.
This makes it extremely difficult to predict how innovations in one area will affect performance in others, leading to a trial-and-error approach in R&D.

Stephan Harkema, project coordinator, said, “IM3OLED will develop, evaluate and validate a predictive multi-scale and multi-disciplinary modeling tool. Making such a tool available will accelerate progress of OLEDs for lighting applications and allow the European OLED industry to strengthen its leading position in this environmentally important, global market.”
IM3OLED brings together industrial and academic partners from across Europe and the Russian Federation and is coordinated by TNO/Holst Centre and by National Research Nuclear University MEPhI.
Industrial partners include OLED manufacturer Philips Electronics and specialist in simulation software SMEs Fluxim of Switzerland and Kintech of Russia.
Academic partners include leading computational physics and atomic / molecular modelling groups from the Zurich University of Applied Science (ZHAW) and Russian Academy of Sciences’ Photochemistry Center (PCC RAS).
Funded through the European Union’s Seventh Framework Programme (FP7NMP Grant no 295368), the EU portion of the IM3OLED project will run for 30 months until late 2013.
www.im3oled.eu www.holstcentre.com www.mephi.ru

[mos-ak] MOS-AK/GSA calendar 2012

The MOS-AK/GSA Compact Modeling Committee
have scheduled following four workshops in 2012
<http://www.gsaglobal.org/events/calendar.asp>.
Please mark your calendars and make plans to join us:

*Q1* MOS-AK/GSA Modeling Workshop
http://www.mos-ak.org/india/
DATE: March 16-18, 2012
LOCATION: Noida (U.P.), India

*Q2* MOS-AK/GSA Modeling Workshop
http://www.mos-ak.org/dresden/
DATE: April 26-27, 2012
LOCATION: Dresden, Germany

*Q3* MOS-AK/GSA Modeling Workshop
http://mos-ak.org/bordeaux/
DATE: Sept.21, 2012
LOCATION: Bordeaux, France

*Q4* MOS-AK/GSA Modeling Workshop
http://www.mos-ak.org/
DATE: Dec'2012
LOCATION: San Francisco, CA

Extended MOS-AK/GSA Compact Modeling Committee
http://mos-ak.org/committee.html

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IEEE EDS Webinar: Physics and Technology of Advanced Solar Cells

This email is being sent on behalf of Paul Yu, EDS President,

and Meyya Meyyappan, EDS Vice President of Educational Activities.

Dear Colleague,

As part of our commitment to enhancing the value of membership in EDS, and to advancing the society's mission of fostering the professional growth of its members, we are pleased to invite you to attend a very special Webinar entitled Physics and Technology of Advanced Solar Cells presented by EDS Distinguished Lecturer and IEEE Fellow Prof. Vikram Dalal of Iowa State University.  More info available at http://www.mrc.iastate.edu/NewStaff/VikramDalal.htm.

The webinar will take place on Tuesday, February 14 at 3:00 PM Eastern Time (USA). Register for this event

This event is the follow-up to Prof. Dalal's successful talk entitled Introduction to Physics and Technology of Solar Cells which we presented in December.

Watch Replay.

(Note, you will need your IEEE web account login to register and access the video replay)

Title: Physics and Technology of Advanced Solar Cells
Abstract: The Shockley-Queisser (SQ) limit establishes an upper bound to the conversion efficiency of a single junction solar cell. In this talk, the various approaches to overcome the SQ limit will be discussed.  Multiple junction solar cells, multi-exciton solar cells, intermediate gap solar cells, and photon up and down conversion to increase efficiency beyond the SQ limit will also be addressed.  Multi-junction approaches have succeeded in producing highly efficient III-V solar cells.

In addition, Prof. Dalal will discuss thin film solar cells.  These cells, which use polycrystalline, amorphous or organic materials with inferior electronic properties, are now beginning to be widely used for both large scale utility power and for building-integrated and isolated products.  Prof. Dalal will address the special physical considerations needed to make efficient solar cells out of these materials, including new schemes for enhancing optical absorption and discuss the status of various technologies.

Attendance will be limited to 500 attendees, offered on a first come, first served basis.  As this event is being offered exclusively
to EDS members we request that you do not forward this invitation. Also, given the overwhelming response to our previous webinar,
it would help if you could team up with other EDS members at your institution and thus save a log in port.

Sincerely,

Paul Yu,
EDS President

Meyya Meyyappan,
EDS Vice President of Educational Activities.

IEEE, 445 Hoes Lane, Piscataway, NJ 08854 USA

< http://www.ieee.org/ >

 

New SPICE Model for Silicon Carbide Power MOSFET

Cree Releases SPICE Model for Silicon Carbide Power MOSFET

Behavior-based model enables power electronic design engineers to quantify benefits of silicon carbide MOSFETs in board-level circuit simulation

See the original press release, or read it here:

DURHAM, N.C., February 6, 2012 — Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, has expanded its design-in support for the industry’s first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers can easily evaluate the benefits Cree’s SiC Z-FET™ MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree’s behavior-based, temperature-dependent SPICE model is compatible with the LT spice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of Cree CMF10120D and CMF20120D Z-FETs in board-level circuit designs.

Cree SiC MOSFETs are capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC MOSFET SPICE model adds to Cree’s comprehensive suite of design-in support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement SiC power devices into the next generation of power systems.

The Cree SiC MOSFET SPICE model is available for download at www.cree.com/power/mosfet.asp. In addition, customers can download published specifications and detailed design guidelines and request samples. For more information about Cree’s SiC power devices, please visit www.cree.com/power.

About Cree
Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs, and LED lighting solutions.

Cree's product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.

For additional product and company information, please refer to www.cree.com

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including customer acceptance of our products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2011, and subsequent filings.

Cree is a trademark registered in the U.S. Patent and Trademark Office by and Z-FET is a trademark of Cree, Inc.

Media Contact:
Michelle Murray
Cree, Inc.
Corporate Communications
(919) 313-5505
michelle_murray@cree.com