[IEEE SSCS] “PICO” Open-Source Chipathon

IEEE SSCS “PICO” Open-Source Chipathon

Automating Analog Layout

https://sscs.ieee.org/about/tc-ose/sscs-pico-design-contest

– Sign-Up Deadline: May 10, 2024 –

The IEEE Solid-State Circuits Society is pleased to announce its fourth open-source integrated circuit (IC) design contest under the umbrella of its PICO Program (Platform for IC Design Outreach). While this contest is open to anyone (no restrictions), we encourage the participation of pre-college students, undergraduates, and geographical regions that are underrepresented within the IC design community. 

The goal of this year’s event is to advance the automatic generation and open sharing of analog circuit layout cells to increase our community’s design productivity and to catch up with other fields where sharing and automation is a key enabler of progress (e.g., in machine learning).

Die photo in background courtesy of IBM

Contest Outline

1. Interested individuals sign up using this form by May 10, 2024.
2. Phase 1 (~June): Through a series of weekly meet-ups and training sessions, the participants learn to create basic one- or two-transistor layout generators using Python and open-source CMOS PDKs. Using Jupyter Notebooks hosted on Google Colab allows anyone with an internet connection to participate - no downloads or installations required! Relevant circuit examples can be found in [1], [2]. We will leverage code modules available with the OpenFASoC [3] environment.
3. Phase 2 (~July): Interested participants define larger layout building blocks that they wish to automate (examples: comparator, bandgap, phase interpolator, OTA). Teaming among participants is encouraged to maximize collaboration and learning).
4. Phase 3 (~August-September): Participants implement their generators and submit sample layouts and test structures for potential tape-out to an open-source MPW (tentatively SKY130).
5. Phase 4 (~October-November): A jury evaluates the created generators/layouts and selects the test structures that will be taped out. The teams work together to assemble a shared database with all the designs and to complete the tapeout. Ideally, this phase will involve automated verification through CACE [4] or a similar tool.
6. Phase 5 (TBD): The designs will be tested using lab measurements by a subset of participants and SSCS volunteers with access to lab facilities. Some of the test setups may be available for remote characterization. The obtained measurement data will be added to the repositories containing the layout generators.

 References

[1] H. Pretl, “Fifty Nifty Variations of Two-Transistor Circuits,” MOS-AK Workshop Spring 2022, URL: https://www.mos-ak.org/spring_2022/presentations/Pretl_Spring_MOS-AK_2022.pdf.
[2] H. Pretl and M. Eberlein, "Fifty Nifty Variations of Two-Transistor Circuits: A tribute to the versatility of MOSFETs," in IEEE Solid-State Circuits Magazine, vol. 13, no. 3, pp. 38-46, Summer 2021, URL: https://ieeexplore.ieee.org/document/9523464.
[3] OpenFASoC: Fully Open-Source Autonomous SoC Synthesis using Customizable Cell-Based Synthesizable Analog Circuits, https://github.com/idea-fasoc/OpenFASOC/.
[4] Circuit Automatic Characterization Engine, URL: https://github.com/efabless/cace.

