Before and after

from CrunchGear by John Biggs:

Big Success in Dresden for new DATE 2010

The conference again proved its World-Wide leadership with attendees from 39 Countries. Germany accounts for a fourth of the attendees, followed by USA and France. China showed a substantial increase and was already number 4 of the participating countries. The number of attendees (1,300) again reached the very high level of the previous years [more].

The proceedings of DATE10 are now available on-line.

[mos-ak] Final Program MOS-AK/GSA Workshop in Rome

Please visit the MOS-AK/Rome Workshop web site:
http://www.mos-ak.org/rome/ with final workshop program

April 8-9, 2010 Sapienza Università di Roma

* Free On-line Registration Form:
http://www.mos-ak.org/rome/index.php#Register

* Venue and Recommended Hotels:
http://www.mos-ak.org/rome/index.php#Venue

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Angelov FET Model Documents at Uni.Chalmers

New web page with collection of some documents, files and papers on Angelov's FET Large Signal Nonlinear Transistor Mode [link]

Top 10 cited papers in Solid-State Electronics

I wish to congratulate some friends, because their papers are ranked 4th and 5th in the top 10 cited papers published in Solid-State Electronics... and these are also the first papers in the list about compact modelling...
Many congratulations Adelmo, Francisco, Jean-Michel and Christian !

By the way, the papers are:

Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs

Volume 49, Issue 4, 2005, Pp 640-647
Ortiz-Conde, A. | Sánchez, F.J.G. | Muci, J.


A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
Volume 49, Issue 3, 2005, Pp 485-489
Sallese, J.-M. | Krummenacher, F. | Prégaldiny, F. | Lallement, C. | Roy, A. | Enz, C.