Thursday, 21 January 2010

Some papers

I've seen five interesting papers in the current issue of the International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Volume 23, Issue 2, 2010.):
 
Pages: 88-106
Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation
Joaquín Alvarado, Benjamin Iñiguez, Magali Estrada, Denis Flandre, Antonio Cerdeira
http://www3.interscience.wiley.com/journal/122527099/abstract

Published Online: 30 Jul 2009
DOI: 10.1002/jnm.725

Pages: 107-126
New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors
J. C. Tinoco, J.-P. Raskin
http://www3.interscience.wiley.com/journal/122581374/abstract

Published Online:  1 Sep 2009
DOI: 10.1002/jnm.726

Pages: 127-139
Modelling CoolMOSC3 transistor characteristics in SPICE
Krzysztof Górecki, Janusz Zar?bski
http://www3.interscience.wiley.com/journal/122580694/abstract

Published Online:  1 Sep 2009
DOI: 10.1002/jnm.727

Pages: 140-150
The compact d.c. electrothermal model of power MOSFETs for SPICE
Janusz Zar?bski
http://www3.interscience.wiley.com/journal/122582111/abstract

Published Online:  1 Sep 2009
DOI: 10.1002/jnm.728

Pages: 151-163
Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models
Seyed Majid Homayouni, Dominique Schreurs, Bart Nauwelaers
http://www3.interscience.wiley.com/journal/123242581/abstract

Published Online: 15 Jan 2010
DOI: 10.1002/jnm.740

1 comment:

wladek@mos-ak.org said...

FYI: selected are MOS-AK recommendations