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Semiconductor Device Characterization Intern Job
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Interacts with other groups such as Design, Process, System, Reliability, and FA. 5+ years of related hands-on industrial experience.... 5+ years of related hands-on industrial design experience. Hands-on experience with device physics, device process, device characterization, and systems.... Possess working knowledge of semiconductor device development processes. Semiconductor Research and Development Process Improvement Engineer, IBM Corporation,... |
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Aug 8, 2013
[mos-ak] [Final Program] 11th MOS-AK ESSDERC ESSCIRC Workshop with the keynote speaker Larry Nagel
Together with Prof. Andrei Vladimirescu, R&D Scientific Coordinator, the Organizing Committee and Extended MOS-AK/GSA TPC Committee, we have pleasure to invite to the 11th consecutive MOS-AK ESSDERC ESSCIRC Workshop on Sept. 20, 2013 in Bucharest (RO). The event will open next decade of enabling compact modeling R&D exchange.
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The final workshop program as well as all further details and updates are on-line: <http://www.mos-ak.org/bucharest/ >
MOS-AK Workshop Program
| 9:00 - 12:00 | Morning Session - Chair: Prof. Andrei Vladimirescu, ISEP (F); UCB (USA) |
| O_1 | Welcome and Workshop Opening W. Grabinski MOS-AK Group (EU) |
| T_2 | SPICE - MOS-AK Keynote Larry Nagel Omega Enterprises Consulting (USA) |
| T_3 | NGSPICE: recent progresses and future plans Paolo Nenzi*, Francesco Lannutti*, Robert Larice**, Holger Vogt**, Dietmar Warning** *DIET - Sapienza University of Roma (I), ** NGSPICE Development Team |
| T_4 | KCL and Linear/NonLinear Separation in NGSPICE Francesco Lannutti DIET - Sapienza University of Roma (I) and NGSPICE Development Team |
| Coffee Break | |
| T_5 | Modeling Junction Less FETs Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut EPFL (CH) |
| T_6 | HiSIM-Compact Modeling Framework Hans Juergen Mattausch Uni. Hiroshima (J) |
| P_7 | The Correct Account of Nonzero Differential Conductance in the Saturation Regime in the MOSFET Compact Model Valentin Turin*, Gennady Zebrev**, Sergey Makarov***, Benjamin Iniguez****, and Michael Shur***** *State University-ESPC (RU),**MEPHI (RU),***SYMICA Inc (RU),****URV (SP),*****RPI (USA) |
| 12:00 -13:00 | Lunch Break |
| 13:00 -16:00 | Afternoon Session - Chair: W. Grabinski, MOS-AK Group |
| T_8 | State of the Art Modeling of Passive CMOS Components Bernd Landgraf Infineon Technologies (A) |
| T_9 | Compact I-V Model of Amorphous Oxide TFTs Benjamin Iniguez*,Alejandra Castro-Carranza* , Muthupandian Cheralathan* , Slobodan Mijalkovic**, Pedro Barquinha***, Elvira Fortunato***, Rodrigo Martins***,Magali Estrada****, and Antonio Cerdeira**** *URV (SP), **Silvaco Ltd (UK), ***UNL(P), ****CINVESTAV (MEX) |
| Coffee Break | |
| T_10 | Three-Dimensional Electro-Thermal Circuit Model of Power Super-Junction MOSFET Aleš Chvála, Daniel Donoval, Juraj Marek, Patrik Príbytný and Marián Molnár Institute of Electronics and Photonics, Slovak University of Technology in Bratislava (SK) |
| T_11 | A Close Comparison of Silicon and Silicon Carbide Double Gate JFETs Matthias Bucher, Rupendra Sharma Technical University of Crete, Chania, (GR) |
| T_12 | Towards wide-frequency substrate model of advanced FDSOI MOSFET Sergej Makovejev, Valeriya Kilchytska, Jean-Pierre Raskin, Denis Flandre UCL (B) |
| 16:00 | End of the MOS-AK Workshop |
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