I copy from LinkedIn:
Looking for PhD/ MS candidates in device physics , modelling back ground for one of the Semiconductor research and development centre at Bangalore .
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Oct 15, 2010
Oct 13, 2010
Accurately simulate an LED
Accurately simulate an LED: " View as PDF Read More Design IdeasSolid-state-lighting applicatio..."
SEMI urges less bureaucratic approach to EU research funding
SEMI urges less bureaucratic approach to EU research funding: "San Jose-based manufacturing organization SEMI is advocating for a simplifica..."
Oct 5, 2010
The Nobel Prize in Physics 2010 (graphene)
The Royal Swedish Academy of Sciences has decided to award the Nobel Prize in Physics for 2010 to Andre Geim and Konstantin Novoselov, both at University of Manchester, UK “for groundbreaking experiments regarding the two-dimensional material graphene”.
Andre Geim, Dutch citizen. Born 1958 in Sochi, Russia. Ph.D. 1987 from Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia. Director of Manchester Centre for Meso-science & Nanotechnology, Langworthy Professor of Physics and Royal Society 2010 Anniversary Research Professor, University of Manchester, UK.
Konstantin Novoselov, Brittish and Russian citizen. Born 1974 in Nizhny Tagil, Russia. Ph.D. 2004 from Radboud University Nijmegen, The Netherlands. Professor and Royal Society Research Fellow, University of Manchester, UK.
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Andre Geim, Dutch citizen. Born 1958 in Sochi, Russia. Ph.D. 1987 from Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia. Director of Manchester Centre for Meso-science & Nanotechnology, Langworthy Professor of Physics and Royal Society 2010 Anniversary Research Professor, University of Manchester, UK.
Konstantin Novoselov, Brittish and Russian citizen. Born 1974 in Nizhny Tagil, Russia. Ph.D. 2004 from Radboud University Nijmegen, The Netherlands. Professor and Royal Society Research Fellow, University of Manchester, UK.
Read the press release...
AWR Announces New PDK for Cree GaN HEMT MMIC Foundry
The Cree GaN HEMT MMIC process features high power density (4-6 watts/mm) transistors, slot vias, and high reliability (up to 225ÂșC operating channel temperatures), as well as scalable transistors. [more]
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