[course] MEAD @ EPFL

Low-Power Analog Circuit Design

Live Course @ EPFL, Lausanne, Switzerland

JUNE 17-21, 2024

Registration Deadline: May 17, 2024 >> REGISTER

MONDAY, June 17
8:30 am-12:00 pm	MOS Transistor Modeling for Low-Voltage and Low-Power Circuit Design	Christian Enz
1:30-5:00 pm	Design of Low-Power Analog Circuits using the Inversion Coefficient	Christian Enz
TUESDAY, June 18
8:30 am-12:00 pm	Noise Performance of Elementary Circuit Blocks	Boris Murmann
1:30-5:00 pm	Opamp Topologies and Design Fundamentals	Boris Murmann
WEDNESDAY, June 19
8:30-10:00 am	Low-Power High Efficiency OpAmp Design	Klaas Bult
10:30 am-12:00 pm	Low-Power High Efficiency Residue Amplifiers	Klaas Bult
1:30-3:00 pm	Analog Design Methodology and Practical Techniques for Frequency Compensation	Vadim Ivanov
3:30-5:00 pm	Energy Efficient Voltage References, Biasing in Analog Systems and Current Sources	Vadim Ivanov
THURSDAY, June 20
8:30-10:00 am	Power Dissipation in ADC Buidling Blocks	Klaas Bult
10:30 am-12:00 pm	Power Dissipation in ADCs	Klaas Bult
1:30-5:00 pm	Micropower ADCs	Kofi Makinwa
FRIDAY, June 21
8:30 am-12:00 pm	Energy Efficient Sensor Interfaces	Taekwang Jang
1:30-5:00 pm	Low-Power Frequency Reference Circuits	Taekwang Jang
1:30-5:00 pm	Power Management With Nanoampere Consumption and Efficient Energy Harvesting	Vadim Ivanov

[paper] Symmetric BSIM-SOI

Chetan Kumar Dabhi, Dinesh Rajasekharan, Girish Pahwa, Debashish Nandi, Naveen Karumuri, Sreenidhi Turuvekere, Anupam Dutta, Balaji Swaminathan, Srikanth Srihari, Yogesh S. Chauhan, Sayeef Salahuddin, and Chenming Hu

Symmetric BSIM-SOI: A Compact Model for Dynamically Depleted SOI MOSFETs 

 in IEEE TED (2024)

Part I DOI: 10.1109/TED.2024.3363110

Part II DOI: 10.1109/TED.2024.3363117

1 Department of Electrical Engineering and Computer Sciences, UCB, CA, USA

2 Department of Electrical Engineering, IIT Kanpur, India

3 GlobalFoundries, Bengaluru, India

Abstract: In this article, we present a symmetric surface-potential-based model for dynamic depletion (DD) device operation of silicon-on-insulator (SOI) FETs for RF and analog IC design applications. The model accurately captures the device behavior in partial depletion (PD) and full depletion (FD) modes, as well as in the transition from PD to FD, based on device geometry, doping, and bias conditions. The model also exhibits an excellent source–drain symmetry during dc and small-signal simulations, resulting in error-free higher order harmonics. The model is fully scalable with bias, temperature, and geometry and has been validated extensively with real device data from the industry. The symmetric BSIM-SOI model is developed in Verilog-A and compatible with all commercial SPICE simulators.

FIG: (a) Schematic of a typical SOI MOSFET

(b) Cgg versus Vgb for different substrate bias, with the PD-to-FD transition 

Acknowledgment: The authors thanks the members of the Compact Model Coalition (CMC), particularly Geoffrey J. Coram and Jushan Xie, for testing the model and suggesting improvements. The authors appreciate the CMC QA team’s efforts in conducting a model quality check. Caixia Han and Xiao Sun from Cadence provided a few useful test cases. They thank Ananth Sundaram and Anamika Singh Pratiyush from GlobalFoundries India for the help and discussion regarding DDSOI model intricacies and development. Model code is available at BSIM Website <https://bsim.berkeley.edu/models/bsimsoi/>

[paper] Analog System Synthesis for Reconfigurable Computing

Afolabi Ige, Linhao Yang, Hang Yang, Jennifer Hasler, and Cong Hao

Analog System High-Level Synthesis for Energy-Efficient Reconfigurable Computing

J. Low Power Electron. Appl. 2023, 13, 58. 

DOI: 10.3390/jlpea1304005

* Electrical and Computer Engineering (ECE), Georgia Institute of Technology (USA)

Abstract: The design of analog computing systems requires significant human resources and domain expertise due to the lack of automation tools to enable these highly energy-efficient, high-performance computing nodes. This work presents the first automated tool flow from a high-level representation to a reconfigurable physical device. This tool begins with a high-level algorithmic description, utilizing either our custom Python framework or the XCOS GUI, to compile and optimize computations for integration into an Integrated Circuit (IC) design or a Field Programmable Analog Array (FPAA). An energy-efficient embedded speech classifier benchmark illustrates the tool demonstration, automatically generating GDSII layout or FPAA switch list targeting.

