[https://t.co/4cRTlKFKn6] #TSMC founder doubts #US competence in #chip-making https://t.co/HWpPWUnjmy #semi pic.twitter.com/GttqosRZW6
— Wladek Grabinski (@wladek60) May 31, 2021
Principles, Applications, And The Future Of #Piezoelectric #MEMS https://t.co/1tVZd6d9xI#semi pic.twitter.com/vgcNu4WGpt
— Wladek Grabinski (@wladek60) May 26, 2021
Global #200mm #Fab Capacity on Pace to Record Growth to Meet Surging Demand and Address #Chip Shortage [SEMI Reports] https://t.co/U6URwtE98e #semi pic.twitter.com/auVdEwdRh3
— Wladek Grabinski (@wladek60) May 25, 2021
#US #chip stimulus could unlock $150 billion, create 10 #fabs [May 25, 2021 // By Peter Clarke] https://t.co/xqP16Mel2Z #semi pic.twitter.com/KbfISHIH0W
— Wladek Grabinski (@wladek60) May 25, 2021
[1] N. Chatterjee, J. Ortega, I. Meric, P. Xiao and I. Tsameret, "Machine Learning On Transistor Aging Data: Test Time Reduction and Modeling for Novel Devices," 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, pp. 1-9, doi: 10.1109/IRPS46558.2021.9405188.
Abstract: Accurately modeling the I-V characteristics and current degradation for transistors is central to predicting circuit end-of-life behavior. In this work, we propose a machine learning model to accurately model current degradation at various stress conditions and extend that to make nominal use-bias predictions. The model can be extended to track and predict any parametric change. We show an excellent agreement of the model with experimental results. Furthermore, we use a deep neural network to model the I-V characteristics of aged transistors over a wide drain and gate playback bias range and show an excellent agreement with experimental results. We show that the model is reliably able to interpolate and extrapolate demonstrating that it learns the underlying functional form of the data.
URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9405188&isnumber=9405088
[2] P. B. Vyas et al., "Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection," 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, pp. 1-4, doi: 10.1109/IRPS46558.2021.9405197.
Abstract: Accurate prediction of device aging plays a vital role in the circuit design of advanced-node CMOS technologies. In particular, hot-carrier induced aging is so complicated that its modeling is often significantly simplified, with focus limited to digital circuits. We present here a novel reliability-aware compact modeling method that can accurately capture the full post-stress I-V characteristics of the MOSFET, taking into account the impact of drain depletion region on induced defects.
URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9405197&isnumber=9405088
[3] Z. Wu et al., "Physics-based device aging modelling framework for accurate circuit reliability assessment," 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, pp. 1-6, doi: 10.1109/IRPS46558.2021.9405106.
Abstract: An analytical device aging modelling framework, ranging from microscopic degradation physics up to the aged I-V characteristics, is demonstrated. We first expand our reliability oriented I-V compact model, now including temperature and body-bias effects; second, we propose an analytical solution for channel carrier profiling which-compared to our previous work-circumvents the need of TCAD aid; third, through Poisson's equation, we convert the extracted carrier density profile into channel lateral and oxide electric fields; fourth, we represent the device as an equivalent ballistic MOSFETs chain to enable channel “slicing” and propagate local degradation into the aged I-V characteristics, without requiring computationally-intensive self-consistent calculations. The local degradation in each channel “slice” is calculated with physics-based reliability models (2-state NMP, SVE/MVE). The demonstrated aging modelling framework is verified against TCAD and validated across a broad range of VG/VD/T stress conditions in a scaled finFET technology.
URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9405106&isnumber=9405088
SIA/Oxford Economics Report:
— Wladek Grabinski (@wladek60) May 21, 2021
Robust federal incentives for domestic chip manufacturing would create an average of nearly 200,000 American jobs annually as fabs are built and add nearly $25 billion annually to U.S. economyhttps://t.co/Ahvt2ozLO8#semi pic.twitter.com/DeJ7cdJu98
DIY chip for $10k
— Wladek Grabinski (@wladek60) May 21, 2021
Efabless, a community chip creation platform, today announced the launch of its new chipIgnite program to bring #chip #design and #fabrication to the masses.https://t.co/rmaDoHNaJZ #semi pic.twitter.com/VnbxVThEf2
[Program] SICT2021 aims to bridge the gap between research in the Information and Communications Technology (ICT) and the overarching and inter-related social, environmental, and economic questions of our time https://t.co/fyMzfIun8Z #semi pic.twitter.com/gtU7xulUHt
— Wladek Grabinski (@wladek60) May 21, 2021
#TSMC trumps #IBM’s “#2nm” chip tech hyperbole with “#1nm” claimhttps://t.co/xWTVO8ygW6#semi pic.twitter.com/EUetFKHidw
— Wladek Grabinski (@wladek60) May 19, 2021
Abstract: Recent advances in CMOS scaling have made circuits more and more sensitive to errors and dysfunction caused by ionizing radiation, even at ground level, requiring accurate modeling of such effects. Besides generation, transport, and collection of radiation-induced excess carriers, another phenomenon, called funneling, has to be modeled for an accurate prediction of soft errors. The funneling effect occurs when the radiation track crosses a space charge region and generates excess carriers with a density higher than the doping close to it. These carriers distort the electric field of the space charge region, deeply changing the transport mechanism, from diffusion in a field-free semiconductor to drift. The objective of this work is to include funneling as part of the generalized lumped devices model in order to obtain a complete tool for SPICE-compatible simulations of single-event effects (SEEs). The latter approach has been recently proposed to simulate radiation-induced charges in the silicon substrate and is based on the so-called generalized lumped devices that simulate charge generation, propagation, and collection using standard circuit simulators. The generalized devices are here extended to include funneling and used to simulate an alpha particle impinging on the bulk of nMOS and pMOS transistors. The results obtained are validated with TCAD numerical simulations. Finally, a static random-access memory (SRAM) struck by an alpha particle is analyzed. The model predicts that the occurrence of a soft error, i.e., flipping of memory state, may depend on whether or not there is funneling. This justifies the need for accurate modeling of funneling phenomena to predict SEEs in ICs.
FIG: Generalized devices network obtained for the pMOS substrate. The mesh is drawn in gray dashed lines. The network is not shown around the radiation track; only the mesh is reported, which is denser to linearize the generation profile and excess carrier gradients.
Aknowlwdgement: This work was supported by the Swiss National Science Foundation (NSF) under Grant 200021_165773.
Engineers Have Developed the World’s First Fully #Recyclable #Printed #Electronics (Pic: 3D rendering of the first fully recyclable, printed transistor. Credit: Duke University) https://t.co/QXgJbMfDOe #semi pic.twitter.com/tOOK3lwlHo
— Wladek Grabinski (@wladek60) May 18, 2021
South #Korea plans US$450 #billion #semiconductor spend https://t.co/VZlr2nmDI8#semi pic.twitter.com/esg0nOljwu
— Wladek Grabinski (@wladek60) May 17, 2021
Topic: "eSim: An open source CAD software for circuit simulation"
Presenter: Prof. Kannan Moudgalya
Read: Biography
Date: 26 May 2021
Time: 11:00 AM EST (Convert to your time zone)
Abstract: Free and Open Source Software for Education (FOSSEE) (https://fossee.in) is a project initiated by the Ministry of Education at IIT Bombay. It promotes many open source software systems, such as Scilab, Python, R, OpenModelica, OpenFOAM and DWSIM. It also promotes open source hardware projects, such as Arduino, and OpenPLC. By combining KiCAD and Ngspice, FOSSEE has developed an open source circuit simulation software eSim (https://esim.fossee.in). By incorporating GHDL, eSim has been made capable of carrying out mixed signal simulation. This capability has been extended to simulate circuits with microcontrollers, with every instruction being implemented through a function written in C. Finally, the FOSSEE team is in the process of creating a cloud version of eSim. FOSSEE carries out several activities to promote circuit simulation through eSim. It has trained about 10,000 students (4,000 women and 6,000 men) and 5,000 faculty members (2,000 women and 3,000 men) on the use of eSim. FOSSEE helps colleges migrate their labs from proprietary software to eSim. More than 200 electronic circuits have been coded in eSim by students across India, and these are released as open educational resources. The FOSSEE team has also created automatic converters to migrate PSpice and LTSpice schematics to KiCAD, and hence, eSim. More than 100 such coverted circuits are released as open educational resources. These resources are available to everyone anywhere in the world. The talk will begin with an introduction to Spoken Tutorials (https://spoken-tutorial.org) the methodology developed by the speaker for large scale training on IT topics.
All participants will receive WebEx details prior to the event. We sincerely hope that you can join us for this special event. Register Now!
