What TI’s Little Professor Can Teach Us https://t.co/WP22l0RpFe #semi https://t.co/kyZyKyfNF3
— Wladek Grabinski (@wladek60) Mar 31, 2022
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Mar 31, 2022
What TI’s Little Professor Can Teach Us https://t.co/WP22l0RpFe #semi https://t.co/kyZyKyfNF3
from Twitter https://twitter.com/wladek60
March 31, 2022 at 06:26PM
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[https://t.co/W7wbdkjwM3] Study shows how superconductivity can be switched on and off in superconductors https://t.co/7HZsCxZk4V #quantumtechnology, #quantumcomputing #superconductivity #superconductors #nanowires #semi https://t.co/DAOlfz7ghi
[https://t.co/W7wbdkjwM3] Study shows how superconductivity can be switched on and off in superconductors https://t.co/7HZsCxZk4V #quantumtechnology, #quantumcomputing #superconductivity #superconductors #nanowires #semi https://t.co/DAOlfz7ghi
— Wladek Grabinski (@wladek60) Mar 31, 2022
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[paper] Junctionless pH Sensing BioFET
Nawaz Shafi, Aasif Mohamad Bhat, Jaydeep, Singh Parmar, Chitrakant Sahu, C. Periasamy
Effect of geometry and temperature variations on sensitivity and linearity
of junctionless pH sensing FET: An experimental study
Superlattices and Microstructures, p. 107186, Mar. 2022,
doi: 10.1016/j.spmi.2022.107186
* Malaviya National Institute of Technology Jaipur, India
Abstract: Here-in this work, boron doped poly-silicon based dimensional variants of thin film planar junctionless field effect transistors are fabricated through CMOS compatible process for pH detection. The dimensional variants are classified into two sets as set-1 (channel length, L = 100 μm) and set-2 (channel length, L = 120 μm) with widths of 3 μm, 5 μm, 10 μm, and 20 μm. Sensitivity of the fabricated devices is analyzed using phosphate buffer saline solutions of pH 3.1, 5.2, 7, 9 and 11.2 and is computed in terms of relative shift in threshold voltage (VTh) and maximum drain current (IDS). The reference VTh and IDS are taken at neutral pH 7. Here we have experimentally analyzed the effect on pH sensitivity by varying the device widths and temperatures from 30 °C to 50 °C. It is observed that varying the device width from 3 μm to 20 μm, VTh sensitivity reduces from 19.08% to 9.17% and from 16.03% to 8.5% for set-1 and set-2 devices respectively. Increasing temperature from 30 °C to 50 °C causes reduction of VTh sensitivity from 18.68% to 13.52% for device with W/L = 3μm/100 μm and 16.78%–10.99% for device with W/L = 3μm/120 μm. The reduction in width causes average VTh sensitivity to roll-off by 0.49%/μm and 0.26%/μm for L = 100 μm and L = 120 μm respectively. Also the increase in operating temperature from 30 °C to 50 °C leads VTh sensitivity to roll-off by 0.17%/°C and 0.2%/°C for W/L = 3μm/100 μm and W/L = 3μm/120 μm respectively.
Fig: Junctionless pH sensing BioFET
Acknowledgment: This work was supported by Center of Nano Science and Engineering, Indian Institute of Science, Bangalore under Indian Nanoelectronic Users Program. Authors express gratitude to Materials Research Center MNIT-Jaipur for characterization support.
[paper] Power VDMOSFET as X-ray Dosimeter
Goran S. Ristić1, Stefan D. Ilić1,2, Sandra Veljković1, Aleksandar S. Jevtić1, Strahinja Dimitrijević1, Alberto J. Palma3, Srboljub Stanković4 and Marko S. Andjelković5
Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
Electronics, vol. 11, no. 6, p. 918, Mar. 2022
doi: 10.3390/electronics11060918
1 University of Niš, Serbia
2 University of Belgrade, Serbia
3 University of Granada, Spain
4 “Vinča” Institute of Nuclear Sciences, Belgrade, Serbia
5 IHP, Frankfurt an der Oder, Germany
Abstract: The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
Fig: Block diagram of experimental setup.
Acknowledgement: This research was funded by the European Union’s Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science, and Technological Development of the Republic of Serbia under the project No. 43011.
Japan Looks to Revive Semiconductor Industry
[@RobertQ84643496] Japan Looks to Revive Semiconductor Industry Source: https://t.co/F1mfLCCS1e #semi #semiconductorindustry #manufacturing #technology #computerchips #taiwan #europe #engineering https://t.co/WtAHUzChwj
— Wladek Grabinski (@wladek60) Mar 31, 2022
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