[C4P] MIXDES 2026

CALL FOR PAPERS

33rd International Conference

MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS

MIXDES 2026

25 - 27 June 2026, Poznań, Poland

MIXDES Areas of Interest include:
1. Design of Integrated Circuits and Microsystems

Design methodologies. Digital and analog synthesis. Hardwaresoftware codesign. Reconfigurable hardware. Hardware description languages. Intellectual property-based design. Design reuse.

2. Thermal Issues in Microelectronics

Thermal and electro-thermal modelling, simulation methods and tools. Thermal mapping. Thermal protection circuits.

3. Analysis and Modelling of ICs and Microsystems

Simulation methods and algorithms. Behavioural modelling with VHDL-AMS and other advanced modelling languages. Microsystems modelling. Model reduction. Parameter identification.

4. Microelectronics Technology and Packaging

New microelectronic technologies. Packaging. Sensors and actuators.

5. Testing and Reliability

Design for testability and manufacturability. Measurement instruments and techniques.

6. Power Electronics

Design, manufacturing and simulation of power semiconductor devices. Hybrid and monolithic Smart Power circuits. Power integration.

7. Signal Processing

Digital and analogue filters, telecommunication circuits. Neural networks. Fuzzy logic. Low voltage and low power solutions.

8. Embedded Systems

Design, verification and applications.

9. Medical Applications

Medical and biotechnology applications. Biometrics. Thermography in medicine.10. Artificial Intelligence in Electronic SystemsAI-driven design. AI-driven signal and data processing. Edge AI.

Tutorials and Special Sessions Call for Proposals

Several tutorials/special sessions will be held prior to the conference. Authors willing to propose a tutorial at MIXDES 2026 are invited to send a proposal to the Organizing Committee. The proposal should consist of a three-page summary including tutorial title, name and affiliation of the lecturer(s), tutorial objectives and audience, topical outline and provisional schedule of the tutorial.

Enquiries:
Mariusz Orlikowski (Conference Secretary) e-mail: mixdes2026@dmcs.p.lodz.pl

Lodz University of Technology
Department of Microelectronics and Computer Science (K-22)
ul. Wólczańska 221 (building B18)

93-005 Łódź, Poland

tel.: +48 604397239
fax: +48 426360327

[chapter] Compact/SPICE Modeling

Wladek Grabinski and Daniel Tomaszewski

Compact/SPICE Modeling

In: Rudan, M., Brunetti, R., Reggiani, S. (eds) 

Springer Handbook of Semiconductor Devices

DOI 10.1007/978-3-030-79827-7_34

Abstract: The microelectronics and nano-electronics industry strongly relies on compact models to reduce a new microelectronic product development costs. The goals of this review are to highlight critical issues for the development of compact models for microelectronics and nano-electronics. In this chapter, we’ve covered the main principles of the compact device modeling. Also discussed are the possibilities of integrating compact models into circuit simulation and design tools, with an emphasis on the Verilog-A standardization, which simplify model implementation into EDA tool.

 

[paper] dual metal InAs-GaSb VTFETs

M. Saravanan, Eswaran Parthasarathy, Shiromani Balmukund Rahi and Ramkumar Natarajan

Impact of drain and source engineering on dual metal InAs-GaSb VTFETs
with high-K gate stack design

Sci Rep 15, 44796 (2025) DOI: 10.1038/s41598-025-28448-x

Department of Electronics and Communication Engineering, Sri Eshwar College of Engineering, Coimbatore, 641202, India
Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Kattankulathur, 603203, India
University School of Information and Communication Technology, Gautam Buddha University, Greater Noida, 201312, Uttar Pradesh, India
Department of Electronics and Communication Engineering, SR University, Warangal, 506371, Telangana, India

Abstract: The performance of a Dual-Metal-InAs-GaSb Vertical Tunnel Field Effect Transistor (DM-InAs-GaSb VTFET) with an InAs source pocket was investigated in relation to the gate dielectric materials. This research chose gate dielectric materials such as SiO2, Al2O3, HfO2, and ZrO2. The simulation is performed using the Silvaco Technology Computer-Aided Design (TCAD) software. The drain current (ION) of the DM-InAs-GaSb VTFET, which includes an InAs source pocket and an extended drain, is assessed across several dielectric materials; still, ZrO2 (7.92 × 10− 5 A/µm) and HfO2 (8.15 × 10− 5 A/µm) demonstrate enhanced performance. The transconductance (gm) values were 606 µS/µm for HfO2 and 589 µS/µm for ZrO2. A comparison is performed between the Ge-Si VTFET and the suggested configuration. The proposed DM-InAs-GaSb VTFET demonstrates a 1.5-times increase in ON current (ION) and a three-time boost in transconductance (gm). The frequency response of the proposed device was evaluated by employing its SPICE characteristics to construct the common source amplifier in the SPICE circuit simulator. This amplifier comparison reveals that ZrO2 and HfO2 insulators provide significant gain, with HfO2 displaying a cut-off frequency of 1.808 GHz.

FIG: Cross-sectional schematic (a) DM-InAs-GaSb VTFET with split drain (Device-A),
(b) DM-InAs-GaSb VTFET with reduced channel (Device-B),
(c) DM-InAs-GaSb VTFET with drain extension (Device-C).

Acknowledgements: The authors acknowledge the SRM Institute of Science and Technology, Kattankulathur, Chennai, India for providing the support and facility to carry out this research work.

ISHI-kai OpenMPW

ISHI-kai (Inter-linked Society on Homemade IC Kai)

https://ishikai.connpass.com/event/382637/

The name was conceived from a society community (association) that deals with open (democratized) silicon semiconductor (ASIC/LSI/IC) and connects various R&D fields.

