Monday, 9 January 2012

C4P: 2012 IEEE Silicon Nanoelectronics Workshop

Hilton Hawaiian Village in Honolulu, Hawaii (June 10-11, 2012)
Sponsored by the IEEE Electron Device Society
Authors are encouraged to submit a full-length paper to the IEEE Transactions on Nanotechnology or the IEEE Transactions on Electron Devices. Download the Call for Papers (PDF format) Further Information The 2012 Silicon Nanoelectronics Workshop is a satellite workshop of the 2012 VLSI Symposia sponsored by the IEEE Electron Device Society. It will be held on June 10-11, 2012 at the Hilton Hawaiian Village in Honolulu, Hawaii USA. This will be the seventeenth workshop in the annual series. Original papers on nanometer-scale devices and technologies which utilize silicon or which are based on silicon substrates are welcome. Prospective authors are requested to submit an abstract in PDF format, consisting of one page of text and one page of figures. It must include the paper title, the authors’ names and affiliation(s), and the full contact information (mailing address, phone and FAX numbers, e-mail address) for the corresponding author. Accepted abstracts will be reproduced in the workshop proceedings exactly as received. Some of the accepted papers will be presented in Poster Sessions. The deadline for receipt of abstracts is 5PM (Pacific Time) April 1, 2012. Authors will be notified by April 30, 2012.
Registration forms and hotel reservation forms will be provided in the Advanced Program of the 2012 VLSI Technology Symposium (http://www.vlsisymposium.org/index.html).
Scope:
•Sub-10 nm transistors, including those employing non-classical structures, novel channel and source/drain materials, or non-thermal injection mechanisms
•Junction and insulator materials and process technology for nanoelectronic devices
•Techniques for fabrication of nanostructures, including nanometer-scale patterning
•Physics of nanoelectronic devices, e.g. quantum effects, non-equilibrium transport
•Modeling/simulation of nanoelectronic devices, e.g. including atomistic effects
•Nanoscale surface, interface, and heterojunction effects in devices
•Device scaling issues including doping fluctuations and atomic granularity
•Circuit design issues and novel circuit architectures, including quantum computing, for nanoelectronic devices
•Optoelectronics using silicon nanostructures
•Techniques targeting zero power electronics (self-supplying), including wireless sensors, energy harvesting, steep slope devices, ultra-low power design and devices
•Devices for heterogeneous integration on silicon, including Graphene, III-V devices, CNT, spin-based devices, MEMs and NEMS, etc.
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