Fujitsu triples output #power of #GaN #HEMTs https://t.co/mx7SeL9xSD #paper

Fujitsu triples output #power of #GaN #HEMTs https://t.co/mx7SeL9xSD #paper

— Wladek Grabinski (@wladek60) August 28, 2018

from Twitter https://twitter.com/wladek60

August 28, 2018 at 05:16PM
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C4P: Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

Call for Papers for a Special Issue 

of IEEE Transactions on Electron Devices

on “Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices”

Submission deadline: March 31, 2019; Publication date: October 2019

Reliability of electronic devices continues to remain as a serious issue for several technology generations. Bias Temperature Instability (BTI) continues to impact CMOS logic devices for High-K Metal Gate (HKMG) technologies, while Hot Carrier Degradation (HCD) and Self Heating Effect (SHE) have evolved as additional issues for FinFETs. The Time Dependent Dielectric Breakdown (TDDB) is still a concern and needs attention. These topics are also of interest for future devices with different channel materials (such as SiGe, Ge or III-V) and architectures (such as Gate All Around Nano Sheet FETs). The mechanisms governing degradation of program/erase window with cycling, data retention before and after cycling, etc. in conventional Vertical NAND and different emerging memories such as Resistive RAM, Phase Change RAM, Magnetic RAM and Ferroelectric RAM are of interest. Different power devices (Si and SiC FETs, IGBTs, GaN HEMTs) are becoming mainstream now and their reliability needs to be accessed. Finally, very little has been studied on the reliability of futuristic 2D channel devices.

This Special Issue of the IEEE Transactions on Electron Devices will feature the most recent developments and the state of the an in the field of device reliability based on both experimental results and theoretical models. Papers must be new and present original material that has not been copyrighted, published or accepted for publications in any other archival publications, that is not currently being considered for publications elsewhere, and that will not be submitted elsewhere while under considerations by the Transactions on Electron Devices.

Topics of interest include, but are not limited to:

• Advanced Transistors: Negative and Positive Bias Temperature Instabilities; Hot Carrier Degradation; SelfHeating Effects; De-convolution of BTI-HCI-SHE; Variability; Random Telegraph Noise; Alternative (SiGe, Ge and III-V) channels; Novel device architectures; etc.;
• Gate Dielectrics: Charge trapping and breakdown including TDDB; Reliability of novel gate dielectrics and materials for logic and memory devices; Evaluation and modeling of progressive breakdown; Gate dielectric reliability on SiGe, Ge and III-V channels; etc.;
• Reliability of Memory Devices: DRAM and NVM including 2D and 3D NAND; Novel memory devices such as Re-RAM, Phase Change RAM, MRAM; etc.;
• Power Devices: MOSFET, HEMT, IGBT on different materials (GaN, SiC, Ga203); etc.;
• RF Devices: High frequency effects; GaN HEMT; RF 801 etc.
• Novel Devices: Negative Capacitance FETs; Ferroelectric memory FETs; Tunnel FETs; Transistors with 2D semiconductors (graphene, M082); Spintronic devices; Neuromorphic devices, etc.;
• Process-Related Reliability: Reliability issues related to different fabrication processes and layout for the above devices.
• Device-Circuit Correlation: Impact of device reliability on circuit operation including any correlation between different effects; development of compact models; circuit simulation; etc.

Submission instructions: Manuscripts should be submitted in a double column format using an IEEE style file. Please visit the following link to download the templates:
http://www.ieee.org/publications_standards/pub1ications/authors/author_templates.html

In your cover letter, please indicate that your submission is for this special issue.

Submission deadline: March 31, 2019 Publication date: October 2019

Guest Editors:

1. Dr. Andreas Kerber, Globalfoundries, USA
2. Dr. Chandra Mouli, Micron Technology Inc., USA
3. Prof. Durga Misra, New Jersey Institute of Technology, USA
4. Prof. Gaudenzio Meneghesso, University of Padova, USA
5. Dr. James Stathis, IBM, USA
6. Prof. Ninoslav D. Stojadinovié, University of Nis, RS
7. Dr. Randy Koval, Intel, SG
8. Prof. Souvik Mahapatra, Indian Institute of Technology, Bombay, IN (Guest EIC)
9. Dr. Stephen Ramey, Intel, USA
10. Prof Tibor Grasser, TU, Wien, A

FOSDEM 2019 Call for Participation

XIX FOSDEM Edition 

Saturday 2nd and Sunday 3rd February 2019 

ULB Campus Solbosch in Brussels.

