Process for the Selection of the Next Generation SOI MOSFET Compact Models

The Compact Modeling Council (CMC) has started the Process for the Selection of the Next Generation SOI MOSFET Compact Models.

The CMC is soliciting SOI models for both partially-depleted (PD) and dynamic depletion (DD) applications. DD refers to SOI devices which exhibit PD behavior forsome bias regions, but are fully-depleted (FD) for others.

The deadline for candidate submission is May 5 2008. CMC officers will invite a number of selected model developers to the CMC Meeting in Boston, MA on 6/5/2008.

A new selection will be done after CMC members have had time to review the presentations given by model developers.

A SOI MOSFET model recommended by CMC will make lots of money!

Who wants to compete?

Training Course on SOI for analog,digital and RF SOCs and microsystems applications

This training course on SOI for analog,digital and RF SOCs and microsystems applications will take place at IMEC (Heverlee, Belgium) on May 15-16 2008.

This course is organized by the IMEC Training Center in collaboration with Prof. Denis Flandre (UCL, Louvain-la-Neuve, Belgium).

The course will address topics such as SOI MOSFET specific behaviors and performance assessments, SOI MOS analog design, micromachined SOI MEMS, on-wafer wideband characterization, and SOI FinFET integration and circuits.

The lecturers are prestigeous researchers from IMEC and UCL, all of them experts in SOI technologies.

It seems a very interesting course for SOI MOS circuit designers!

Course: "New Trends in Nanoelectronics" in Lausanne

The course "New Trends in Nanoelectronics" will be organized by Prof. Adrian M. Ionescu, from EPFL (Lausanne, Switzerland). This two-day course will take place in Lausanne on May 22-23 2008.

The purpose of the course is to provide a general knowledge about emerging nanoelectronics including technology, nanowires and nanotubes, memory device architectures, nanoelectromechanical devices, and benchmarking for circuit and system applications.

The lecturers that will participate will be A. M. Ionescu, K. E. Moselund (EPFL) and H. -S. Philip Wong (stanford University).

Open Ph D Student position in nanoelectronic device modeling

We offer one fellowship for a Ph D student position in the Department of Electronic Engineering in the Universitat Rovira i Virgili (URV), in Tarragona, Spain.

The duration of the grant will be at least three years, possibly four. The monthly salary will be 1000 Euro/month.

The candidate should have a Bachelor or Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.

The work to be done by the candidate will be focused on the development of new techniques of characterization and modeling of novel nanoscale semiconductor devices. It will be related to two European projects in which the hosting group participates.

To get more information about our areas of research in the DEEEA, you can visit the website:

http://sauron.etse.urv.es/DEEEA/angles/recerca/nephos/scholarships.htm

And

http://sauron.etse.urv.es/DEEEA/angles/recerca/nephos

Required documents for applicants


Applicants are required to send to the address specified below the following documents (in English or Spanish):

1) a full Curriculum Vitae (as complete as possible)

2) Copy of their diploma

3) copy of their passport

4) Academic certificate including their marks (it is important that the number of hours of each subject). It is also very important that the document specifies what is the minimum mark for passing a given subject and what is the maximum mark that can be awarded.

Candidates can send their documents by e-mail, but in fact we will need original and copy documents (or authenticated copy) of them; therefore we suggest to send the documents by postal mail.

Applications should be sent to:

Prof. Benjamin Iñiguez
Department of Electronic, Electrical and Automatic Control Engineering

Universitat Rovira i Virgili (URV)

Avinguda Països Catalans, 26
43007 Tarragona (Spain)
Email: benjamin.iniguez@urv.cat
Tel: +34977558521 Fax:+34977559610

Deadline: July 20 2008

You can contact Prof. Benjamin Iñiguez (Benjamin.Iniguez@urv.cat) for more information

Tarragona is a medium city (100000 inhabitants) with a Mediterranean climate and many recreation opportunities (nice beaches, theme parks, nature preserves, mountain hiking, touristic resorts and facilities). It is located 100 km Southwest of Barcelona, and it is very well connected by train, bus, highways and even low cost flights from its own airport. Additional information about the University and the department can be found at: www.urv.cat and sauron.etse.urv.es

MIGAS'08 Summer School

The 11 session of the MIGAS Summer School (International Summer School on Advanced Microelectronics) will be dedicated to Nanoscale CMOS and Si-Based Beyond CMOS Nanodevices.

MIGAS 2008 will take place in Autrans (French Alps) from June 28 to July 4 2008.

MIGAS is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.

The attendees will be able to improve their knowledge on nanoelectronic devices by means a set of lectures conducted by top international scientists.

The scienfific programme will consists of the following lectures:

1) Advanced materials, technology and characterization methods for nanoscale CMOS - Strained SOI materials for high performance MOSFETs, C. Mazuré, SOITEC - Advanced global strain-tuning platforms, M. Myronov, The University of Warwick - High k dielectrics and metal gates, O. Engstrom, Chalmers University - Schottky source-drain contacts, E. Dubois, IEMN - Emerging nanotechnologies, T. Baron, LTM - New characterization methods for nanoMOSFETs, G. Ghibaudo, IMEP-LAHC 2) Novel CMOS architectures - Multi-gate and multi-channel MOSFETs, T. Ernst , Leti - Silicon-On-Nothing nanodevices, T. Skotnicki, STMicroelectronics - Ge channel MOSFETs, G. Eneman, IMEC - III-V channel MOS transistors, A. Dimoulas, Demokritos 3) Beyond-CMOS Nanodevices - Small slope Switches, A. Ionescu, EPFL - Nanowires, J.P. Raskin, UCL - Carbon electronics, J. Xu, Brown University 4) Innovative Memories - Non-volatile memories, L. Baldi, Numonyx - Advanced DRAM, M. Golbach, Qimonda - Emerging memories, H.-S. Ph. Wong, Stanford University

Besides, MIGAS includes a great social programme, with activities such as excursions the day before the beginning of the school, wine tastings, and copious dinners based on the excellent Dauphinoise and Vercors cuisine, and with great wines. Of course, the area around Autrans offers excellent opportunities for hiking, mountaineering, mountain-biking, lake swimming and more.

Registration includes accomodation in the resort as well as all meals.