[paper] Zhang, J., Gao, F. & Hu, P. A vertical transistor with a sub-1-nm channel. Nat Electron (2021). https://t.co/2t2XVrNaCX
— Wladek Grabinski (@wladek60) May 14, 2021
https://t.co/obG6j5iX0y#semi pic.twitter.com/IikSG1DJrk
DevIC 2021
Due to rapid increase in COVID affected people, request to Kindly join our hands and support us by donating to West Bengal State Emergency relief Fund
DevIC 2021 Conference Committee
Professor Mansun Chan, HKUST, has started a series of video lecture on Circuit Simulation and Device Modeling in his youtube channel https://www.youtube.com/channel/UCQKeknQioXvHk1wZZB-dliw/playlists He has finished about half and will continue to upload material in the rate of one video/month. Please feel free to share if whenever you think is appropriate. If you have any comments, please let Prof.Chan know.
This is the best time to evaluate the Unmatched family of Innovative Atomistic TNL TCAD simulators. You may freely download the software from below link:
http://www.technextlab.com/login.php
Register yourselves and download the TNL setup. Tech Next Lab will provide you 1- months licenses for all simulators free of cost along with technical support.
We are pleased to introduce in-house developed Unmatched family of Innovative Atomistic TNL TCAD simulators, including EpiGrow (Epitaxial Growth), FullBand (Material Characterization), HallMobility (Material Characterization), THz Spectroscopy (Material Characterization), and Monte Carlo Particle Device simulators (MCPDS).
All products are proprietary products of Tech Next Lab (P) Ltd. We provide instant technical and sales solution for the queries and feedback come from the customers. You may find more details about TNL TCAD tools on our website: www.technextlab.com
We may assure you that our simulators will surely help in expediting the most of semiconductor Technologies Developments and also benefits your students from teaching prospective. Few Publications:
For MOCVD epitaxial growth you may find more details:
https://www.sciencedirect.com/science/article/abs/pii/S0925838819329858
For GaN based technology for FET device applications:
https://link.springer.com/chapter/10.1007/978-981-15-5262-5_61
For Group-III nitrides and its alloys:
https://www.nature.com/articles/s41598-020-75588-3
Group II-VI Material Characterization:
https://link.springer.com/article/10.1007/s11664-021-08756-4
.
For Detector Application:
https://publications.drdo.gov.in/ojs/index.php/dsj/article/view/11177
https://link.springer.com/article/10.1007/s11082-020-02488-1
Feel free to write <info@technextlab.com> in case you have any query.
Looking forward to hear from you ASAP.
Best Regards,
Praveen
Atomistic TNL TCAD simulators:
TNL Framework: TNL Framework includes family of innovative simulators based on atomistic level. It provides innovative technology solution to semiconductor industry. The technology development is expensive process and suffers with lot of technical challenges & issues. TNL framework is designed to innovate the semiconductor device designing. It accommodate atomistic based thin film growth simulator, full band simulator, material characterization simulator and Monte Carlo particle device simulator.
EpiGrow Simulator: EpiGrow simulator is world's first commercial innovative atomistic epitaxial growth simulator to grow thin film inside MBE/MOCVD reactors. EpiGrow simulator is powerful tool to trace atomistic thin and thick film growth inside reactors. Kinetic Monte Carlo algorithms keeps Randomness in adsorption, hopping & desorption processes. It offer cost economical solution for thin film growth technology even for nm thin monolayer. Capable to predict the initial conditions for Molecular Beam Epitaxy & Molecular Organic Chemical Vapor Deposition (MOCVD) reactors. Capable to calculate the lattice constant of monolayer, trace different types of defects, and strain. Optimizer provides flexibility to optimize initial conditions with EpiGrow Simulator and run design of experiments over the computer.
TNL-FB Simulator: Full Band Simulator is powerful tool, extends the empirical pseudopotential method to include semiconductors with the zincblende as well as wurtzite structures and simulates electronic band structures with appropriate pseudopotential form factors chosen from the reported reputed references for binary alloy semiconductor materials and interpolate the pseudopotential form factors for ternary alloy semiconductor materials to simulate the full electronic band structures of ternary materials. The bowing of band energies and their deformation potentials is included inside simulator in form of alloy disorder. Capable to simulate the full electronic band structures for the lattice constant of monolayer provided by users. Different types of physical parameters e.g. carrier velocity, effective mass and density of states can be easily tracable on the full electronic band structures of the chosen materials. Provides flexibility to users to chose lattice constant and analyse the full electronic band structures over computer.
TNL-EM Simulator: Electron Mobility Simulator is powerful tool, simulates carriers transport on full energy band. The microscopic simulation of the motion of individual particles in the presence of the forces acting on them due to external fields as well as the internal fields of the crystal lattice and other charges in the system. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc. has been inputted through Monte Carlo technique, which randomize the momentum and energy of charge particles in time. Hence, stochastic techniques to model these random scattering events are particularly useful in describing transport in semiconductors, in particular the Monte Carlo method. Provides flexibility to users to initialize the carriers over full energy band and analyze the transport of carrier to simulate the ensemble velocity of carriers under external electromagnetic forces on computer.
