Wednesday, 14 February 2007
Another paper: Arbitrary Density of States in an Organic Thin-Film Field-Effect Transistor Model and Application to Pentacene Devices. After reading it, I've been left with the feeling that they have done a lot of very good work, but that the results are somehow quite similar to those that one can obtain with the old good RPI model. Probably it is my fault, but it seems too much work to end up with a gds that is not accurate, and with a fitting comparable to RPI. However, I repeat, the work is quite good and the problems I mention are mainly due to problems with the parameter extraction.