The #efabless $15,000 #Design #Challenge https://t.co/OV5sjnfSxm #papers

The #efabless $15,000 #Design #Challenge https://t.co/OV5sjnfSxm #papers

— Wladek Grabinski (@wladek60) November 30, 2016

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November 30, 2016 at 01:17PM
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Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors #papers https://t.co/IS3MAiWqZY

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors #papers https://t.co/IS3MAiWqZY

— Wladek Grabinski (@wladek60) November 29, 2016

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November 29, 2016 at 02:51PM
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#Opensource #lab-on-a-board costs $29 https://t.co/cJIQPpDgvG #software #feedly #papers

#Opensource #lab-on-a-board costs $29 https://t.co/cJIQPpDgvG #software #feedly #papers

— Wladek Grabinski (@wladek60) November 26, 2016

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November 26, 2016 at 08:25PM
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[paper] RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors

RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors
H. C. Tsai, R. H. Liou and C. Lien
IEEE Transactions on Electron Devices
vol. 63, no. 12, pp. 4603-4609, Dec. 2016

Abstract: Finger-type shallow trench isolation (finger STI) drain extended MOS transistors are fabricated and its electrical characteristics is studied. Polyplate on a finger STI served as a reduced surface field is adopted to enhance breakdown voltage (BV) by reducing the effective doping concentration of the drain extension (DE) finger. The conformal mapping method, which relates the reduction of the doping concentration to the width (z_o) of the DE finger, the gap (z_d) between the polyplate and the DE finger, and the STI depth (y_s), is used to estimate the reduction of the doping concentration theoretically. Based on this reduced doping concentration, a BV model is derived. The predictions of this model agree very well with the experimental data.

Keywords: Conformal mapping, Doping, Electric breakdown, MOS devices, Semiconductor process modeling, Silicon, Transistors, Drain extended MOS (DEMOS), Lateral double Diffused MOS (LDMOS), poly field plate, reduced surface field (RESURF)

doi: 10.1109/TED.2016.2605504
[read more...]

[paper] Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325 GHz

Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325GHz

Marina Deng^a, Thomas Quémerais^b, Simon Bouvot^a, ^b, Daniel Gloria^b, Pascal Chevalier^b

Sylvie Lépilliet^a, François Danneville^a, Gilles Dambrine^a

^aIEMN UMR CNRS 8520, University of Lille, Avenue Poincaré, CS60069, 

59652 Villeneuve-d’Ascq Cedex, France

^bSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France

Highlights

• The SiGe HBT full S-parameters from 250MHz to 325GHz under multiple bias conditions are presented for the first time.
• Standard calibration and de-embedding techniques are used and remained valid up to 325GHz thanks to a reduction of the test structures dimensions.
• A simple and accurate small-signal electrical model was extracted and compared with measurements up to 325GHz.

Received 19 September 2016, Revised 18 November 2016, Accepted 21 November 2016, Available online 22 November 2016 [read more...]

http://dx.doi.org/10.1016/j.sse.2016.11.012