Figure: The analog synthesis tool flow to generate a design on a large-scale Field Programmable Analog Array (FPAA) or an Application-Specific Integrated Circuit (ASIC). A single user-supplied high-level description goes through multiple lowering steps to reach the targeted output, either GDSII or a switch list. For targeting an FPAA, a design can either be specified through the GUI in XCOS (a pre-existing flow) or through the new text-based Python flow. Users construct circuits and systems using class objects provided in the Python cell library that mirror the palette browser in the XCOS library, and the description is then lowered into a Verilog syntax. The FPAA path lowers to Blif netlist, fitting into our preexisting flow compiling a switch list to target the FPAA. For targeting an ASIC, users perform similar steps to construct a system from Python objects with cells made available in the provided library. Those Python objects are then converted to a Verilog netlist before being fed to the layout synthesis modules, which handle placement and global routing. These serve as inputs to the open-source detailed router (TritonRoute) to convert the guide to a path. That path is merged with the placement file to create a final output layout file.

Funding: Partial funding for the development of this effort came from NSF (2212179).

[chapter] Systematic Design of Analog CMOS Circuits with Lookup Tables

Systematic Design of Analog CMOS Circuits with Lookup Tables

By Paul G. A. Jespers, Université Catholique de Louvain, Belgium

in Foundations and Trends in Integrated Circuits and Systems

Vol. 2: No. 3, pp 193-243. http://dx.doi.org/10.1561/3500000004

Publication Date: 08 May 2023

© 2023 P. G. A. Jespers*

ABSTRACT The idea underlying the methodology described in this monograph consists in the use of a set of Lookup Tables embodying device data extracted prior from systematic runs done once and for all using an advanced circuit simulator, the same as used for final design verifications. In this way, all parameters put to use during the sizing procedure incorporate not only the bearings of bias conditions and geometry, but also every second-order effect present in the simulator’s model, in particular short-channel effects. Consequently, the number of verification simulations one has to perform is not only substantially reduced, but the designer may concentrate on actual design strategies without being bothered by inconsistencies caused by poor models or inappropriate parameters.

Fig: The drain current ID versus the gate-to-source voltage VGS (plain lines) compared to the EKV best fit (+). The other lines represent the exponential and quadratic approximations.

∗The author acknowledges the kind support of Prof. Boris Murmann in writing this monograph.

[paper] CMOS floating-gate device for quantum control hardware

Michele Castriotta¹, Enrico Prati², Giorgio Ferrari¹

Cryogenic characterization and modeling of a CMOS floating-gate device 

for quantum control hardware

preprint arXiv:2110.02315, 2021

1 Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano (I)
2 Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche (I)

Abstract - We perform the characterization and modeling of a floating gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and flexible cryogenic system for qubits control in large-scale quantum computers. The device stores onto a floating-gate node a non-volatile charge, which can be bidirectionally modified by Fowler-Nordheim tunneling and impact-ionized hot electron injection. These two injection mechanisms are characterized and modeled in compact equations both at 300 K and 15 K. At cryogenic temperature, we show a fine-tuning of the stored charge compatible with the operation of a precise analog memory. Moreover, we developed accurate simulation models of the proposed floating-gate device that set the stage for designing a programmable analog circuit with better performances and accuracy at a few Kelvin. This work offers a solution in the design of configurable analog electronics to be employed for accurately read out the qubit state at deep-cryogenic temperature.

Fig: Simplified layout of the p-type floating-gate device under test. The capacitive coupling to the floating-gate node  is realized with the poly 2 control gate.

