Tuesday, 4 October 2016

A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization


N. Karumuri; G. Dutta; N. DasGupta; A. DasGupta, "A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization," in IEEE Transactions on Electron Devices , vol.PP, no.99, pp.1-7 doi: 10.1109/TED.2016.2605130
Abstract: A physics-based simple and accurate compact model of drain current for GaN-based high electron mobility transistors (HEMTs) is presented. The model is developed using analytical relations for charges in the 2-D electron gas and barrier layer. For the first time, a simple charge linearization approach has been used for GaN-based HEMTs. The access regions are accurately modeled using transistors. The model is rigorously validated over a wide range of geometries and parameters for AlGaN/GaN and AlInN/GaN HEMTs. The model also passes the DC Gummel symmetry test.
keywords: {Computational modeling; Electric potential; HEMTs; Integrated circuit modeling; MODFETs; Threshold voltage;2-D electron gas (2-DEG) charge;AlGaN/GaN;AlInN/GaN;GaN high electron mobility transistor (HEMT); Gummel symmetry; SPICE model.;charge linearization; charge-based; compact model;drain current},
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