There is a paper on this month issue of
Science from some people of IBM, stating that they have "seen" the dopant distribution in a nano-scale device. The point is, leaving apart the technique, that the dopant does not get an uniform distribution, even after annealing. See the paper:
Imaging of Arsenic Cottrell Atmospheres Around Silicon Defects by Three-Dimensional Atom Probe Tomography, by
Keith Thompson, Philip L. Flaitz, Paul Ronsheim, David J. Larson, and Thomas F. Kelly
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