Multiple Honors for E3S Theme Leader, Professor Tsu-Jae King Liu

(March 1, 2017) –   The Center for Energy Efficient Electronics Science is proud to announce Prof. Tsu-Jae King Liu has been named a newly elected member of the National Academy of Engineering. Prof. King Liu, who leads the E³S Nanomechanics theme was elected this year as one of only three members from UC Berkeley to this highest professional honor to an engineer. Last year in August, Prof. King Liu has also been chosen to serve on the Board of Directors at Intel Corporation. She was welcomed by Intel Chairman Andy Bryant: “[Prof. King Liu] brings a wealth of expertise in silicon technology and innovation that will be valuable for Intel in many areas as we navigate a significant business transition while continuing to lead in advancing Moore’s Law and harnessing its economic value.”In addition to this distinguished honor by Intel, last year the Semiconductor Research Corporation (SRC) announced Prof. King Liu has been selected to receive the 2016 SRC Aristotle Award. This esteemed award was created by the SRC Board of Directors in March 1995 with the intent "to acknowledge outstanding teaching in its broadest sense, emphasizing student advising and teaching." Heartiest congratulations from the entire E³S community to Prof. King Liu for these prestigious honors!

[paper] Design Strategies for Ultralow Power 10nm FinFETs

Design Strategies for Ultralow Power 10nm FinFETs

Abhijeet Walkea^a, Garrett Schlenvogtb^b, Santosh Kurineca^a

^aDepartment of Electrical & Microelectronic Engineering, RIT, New York, USA

^bTCAD Application Engineer, Silvaco

Received 12 June 2017, Accepted 19 June 2017, Available online 20 June 2017

Abstract: In this work, new design strategies for 10nm node NMOS bulk FinFET transistors are investigated to meet low power (LP) (20pA/μm< I_OFF <50pA/μm) and ultralow power (ULP) (I_OFF <20pA/μm) requirements using three dimensional (3D) TCAD simulations. The punch-through stop implant, source and drain junction placement and gate workfunction are varied in order to study the impact on the OFF-state current (I_OFF), transconductance (g_m), gate capacitance (C_gg) and intrinsic frequency (f_T). It is shown that the gate length of 20nm for the 10nm node FinFET can meet the requirements of LP transistors and ULP transistors by source-drain extension engineering, punch-through stop doping concentration, and choice of gate workfunction.

[read more https://doi.org/10.1016/j.sse.2017.06.012]

Rising SOI tide lifts Soitec into profit

Soitec SA (Bernin, France), developer of the "smart cut" method of silicon-on-insulator (SOI) wafer production, has reported its first profit for many years and is preparing to invest in facilities in France and possibly Singapore to meet rising demand for SOI wafers...

https://shar.es/1BtAZy


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[C4P] IEDM 2017

2017 IEDM CALL FOR PAPERS

The Annual International Electron Devices Meeting will be held at the Hilton San Francisco Union Square San Francisco, CA December 2-6, 2017

Abstract Deadline (four page final paper): August 2nd, 2017

To provide faster dissemination of the conference’s cutting-edge results, the abstract submission deadline has been moved to August 2nd for submission of four-page, camera-ready abstracts. Accepted papers will be published as-is in the proceedings

A Call for Papers flyer is available here: IEDM 2017 Call For Papers.

Customized Call for Papers for each of the technical subcommittee areas are also available:

• Circuit and Device Interaction (CDI)
• Characterization, Reliability, and Yield (CRY)
• Compound Semiconductor and High Speed Devices (CHS)
• Memory Technology (MT)
• Modeling and Simulation (MS)
• Material and interface modeling 
• Compact models
• Kinetic Monte Carlo and Molecular Dynamics
• Reliability and variability modeling
• Technology benchmarking
  New or trending areas include:
• First principle based quantum transport
• Process simulation with atomistic methods
• Self heating, interconnect and packaging
• Nano Device Technology (NDT)
• Optoelectronics, Displays, and Imagers (ODI)
• Power Devices (PD)
• Process and Manufacturing Technology (PMT)
• Sensors, MEMS, and BioMEMS (SMB)

[paper] Well-Posed Device Models for Electrical Circuit Simulation

Well-Posed Device Models for Electrical CircuitSimulation
A Guide to Creating Robust Device Models
A. Gokcen Mahmutoglu, Tianshi Wang, Archit Gupta and Jaijeet Roychowdhury
March 25, 2017

Synopsis: This document provides guidelines for creating computational device models that work well in simulation. We build our discussion around the mathematical notion of “well-posedness”. We show that the requirements for a model to be well-posed stem from the internal working mechanisms of simulators. Therefore, our main aim is to provide insight into the numerical procedures used by simulators in order to help model developers avoid ill-posedness issues. We start our discussion with an example that shows how an ill-posed Verilog-A model can produce different simulation results in different simulators. We then provide a step-by-step simulation case study. In this case study, we illustrate the role of device models in simulations by examining the steps a simulator goes through, from taking a netlist as input to producing a simulation result as output. Finally, we distill our discussion in a functional definition of a well-posed model. As an extension to our theoretical discussion, we also provide practical guidelines that should be followed by Verilog-A models in order to avoid ill-posedness issues [read more...]

This document is published as a part of the Nano-Engineered Electronic Device Simulation (NEEDS) initiative. NEEDS is an NSF-funded initiative whose charter includes the development of tools and techniques for the production of high-quality device models¹:
NEEDS has a vision for a new era of electronics that couples the power of billion-transistor CMOS technology with the new capabilities of emerging nano-devices and a charter to create high-quality models and a complete development environment that enables a community of compact model developers.

NEEDS Team: Purdue, MIT, UC Berkeley, and Stanford.”

¹For more information about NEEDS please visit https://nanohub.org/groups/needs/.

[mos-ak] [Workshop Program] 2nd Sino MOS-AK Workshop in Hangzhou June 29-30, 2017

2nd Sino MOS-AK Workshop
Hangzhou June 29-30, 2017
Workshop Program online http://www.mos-ak.org/hangzhou_2017/

 
Together with the Honorary Committee Chair LingLing Sun, HangZhou Dianzi University and International MOS-AK Board of R&D Advisers: Larry Nagel, Omega Enterprises Consulting (USA), Andrei Vladimirescu, UCB (USA); ISEP (FR) as well as the local coordinator Min Zhang, XMOD (Shanghai) and all the Extended MOS-AK TPC Members, we have pleasure to invite to the 2nd Sino MOS-AK Workshop in Hangzhou on June 29-30, 2017. The MOS-AK workshop is organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to the compact/SPICE modeling and its Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Important Dates:

• 2nd Announcement - April 2017
• Final Workshop Program - June 2017
• 2nd Sino MOS-AK Workshop - June 29-30, 2017
• 1st Day MOS-AK Workshop
• 2nd Day MOS-AK Workshop

Venue:

会议场所：杭州电子科技大学科技馆
Hangzhou Dianzi University; Science & Technology Museum

Final Program of 2nd Sino MOS-AK Workshop is available online
http://www.mos-ak.org/hangzhou_2017/
http://www.xmodtech.cn/Agenda (local link)
Note: 
Above topic and time arrangement sequence could be with tiny variation due to presenter's personal reason
(演讲顺序可能有改变，敬请留意）

Online MOS-AK/Hangzhou Workshop Registration

http://www.xmodtech.cn/registration
(any related inquiries can be sent to register@mos-ak.org)

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special issue of the International Journal of High Speed Electronics and Systems

Extended MOS-AK Committee

WG13062017

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