We now invite proposals for main track presentations, developer rooms, stands and lightning talks. FOSDEM offers open source and free software developers a place to meet, share ideas and collaborate. Renowned for being highly developer oriented, the event brings together some 8000+ geeks from all over the world. We will record and stream all main tracks, devrooms and lightning talks live. The recordings will be published under the same license as all FOSDEM content (CC-BY). If, exceptionally, you believe there is a legitimate reason why your presentation should not be streamed or recorded, you must seek our agreement before submitting it.

Main Tracks
Previous editions have featured main tracks centered around security, operating system development, community building, and many other topics. Presentations are expected to be 50 minutes long (including audience questions) and should cater to a varied technical audience. The conference covers reasonable travel expenses agreed in advance and arranges accommodation for accepted main track speakers if needed.

Proposals for main track presentations should be submitted using Pentabarf: https://fosdem.org/submit. If you already created an account in the system for a previous edition, please reuse it rather than re- registering.

Submissions will be reviewed in two batches, beginning with those received by 13 October. The final deadline is 3 November.

Questions or remarks? Contact us at program@fosdem.org.

Key dates:
13 October: deadline for first batch of main track proposals
3 November: final deadline for main track proposals
1 November onwards: main track talks announced (in batches)

Developer Rooms
Developer rooms are assigned to self-organising groups to work together on open source and free software projects, to discuss topics relevant to a broader subset of the community, etc. Most content should take the form of presentations. Proposals involving collaboration across project or domain boundaries are strongly encouraged.

Developer room proposals should be submitted through the form at
https://fosdem.org/devroom which contains further information.

Questions or remarks? Contact us at devrooms@fosdem.org.

Key dates:
20 September: deadline for developer room proposals
30 September: accepted developer rooms announced
16 October (or earlier): developer rooms issue Calls for Participation
15 December (or earlier): developer rooms publish complete schedules

Stands
FOSDEM offers open source and free software projects the opportunity to display their work during the event. At its stand, a project can share information, demo software, sell merchandise, give away goodies, and so on, and personally interact with the visitors.

What we offer:
- one 180x80cm table, positioned in one of the buildings with developer
  rooms, for the entire duration of the conference. A second table is
  possible in a few cases, but the pressure on space means this is
  becoming increasingly rare and needs strong justification. Joint
  submissions that share a table between related projects will be
  favoured in the selection process.
- two chairs per table
- one power socket type C/E (if you require adapters or additional
  sockets, please bring them yourself)
- fast uplink shared wireless Internet access

To apply, please fill out the form at: https://fosdem.org/stands which
contains further information.

Questions or remarks? Contact us at stands@fosdem.org.

Key dates:
2 November: deadline for stand proposals
11 November: accepted stands announced

Lightning talks
Lighting talks are short — 15 minute long — talks on a wide variety of topics. Anyone who has something interesting to say about an open source or free software topic can apply. We particularly encourage topics that do not fit in any of the developer rooms.

Proposals for lightning talks should be submitted using Pentabarf: https://fosdem.org/submit. Please select "lightning Talks" in the "track" field. If you already created an account in the system for a previous edition, please reuse it rather than re-registering.

Questions or remarks? Contact us at lightningtalks@fosdem.org.

Key dates:
24 November: deadline for lightning talk proposals
15 December: accepted lightning talks announced

All deadlines are at 23.59 UTC.
_______________________________________________
FOSDEM mailing list
FOSDEM@lists.fosdem.org
https://lists.fosdem.org/listinfo/fosdem
_______________________________________________
open-hardware-devroom mailing list
open-hardware-devroom@lists.fosdem.org
https://lists.fosdem.org/listinfo/open-hardware-devroom

Cryogenic MOS Transistor Model https://t.co/yuB4LVzdrZ #paper This paper presents a physics-based analytical model for the MOST operating continuously from room temperature down to 4.2K from depletion to strong inversion and in the linear and saturation regimes.

Cryogenic MOS Transistor Model https://t.co/yuB4LVzdrZ #paper
This paper presents a physics-based analytical model for the MOST operating continuously from room temperature down to 4.2K from depletion to strong inversion and in the linear and saturation regimes.

— Wladek Grabinski (@wladek60) August 21, 2018

from Twitter https://twitter.com/wladek60

August 21, 2018 at 01:48PM
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A Review of #Silicon #Photonics https://t.co/NW3NKTiUXq #paper

A Review of #Silicon #Photonics https://t.co/NW3NKTiUXq #paper

— Wladek Grabinski (@wladek60) August 20, 2018

from Twitter https://twitter.com/wladek60

August 20, 2018 at 10:43PM
via IFTTT