Call for Papers: ICGCS 2010

Global warming, climate change, and sustainability have profound impacts on our lives. The grand challenge faced by circuits and systems communities is to design green electronic devices and systems that consume less energy, thus lead to the reduction of global CO2 emission. The annual International Conference on Green Circuits and System (ICGCS) is our response to this grand challenge. ICGCS aims to address issues in climate change and limited suppliers and become a major international forum for researchers and engineers to exchange their latest findings in technologies related to green circuits and systems. ICGCS is a meeting place for scholars, scientists, educators, students, engineers, entrepreneurs, and managers from different disciplinarians to foster collaborations and to solve complex read world problems. It covers a wide range of topics including, but not limited to, the followings:

• Green Transistors and Devices
• Low Power Low Voltage Techniques for Analog, Mixed-Signal, Digital Circuits
• Sub-threshold Circuit Design
• Energy Efficient Analog Signal Processing Techniques
• Computationally Efficient Digital Signal Processing Techniques
• Signal Processing for Communications
• Visual Signal Processing Techniques and Multimedia Systems
• Optimization Techniques
• Self-Powered Circuits and Systems
• Adaptive and Reconfigurable Circuits and Systems
• Scalable and Power Aware Systems
• Energy Harvesting
• Energy and Power Management
• Green Power Electronic Circuits and Systems
• Renewable Energy
• MEMS and Sensors for Energy Management
• Environmental Sensing, Control and Protection
• Circuits and Systems Technologies for Recycling and Pollution Control
• Emerging Technologies for Green Circuits and Systems

The inaugural conference, ICGCS 2010, will be held in June 2010 in Shanghai, the city hosting World Expo 2010. The participants not only have the opportunities to share their new findings in green circuits and systems but also to witness latest development as showcased in World Expo 2010.

The deadline for submission of Papers is on February 22, 2010. For more details, please visit: http://www.icgcs.org. We welcome you to contribute your work(s) to ICGCS2010 and hope to see you in Shanghai.

Contact: Yong Lian and Tor S. Lande; ICGCS 2010 Technical Program Chairs

Open, One year post doc position for development of HV transistor SPICE models

Education/Experience:

• PhD or Master/Dipl. Ing. in Physics or Electronic Engineering
• Experience in SPICE modeling (e.g. BSIM, EKV, PSP, HiSIM)

Place of Employment:

• Unterpremstaetten/Graz , Austria

Job Description / tasks responsibilities:

• Development of HV transistor SPICE models
• Parameter extraction and measurements for SPICE models
• Project management within the COMON project
• Writing documents and deliverables

Contact: Dipl. Ing. Ehrenfried Seebacher
Senior Manager Process and Device Characterization - Modeling

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austriamicrosystems AG
Operations - Process Developments
Schloss Premstaetten
8141, Unterpremstaetten, Austria
Tel: +43 3136 500 5487
Fax: +43 3136 500 5755

A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs

Venkatnarayan Hariharan, Juzer Vasi, V. Ramgopal Rao; Solid-State Electronics, Volume 53, Issue 2, February 2009, Pages 218-224

Abstract: In developing the drain current model of a symmetrically driven, undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET), one encounters a transcendental equation relating the value of an intermediate variable β (which is related to the inversion charge areal density and also surface-potential) to the gate and drain voltages; as a result, it doesn’t have a closed form solution. From a compact modeling perspective, it is desirable to have closed form expressions in order to implement them in a circuit simulator. In this paper, we present an accurate closed form approximation for the inversion charge areal density, based on the Lambert-W function. We benchmark our approximation against other existing approximations and show that our approximation is computationally the most efficient and numerically the most robust, at a reduced but acceptable accuracy. Hence, it is suitable for use in implementing inversion charge based compact models.

DOI: 10.1016/j.sse.2008.11.006

Symmetric linearization method for double-gate and surrounding-gate MOSFET models

Gajanan Dessai, Aritra Dey, Gennady Gildenblat, Geert D.J. Smit; Solid-State Electronics, Volume 53, Issue 5, May 2009, Pages 548-556

Abstract: Symmetric linearization method is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFET. This leads to a core compact model of certain multiple-gate transistors that has the form almost identical to that used in a standard PSP MOSFET model. The accuracy of the proposed technique is verified by comparison with the exact results. The new core is compatible with the previous version of the double gate MOSFET model that has been found in agreement with the experimental data including short-channel effects and frequency response.

DOI: 10.1016/j.sse.2009.01.020

CEA-LITEN selects InfiniScale for Organic Electronic devices modeling

InfiniScale today announced that CEA-LITEN has selected InfiniScale’s TechModeler for its organic electronic devices modeling needs.
You can see by their public declarations that they are quite happy:

“InfiniScale’s modeling tool allowed us to shrink our development cycle by a large factor” commented Isabelle Chartier Organic Electroniv program manager at CEA-LITEN- “CEA-Liten is deeply involved in printing Organic Electronic devices and circuits, we target to demonstrate, before the end of 2009, a first all printed organic CMOS circuit. Modeling our devices versus design and technology parameters is critical for our technological developments. Therefore, fast prototyping and fast development cycles achieved with Infiniscale is key to stay on top of the Emerging and promising Organic Electronic market”

“We are pleased by CEA-LITEN commitment “said Dr Firas MOHAMED, CEO of Infiniscale “InfiniScale has taken position on this new industry where there is a need to grow at a fastest possible pace. After a close collaboration through an important R&D project on organic electronic (Printronics a Minalogic cluster project), CEA-LITEN decided to adopt our technology for its advanced organic devices modeling.

We are very pleased to see that our modeling technology, which is already recognized by major semi-conductor players, kept its promise for the organic ambitious industry”.

You can read the full press release here.