Acknowledgments: This work was supported by QUASIX Grant from  Italian Space Agency. This work was partially performed at Polifab, the  micro- and nanofabrication facility of Politecnico di Milano

[chapter] Low-Voltage Analog IC Design

Deepika Gupta¹

Low-Voltage Analog Integrated Circuit Design

Nanoscale VLSI. Book series (ESIEE) (2020) pp 3-22

DOI: 10.1007/978-981-15-7937-0_1

¹Department of Electronics and Communication Engineering, IIIT Naya Raipur, India

Abstract: In this chapter, we review the challenges and effective design techniques for ultra-low-power analog integrated circuits. With the miniaturization, having low-power low-voltage mixed signal IC is essential to maintain the electric field in the device. This constraint presents bottleneck for the researchers to design robust analog circuits. Specifically, the low value of supply voltage with small technology influences many specifications of analog IC, e.g., power supply rejection, dynamic range and immunity to noise, etc. In addition, it also affects the ability of the MOS transistor to be operated in the strong inversion region. Note that with the technology reduction, power supply VDD is reducing but the threshold voltage VT is not decreasing proportionally to maintain low leakage current. However, this process reduces the overdrive voltage and limits the staking of transistors. In this case, the transistor can be made to work in weak inversion to work and reduce the power consumption. Further, reduction in VDD to achieve low-power consumption causes many other circuit-related issues such as PVT variations, degradation of dynamic range, mismatching in circuits element and differential paths. There have been many design methods developed for the ultra-low-power analog ICs. In this chapter, we will discuss some of the design techniques to reduce the power consumption in analog ICs. In addition, we will also discuss the basic building blocks of analog circuits with discussed design techniques. The charge-based EKV model can be a very suitable example of a MOS simulation model to be used in all inversion regions of transistor operations [Enz 2017]. In EKV model, the smallest number of core parameters is needed for the accurate behavioral modeling of transistor. Particularly, charge-based EKV model is beneficial for the analysis of analog circuits because it allows the analysis with simple calculations over different inversion regions. Hence, developing new device simulation models specific for analog circuit design is crucial.

Fig: Vth and Vdd scaling trend vs. Leff  [Zhao 2006]

References:

[Enz 2018] Enz C, Chicco F, Pezzotta A (2017) Nanoscale MOSFET modeling-part 1: the simplified EKV model for the design of low-power analog circuits. IEEE Solid-State Circuits Magazine 9(3):26–35

[Zhao 2006] Zhao W, Cao Y (2006) New generation of predictive technology model for sub-45 nm early design exploration. IEEE Trans Electron Devices 53(11):2816–2823

Analog IC Designer's Handbook

Top-Down method at work in analog IC design

by Jean-Francois Debroux

 

Abstract: Analog IC design is one of the particular design activities where designers get feedback on their choices only months after they finish their design and where the cost of even the smallest design change is huge.

This has historically brought the need for new tools such as SPICE, the ancestor of almost all the electric simulators, so as to give feedback on the design choices before actually getting the prototypes. This should also have deeply impacted the design methods, and it has, but the availability of simulators has finally allowed the old “try and fix” method not only to survive but also to stay very popular.

If tools such as electric simulators have gained popularity in most electronic design fields, even out of the IC design world, methods such as the TOP-DOWN approach are not as popular as they should be, especially in the analog design community, even in the analog IC design microcosm. This is probably because this method is felt as difficult to use practically even though most designers agree that it is the right approach.

The goal of this book is to show that the TOP-DOWN approach for analog design is not only valid but that it is one of the most powerful available methods to create good analog design without sacrificing the time to market. This method creates faster and better designs but requires a good understanding of the method itself, of course, but also of the underlying techniques and of the basic design elements.

After a general introduction of the TOP-DOWN method goals and principles in the first part, the second part presents and details analog IC design elements from components to basic building blocks with a strong emphasis on practical aspects. Various additional design techniques are then detailed in the third part. The reader is then ready for the main course, a series of design examples based on the TOP-DOWN method that are grouped in the fourth part. These examples are processed the way they are in real life, from specification to implementation, from general considerations down to implementation details. Analysis of existing circuits is useful for learning but real life design is synthesis, not analysis.

Finally, the fifth part introduces or reminds useful basic concepts and presents the notation in use through the book.