TNL-TS (THz Spectroscopy) Simulator is powerful tool to simulates motion of charged and interacting particles. The microscopic simulation of the motion of individual particles under the influence of the THz pulse as well as the internal fields of the crystal lattice and influence of other charges, lattice defects etc. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc., which randomize the momentum and energy of charge particles in time. The stochastic techniques to model these random scattering events are particularly useful in describing inter and intraband transitions of charge carriers in bulk & nonmaterial. The Monte Carlo technique use for solution of Boltzmann transport equation provides flexibility to users to initialize the carriers over many or particular band of the material and analyze the position, momentum, energy & other properties associated with motion of charged particles under influence of THz Pulses, frequencies ranging from few hundred gigahertz to several terahertz. THz Spectroscopy simulator has capabilities to simulate the microscopic conductivity of weakly confined, classical electrons in absence of depolarization effects without need of any approximations of fitting parameters to calibrate the Drude-Smith conductivities..
TNL-PD Simulator: World's Fastest Monte Carlo Particle Device simulator includes transport model solution with a self -consistent Boltzmann-Poisson equation and a GUI based feature helps users to select device geometry and doping density in 2D and 3D. The different carrier scattering mechanisms has major influence on the performance of device output and dependent on the density of states (DOS) in each valley which can be accurately inputted through full band structure. The effect of equilibrium states of carrier before start of free flight of carrier has been incorporated in term of inclusion of depletion region through movement of the ensemble of carriers under influence of external electrostatic field obtained by solving the Poisson equation. The quantum confinement effect includes density gradient approach and effective potential approach for computation of quantum confinement effects on the carrier transport under influence of external forces. Particle Device Simulator (PDS) is exploited for unipolar as well as bipolar semiconductor technologies based devices including MOSFET, Multigate FETS, HEMT and P-N junction devices.
*******************************************
Dr. P. K. Saxena
CEO & CTO,
Tech Next Lab Pvt Ltd (TNL)
Near Nagar Nigam Office Zone-6,
Niwaz Ganj, Lucknow- 226 003 (INDIA)
Phone: (+91) 983 915 1284 / (+91) 9415893655
Fax: 0522 2258921
Email: info@technextlab.com
Web: www.technextlab.com
Skype ID: praveen.itbhu
Linkedin: https://www.linkedin.com/home?trk=nav_responsive_tab_home
********************************************
Quirk is a quantum circuit simulator, great for manipulating and exploring small quantum circuits. Quirk's visual style gives a reasonably intuitive feel of what is happening, state displays update in real time, and is fast and interactive https://t.co/y5Izitamco #semi pic.twitter.com/mLo2ZlSQQb
— Wladek Grabinski (@wladek60) May 10, 2021
1. Theoretical aspects of micro-and nanoelectronic systems (MES).
2. Methods and tools of design automation for micro-and nanoelectronic circuits and systems (VLSI CAD).
3. Experience of development of digital, analog, digital to analog, radio functional blocks of VLSI.
4. Features of VLSI design for nanometer technologies.
5. SoCs for advanced radioelectronic equipment.
6. Exhibition and presentation of commercial products.
1. Circuits and Systems based on nanometer technologies2. Systems on Chip3. Digital VLSI Design4. Design of analog functional blocks and radio VLSI5. Design of mixed-signal VLSI6. Methods of structural synthesis of analog, digital and mixed VLSI and complex functional blocks7. Specialized (resistant to special effects, photosensitivity, etc.) VLSI
1. Methods of simulation of digital, analog and mixed circuits and systems2. Methods for radio VLSI simulation3. Structural, logical, circuit, mixed and layout simulation4. Methods for generating models and macromodels for VLSI CAD5. Device and Technology simulation6. Behavioral simulation
1. Information coding2. Digital data processing3. Use of artificial intelligence methods, neural networks, etc. in micro- and nanoelectronic system designs4. Unconventional arithmetic5. High-performance computers
1. Nanomagnetic storage devices2. Magnetosensor structures
[paper] 1.5-nm Node Surrounding Gate Transistor (SGT)-SRAM Cell with Staggered Pillar and Self-Aligned Process for Gate, Bottom Contact, and Pillar“ will be presented by Yisuo Li at virtual IMW on May 21st, 10:20am // Global TCAD Solutions https://t.co/cr2rvkpXij #semi pic.twitter.com/TSXSO5Db6l
— Wladek Grabinski (@wladek60) May 7, 2021
 |
 |
 |
 |
|
|
|
| |
