Friday, 25 February 2011

Microelectronics Journal, in-press, february 2011

Modeling of threshold voltage of a quadruple gate transistor

Md. Gaffar, Sayed Ashraf Mamuna, and Md. Abdul Matina

Available online 24 February 2011.
Abstract

In this paper, a three dimensional analytical solution of electrostatic potential is presented for undoped (or lightly doped) quadruple gate MOSFET by solving 3-D Poisson's equation. It is shown that the threshold voltage predicted by the analytical solution is in close agreement with TCAD 3-D numerical simulation results. Numerical simulation, self-consistent Schrodinger–Poisson equations, calibrated by 2D non equilibrium green function simulation, are used.

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