Thursday, 18 August 2016

ECSCRM 2016 Tutorial Day Announcement

ECSCRM 2016
Announcement of Tutorial Day
Sept.25, 2016, Halkidiki, GREECE

The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) will be held on Sept. 25-29 in Halkidiki, Greece

Early Registration: August 20, 2016
Late Abstract Submission: August 23, 2016
Please see the conference websitehttp://ecscrm2016.org/

We are very happy to announce that a SiC MOSFET Tutorial Day is planned for Sunday, Sept.25, as a satellite event of ECSCRM 2016:

Tutorial Day Title: Learn how to develop your SiC MOSFET
in one day!

The main objective of the Tutorial is to introduce the audience to what is arguably the hottest topic in SiC devices: the technology of SiC MOSFETs. The Tutorial is primarily intended for PhD students working on SiC and possessing a solid technical background in semiconductor devices, as well as for semiconductor technology professionals who want to better familiarize themselves in this subject. Its concept/setup is to deliver all key information that will allow the audience to understand most of the content of any paper dedicated to SiC MOSFETs. The topics to be presented and the corresponding speakers are:
  1. Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)
    Prof. T. Kimoto (Kyoto University, Japan)
  2. Physics and technology of SiO2/SiC interface
    Dr. Kevin Matocha (Monolith, USA)
  3. Other MOSFET processing (ohmic contacts, implantation, passivation, specific issues related to device geometry,…)
    Dr. Victor Veliadis (PowerAmerica/NCSU, USA)
  4. SiC MOSFET device physics and design (operation principles, charge model, TCAD simulation)
    Prof. J. Cooper (Purdue University, USA)
  5. SiC MOSFET electrical static and dynamic characterization, electrical stresses, device reliability
    Prof. A. Castellazzi (Nottingham University, UK)
  6. SiC MOSFET as circuit components – targeted applications
    Dr. Ljubisa Stevanovic (GE, USA)
  7. Summarizing remarks (evolution of SiC MOSFETs – main open points)
    (under confirmation)
Please note there is separate registration to attend the tutorial. The registration fee is €60 for ECSCRM 2016 participants, and €200 for non-participants. The registration fee for students* is €60, regardless of ECSCRM 2016 registration. The fee covers lectures, tutorial materials, as well as lunch and coffee breaks on tutorial day.

The organizing committee of ECSCRM 2016 Tutorial Day
  • Matthias Bucher (Technical University of Crete, TUC, Greece)
  • Peter Friedrichs (Infineon, Germany)
  • Konstantin Vasilevskiy (Newcastle University, UK)
  • Konstantinos Zekentes (FORTH, Greece)
* Student status will be recognized only to PhD and Master students. Post-docs are kindly requested to register as regular participants. Students must provide evidence of their status by sending a student certificate or a copy of a valid student ID to the conference secretariat upon registration.

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