#GPU-Powered #SPICE: The Way Forward for #Analog #Simulation https://t.co/rfXIvQ6zS9 #paper https://t.co/M5CoIG3rIt

#GPU-Powered #SPICE: The Way Forward for #Analog #Simulation https://t.co/rfXIvQ6zS9 #paper pic.twitter.com/M5CoIG3rIt

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September 30, 2019 at 05:14PM
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The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). https://t.co/iY2ZkKIxYG #paper https://t.co/VsWkm0hlxz

The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). https://t.co/iY2ZkKIxYG #paper pic.twitter.com/VsWkm0hlxz

— Wladek Grabinski (@wladek60) September 3, 2019

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September 03, 2019 at 08:32PM
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Innovative Strategy for Mixer Design Optimization Based on gm/ID Methodology by Giovanni Piccinni, Claudio Talarico, Gianfranco Avitabile and Giuseppe Coviello; Electronics 2019, 8(9), 954; https://t.co/7pjaB0dIt4 https://t.co/1RYwhJfuX9 #paper https://t.co/Y8ftswEgDc

Innovative Strategy for Mixer Design Optimization Based on gm/ID Methodology
by Giovanni Piccinni, Claudio Talarico, Gianfranco Avitabile and Giuseppe Coviello; Electronics 2019, 8(9), 954; https://t.co/7pjaB0dIt4
https://t.co/1RYwhJfuX9 #paper pic.twitter.com/Y8ftswEgDc

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Article reached 1,000 reads

A. Bazigos, M. Bucher, J. Assenmacher, S. Decker, W. Grabinski and Y. Papananos

An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs

IEEE Transactions on Electron Devices,

vol. 58, no. 11, pp. 3751-3758, Nov. 2011.

doi: 10.1109/TED.2011.2164080

Abstract:

The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to inconsistent results and incorrect interpretation of effects, such as drain-induced barrier lowering in advanced CMOS halo-implanted devices. The generalized adjusted CC method is based on the theory of the charge-based MOS transistor model. It introduces an adjusted current criterion, depending on VDS , allowing to coherently determine VTH for the entire range of VDS from linear operation to saturation. The method uses commonly available ID versus VG data with focus on moderate inversion. The method is validated with respect to the ideal surface potential model, and its suitability is demonstrated with technology-computer-aided-design data from a 65nm CMOS technology and measured data from a 90nm CMOS technology. Comparison with other widely used threshold voltage extraction methods is provided.

G. Darbandy et al., "Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors," 26th MIXDES, Rzeszów, Poland, 2019, pp. 76-80. https://t.co/nQs9W9PDJM #paper https://t.co/ROmbZzT1Wi

G. Darbandy et al., "Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors," 26th MIXDES, Rzeszów, Poland, 2019, pp. 76-80. https://t.co/nQs9W9PDJM #paper pic.twitter.com/ROmbZzT1Wi

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September 02, 2019 at 02:45PM
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#IEDM 2019 to Highlight Innovative #Devices for an Era of Connected #Intelligence - Semiwiki https://t.co/TBlZTJtI6g #paper https://t.co/iDwVRos2mw

#IEDM 2019 to Highlight Innovative #Devices for an Era of Connected #Intelligence - Semiwiki https://t.co/TBlZTJtI6g #paper pic.twitter.com/iDwVRos2mw

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