The methods and techniques described in this book have been used by the author through 25 years of analog and mixed signal ICs design experience in various application fields including RF and sensor signal conditioning for various markets such as industrial, automotive and aerospace. The author feels that the method he presents in this book can help many analog electronic designers in their day to day work and hopes it will bring both a deeper understanding of design and a broader view over design activities. [read more...]

Contact / Feedback: jean-francois.debroux@orange.fr

Experience: See  Jean-Francois Debroux profile on LinkedIn

[paper] Nanoscale MOSFET Modeling

 Nanoscale MOSFET Modeling: 
Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

C. Enz, F. Chicco and A. Pezzotta

in IEEE Solid-State Circuits Magazine, vol. 9, no. 3, pp. 26-35, Summer 2017

doi: 10.1109/MSSC.2017.2712318

Abstract: This article presents the simplified charge-based Enz-Krummenacher-Vittoz (EKV) [11] metal-oxide-semiconductor field-effect transistor (MOSFET) model and shows that it can be used for advanced complementary metal-oxide-semiconductor (CMOS) processes despite its very few parameters. The concept of an inversion coefficient (IC) is first introduced as an essential design parameter that replaces the overdrive voltage V_G-V_T0 and spans the entire range of operating points from weak via moderate to strong inversion (SI), including the effect of velocity saturation (VS). The simplified model in saturation is then presented and validated for different 40- and 28-nm bulk CMOS processes. A very simple expression of the normalized transconductance in saturation, valid from weak to SI and requiring only the VS parameter mc, is described. The normalized transconductance efficiency G_m/I_D, which is a key figure-of-merit (FoM) for the design of low-power analog circuits, is then derived as a function of IC including the effect of VS. It is then successfully validated from weak to SI with data measured on a 40-nm and two 28-nm bulk CMOS processes. It is then shown that the normalized output conductance G_ds/I_D follows a similar dependence with IC than the normalized G_m/I_D characteristic but with different parameters accounting for drain induced barrier lowering (DIBL). The methodology for extracting the few parameters from the measured I_D-V_G and I_D-V_D characteristics is then detailed. Finally, it is shown that the simplified EKV model can also be used for a fully depleted silicon on insulator (FDSOI) and Fin-FET 28-nm processes [read more...]

FIG: The simplified EKV model applied to a 28-nm FDSOI CMOS process: 

G_m n U_T / I_D versus IC for three different transistor channel lengths

References

[1] A. Bahai, “Ultra-low energy systems: Analog to information,” in Proc. European Solid-State Circ. Conf., Sept. 2016, pp. 3–6.

[2] D. Binkley, Tradeoffs and Optimization in Analog CMOS Design. Hoboken, NJ: Wiley, 2008.

[3] W. Sansen, Analog Design Essentials. New York: Springer-Verlag, 2006.

[4] A. Mangla, M. A. Chalkiadaki, F. Fadhuile, T. Taris, Y. Deval, and C. C. Enz, “Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model,” Microelectr. J., vol. 44, no. 7, pp. 570–575, July 2013.

[5] Y. S. Chauhan, S. Venugopalan, M. A. Chalkiadaki, M. A. U. Karim, H. Agarwal, S. Khandelwal, N. Paydavosi, J. P. Duarte, C. C. Enz, A. M. Niknejad, and C. Hu, “BSIM6: Analog and RF compact model for bulk MOSFET,” IEEE Trans. Electron Dev., vol. 61, no. 2, pp. 234–244, Feb. 2014.

[6] C. Enz, M. A. Chalkiadaki, and A. Mangla, “Low-power analog/RF circuit design based on the inversion coefficient,” in Proc. European Solid-State Circ. Conf., Sept. 2015, pp. 202–208.

[7] C. Enz and A. Pezzotta, “Nanoscale MOSFET modeling for the design of low-power analog and RF circuits,” in Proc. Int. Conf. MIXDES, June 2016, pp. 21–26.

