RF Simulators

I've seen that Agilent Technologies announces a breakthrough in high-frequency SPICE simulation technology for high-speed digital board design. It seems that they have just realized that simulation in the frequency domain is faster than that in time domain. I don't grasp the novelty of the news, because they have been doing so for a long time. However, the point I'd like to make is that a good model for RF design not only has to be accurate, etc.... but it also has to take into account the possibility of being used in a simulator oriented to frequency.
It seems then that in a good model to be used in an RF environment, we should be careful enough as to explicitly state the equations for the S parameters, and not only for the capacitances. Thus, we should present both versions of the model: one with the capacitances, and another one with the S-parameters. It would be then a question of choosing the most appropriate set of equations to simulate.

Back to work

Here I am, back to real world after two weeks of conferences. I must confess that I'm happy to be at home again. Well, to the point. The last one of the conferences was a bit disappointing, because it was mainly dedicated to solar cells in the oral sessions. This is so because it was organized by the Solar Energy Institute. The poster sessions were more interesting, with many different topics, though the only ones dedicated to compact modeling were some posters from B. Iñiguez and Toni Lazaro, dedicated mainly to double gate and RF modeling. Quite interesting, even if they didn't win the best paper award (by the way, only five of the six awards went to people related to the organizers).
Another poster I was happy to see was one about pi-gate FETs, where they were modeling the transistor using some device simulator. The funny thing was to see the double threshold effect, with some explanantions about it.