OpenMPW (Open Multi Project Wafer), which appeared as a pioneer of this, is a shuttle program born with Google's investment in Efabless, and is open and free of charge for semiconductors (ASIC/LSI/ICs), including the tools necessary for making semiconductors (ASIC/LSI/IC) to ISHI manufacturing in the fab. IC). This is exactly the "openness of semiconductors (ASIC/LSI/IC) and EDA/PDK" of the open source movement (democratization of software) that started with GNU! [read more...]

Time	Title	Speakers	Contents
20:00 - 20:30	End-to-end open-source Digital IC Design Participation Report	@jun1okamura/OpenSUSI	-
20:30 - 21:00	Various event reports such as academic conferences	@nishizawa#2174	-
21:00 - 21:30	I thought about the application of self-made LSIs that are no longer a niche	Yuuki Umeta/Newcomer	Although the base of self-made LSIs is expanding, there are still aspects that are established by public subsidies and donations from major companies. Therefore, it cannot be said that there is an established business model (with long-term financial sustainability). I thought it would be a hint for many people, so I thought about how to apply it like brainstorming.
21:30 - 22:00	The Game Participation Experience Report	@reodon	-
22:00 - 22:30	About the AX1001 SoC for SWEST27 Robots & IoT Edge	Susumu Yamazaki/SWEST27 Executive Committee & Associate Professor, Kitakyushu City University	This is a lecture given by Mr. Takeoka of Axe Co., Ltd. in SWEST27. The AX1001, a proprietary SoC developed for robots and IoT edges, is equipped with the ROS2rapper IP, which is a completely hardware-based ROS2 communication unit. At the same time, it is also equipped with a "Shochiku V" CPU that is an independent expansion of RISC-V. Shochiku V has multi-threaded control and semaphore by hardware, and realizes RTOS-equivalent functions only with hardware. Shochiku V also has an 8-bit floating-point vector arithmetic mechanism for ML and a Lisp/Prolog acceleration instruction.
22:30 - 23:00	Launch report of the ISHI Kai's GPS system on the Kagoshima rocket	@noritsuna	We will have the GPS system for rockets being created by the ISHI Association installed on the Kagoshima rocket and participate in the launch experiment. Therefore, we will report on the GPS system and the work of the rocket until the launch and the launch itself.
23:00 -	Chat Corner	Everyone	-

ToM2026 – XX Year

Topics on Microelectronics

(ToM2026) – XX Year

Università degli Studi di Milano-Bicocca

Italian National Ph.D. Program in Micro- and Nano-Electronics

Updated information: www.mbtechnoservices.com

Directors: Andrea Baschirotto & Piero Malcovati

On the occasion of the twentieth anniversary of the “Topics on Microelectronics” Courses and in consideration of the collaboration with the National Ph.D. Program in Micro- and Nano-Electronics, the Chips-IT Foundation, and IEEE-SSCS Italy, this year the first course will be held in Torre dell'Orso, Puglia, in a setting designed to bring together instructors and participants in an environment of outstanding natural beauty. The second course will be held at the more familiar venue of the University of Milan-Bicocca.

For both courses, the format remains consistent, comprising 15 lessons of 3 hours each, delivered by recognized experts in the field of Microelectronics from both academia and research, as well as from industry. Additionally, the courses are characterized by a strong multidisciplinary approach, due to the dense nature of the covered topics. This choice is motivated by the goal of providing an increasingly broad-based preparation for Ph.D. students.

Finally, it is an honor to complement the first ToM course of the twentieth year with a lecture by Professor Pieter Harpe, who serves as a Distinguished Lecturer for IEEE-SSCS, as part of the activities of the SSCS Italian Chapter.

IEEE-SSCS Distinguished Lecture Program

Monday, June 8, 2026 – 09:00–12:00 P. Harpe (Eindhoven University of Technology)
“ADC Innovations for Improved Resolution, Power and Form Factor”
“Ultra low power SAR ADCs and versatile, dynamic sensor interfaces”

ToM2026/1 – Course Program (June 8–10, 2026)

Venue: Hotel Belvedere, Torre dell'Orso – Melendugno (LE), Italy

Monday, June 8, 2026

16:00–19:00 D. M. Mattes (University of Milan-Bicocca, Italy)
“Analog Design in 7nm-CMOS-FinFET”

Tuesday, June 9, 2026

09:00–12:00 G. Frattini (Analog Devices, Italy)
“What does it take to build a System-In-Package with HV galvanic isolation”

16:00–19:00 C. Forzan (STMicroelectronics, Italy)
“Digital Design Flow: a Journey from Synthesis to Signoff”

Wednesday, June 10, 2026

09:00–12:00 L. Pilotto (ChipsIT Foundation, Italy)
“Introduction to Sub-THz Circuit Design”

16:00–19:00 P. Malcovati (University of Pavia, Italy)
“MEMS and Integrated Microsystems: From Fabrication to Interface Circuits”

ToM2026/2 – Course Program (October 12–14, 2026)

Venue: University of Milan-Bicocca, Italy

Monday, October 12, 2026

14:00–17:00 Q. Li (TU Hamburg, Germany)
“High-Resolution SAR ADC with closed loop time-domain comparison”

Tuesday, October 13, 2026

09:00–12:30 E. Sacchi (Cadence, Italy)
“Electromagnetics in RFICs and RF systems design”

14:00–17:30 M. Demicheli (ChipsIT Foundation, Italy)
“DC-DC conversion techniques”

Wednesday, October 14, 2026

09:00–12:30 M. Sampietro (Polytechnic of Milan, Italy)
“Fighting against electronic noise: how to reach attoAmpere signal detection”

14:00–17:30 M. Chiabrera (Inventvm, Italy)
“Technique and challenges in low latency – low power audio digital design”

Further information and on-line registration 

are available at www.mbtechnoservices.com