Friday, 23 September 2011

[Internship] Modeling of GaN Power Transistors for IC Design

Internship framework: At the heart of the MINATEC innovation campus, Leti institute is one of the most important R&D laboratories in Europe in the field of microelectronics and nanotechnologies. Within the Alternative Energies and Atomic Energy Commission, CEA-Leti is developing GaN-based technologies and power devices for energy conversion in different industrial fields (energy management, automotive electronics, electric car). In order to design and simulate integrated circuits, it is mandatory to develop electro-thermal models of power transistors.  
Work description: The aim of the internship is to develop a specific model for GaN-based high electron mobility transistors (HEMTs). This wide bandgap semiconductor is one of the most promising for power electronics and is currently the subject of extensive research. This internship will take place in the Simulation and Modeling laboratory (LSM) of the Silicon Components Division (DCOS).  
This internship is divided into four parts:
  1. Understanding of physical phenomena (electrical, thermal) in power HEMT transistors and analysis of existing models
  2. TCAD numerical simulations of devices. 
  3. Compact modeling of transistors starting from previous studies on silicon carbide (SiC) transistors. 
  4. Depending on availability, static and pulsed measurements on GaN transistors and extraction of model parameters.  
Host Institution
Direction/D├ępartement/Service/Laboratoire CEA-LETI – DRT/DCOS/SCME/LSM
Postal address
17 rue des Martyrs 38054 Grenoble CEDEX 9

Technical Supervisor 
Patrick MARTIN
Phone: 04 38 78 67 05

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