4th Silicon Saxony Day

in fact, coming 4th Silicon Saxony Day will be organized as a two days evetn with the plenary session on 12.05.09 with the speakers from the semiconductor, photovoltaic, automotive, aerospace and software industry presenting examples of the Saxon High-Tech competitiveness. And following technical sessions on 13.05.09:

• Photovoltaic
• MEMS – Sensors – Photonic
• Smart Electronics and Applications
• Services and Networking
• SATNAV Saxony Kick-off Meeting
• Cool Silicon Kick-off Meetings

IEEE Papers in April 2009

Two nice papers:

A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain
Zhu, G.; Zhou, X.; Lee, T. S.; Ang, L. K.; See, G. H.; Lin, S.; Chin, Y. K.; Pey, K. L.
Abstract

Metal-Gate FinFET Variation Analysis by Measurement and Compact Model
O'uchi, S.; Matsukawa, T.; Nakagawa, T.; Endo, K.; Liu, Y.; Sekigawa, T.; Tsukada, J.; Ishikawa, Y.; Yamauchi, H.; Ishii, K.; Suzuki, E.; Koike, H.; Sakamoto, K.; Masahara, M.
Abstract

2009 IEEE RFIC Symposium Boston, Massachusetts June 7-9, 2009

The 2009 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium will be held in Boston, Massachusetts on June 7-9, 2009 in conjunction with the IEEE MTT-S International Microwave Symposium. It opens Microwave Week 2009, the largest world-wide RF/Microwave meeting of the year.

Conference highlights are now online!

• Plenary talks
• Christopher Snowden, Ph.D., Vice-Chancellor and CEO of the Uni Surrey, Guildford, UK,
  “Cost-effective Semiconductor Technologies for RF and Microwave Applications.”
  
• George W. Everhart, CEO of Alien Technology Corporation
  “Real world RFID Deployments: What Makes Them Work.”
• Workshops
• Panel Sessions

For all the details, please check the program book.

IMEC presented 22nm CMOS SRAM 0.099µm2 cell:

IMEC presented the world's first functional 22nm CMOS SRAM cells made using EUV lithography. The 0.099µm² SRAM cells are made with FinFETs. In its core EC program PULLNANO, IMEC works together with leading IC companies on future CMOS technologies. Key partners in 2009 are Intel, Micron, Panasonic, Samsung, TSMC, Elpida, Hynix, Powerchip, Infineon, NXP, Qualcomm, Sony, ST Microelectronics. With such concerted collaborations, the semiconductor industry is able to keep innovating and to follow Moore's momentum, noted Luc Van den hove, COO at IMEC.

Further information on IMEC can be found at www.imec.be

IBM 28nm CMOS Technology

IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28nm, high-k metal gate (HKMG), low-power bulk CMOS process technology.

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