November 2007 issue of IEEE Transactions on Circuits and Systems, Part-I

This issue will be a special issue on circuits and computing architectures in the emerging area of Nanotechnology. Among other, I've found some papers that I think are worth a look:

Title: Modeling of the Electrical Conductivity of DNA
Authors: Vedrana Hodzic, Vildana Hodzic, Robert W. Newcomb

As they say in the abstract: "We have developed a PSpice model of the electrical behavior of DNA molecules for use in nanoelectronic circuit design. To describe the relationship between the current through DNA and the applied voltage we used published results of the direct measurements of electrical conduction through DNA molecules. The experimental dc current-voltage (I-V) curves show a nonlinear conduction mechanism as well as the existence of a temperature dependent semiconductive voltage gap. A weighted least-squares polynomial fit to the experimental data at one temperature, with fitted temperature dependent polynomial coefficient of the linear term, was used as a mathematical model of electrical behavior of DNA. An equivalent electrical circuit was created in PSpice in which DNA was modeled as a voltage-controlled current source described by the mathematical model that includes temperature dependence, GPOLY(T) . Using this model, PSpice simulations with this model generated current-voltage-curves at other temperatures that were in excellent agreement with experimental data"

Title: CNTFET Modeling and Reconfigurable Logic Circuit Design
Authors: Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sebastien Frégonèse, Thomas Zimmer, Lorena Anghel, Trinh Dang, Régis Leveugle

This paper examines aspects of design technology required to explore advanced logic circuit design using CNTFET devices. An overview of current types of CNTFETs is given and highlights the salient characteristics of each. Compact modeling issues are addressed and new models are proposed implementing (i) a physics-based calculation of energy conduction sub-band minima to allow a realistic analysis of the impact of CNT helicity and radius on the dc characteristics and (ii) descriptions of ambipolar behavior in Schottky-Barrier CNTFETs and ambivalence in double-gate CNTFETs. Using the available models, the influence of the parameters on the device characteristics were simulated and analyzed. The exploitation of properties specific to CNTFETs to build functions inaccessible to MOSFETs is also described, particularly with respect to the use of double-gate CNTFETs in fine-grain reconfigurable logic.