[8] W. Sansen, “Analog CMOS from 5 micrometer to 5 nanometer,” in Proc. IEEE Int. Solid State Circuits Conf. Dig. Tech. Papers, Feb. 2015, pp. 1–6.

[9] W. Sansen, “Analog design procedures for channel lengths down to 20 nm,” in Proc. IEEE 20th Int. Conf. Electronics, Circuits, and Systems, Dec. 2013, pp. 337–340.

[10] C. C. Enz and E. A. Vittoz, Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design. Hoboken, NJ: Wiley, 2006.

[11] C. C. Enz, F. Krummenacher, and E. A. Vittoz, “An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications,” Analog Integr. Circuits Signal Process. J., vol. 8, pp. 83–114, July 1995.

[12] P. Heim, S. R. Schultz, and M. A. Jabri, “Technology-independent biasing technique for CMOS analogue micropower implementations of neural networks,” in Proc. Sixth Australian Conf. Neural Networks, Sydney, Australia, 1995, pp. 9–12.

[13] C. C. Enz and E. A. Vittoz, “CMOS low-power analog circuit design,” in EmergingTechnologies: Designing Low Power Digital Systems, R. Cavin and W. Liu, Eds. Piscataway, NJ: IEEE, 1996, pp. 79–133.

[14] E. Vittoz and J. Fellrath, “CMOS analog integrated circuits based on weak inversion operations,” IEEE J. Solid-State Circuits, vol. 12, no. 3, pp. 224–231, June 1977.

[15] A. Mangla, C. C. Enz, and J. M. Sallese, “Figure-of-merit for optimizing the current efficiency of low-power RF circuits,” in Proc. Int. Conf. Mixed Design Integrated Circuits and Systems, June 2011, pp. 85–89.

[16] A. Mangla, “Modeling nanoscale quasi-ballistic MOS transistors,” Ph.D. dissertation, EPFL, Switzerland, Dissertation No. 6385, 2014.

[17] R. R. Troutman and A. G. Fortino, “Simple model for threshold voltage in a short- channel IGFET,” IEEE Trans. Electron. Dev., vol. 24, no. 10, pp. 1266–1268, Oct. 1977.

[18] N. Arora, MOSFET Models for VLSI Circuit Simulation. New York: Springer-Verlag, 1993.

[19] Z. H. Liu, C. Hu, J. H. Huang, T. Y. Chan, M. C. Jeng, P. K. Ko, and Y. C. Cheng, “Threshold voltage model for deep submicrometer MOSFETs,” IEEE Trans. Electron Dev., vol. 40, no. 1, pp. 86–95, Jan. 1993.

[20] M. A. Chalkiadaki, “Characterization and modeling of nanoscale MOSFET for ultra-low power RF IC design,” Ph.D. dissertation, EPFL, Switzerland, Dissertation No. 7030, 2016.

[call for papers] 2017 IEEE S3S Conference

Overview: This industry - wide event has gathered, for over 30 years, industry leaders and widely known experts, in a social - oriented environment. Our contributed papers and invited talks are focused on SOI Technology, Low - Voltage Devices/Circuits/Architectures, and 3D Integration. These 3 technologies will play a major role in tomorrow's industry as they enable application - tailored and Energy / Cost efficient circuit designs.

Important Dates

Paper Submission Deadline: May 22, 2017

Acceptance Notification: July 1, 2017

The conference at a glance

Monday to Wednesday, Oct. 16-18, 2017: Technical Sessions

Thursday, Oct.19: Fully - Depleted SOI Circuit Design; Full-day Tutorial
Tuesday, Oct.17: Monolithic 3D Half-day Tutorial

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Scope: We welcome papers in the following areas:
Silicon On Insulator (SOI)
• Advanced Materials, Substrate and Processes • Device Physics, Characterization and Modeling • Device/Circuit Integration • SOI Design, Circuits and Applications	• Non-Digital Devices and Applications (RF, HV, Photonics, NEMS, MEMS, Analog...) • New SOI Structures, Circuits and Applications
Low-Voltage Microelectronics
• Space-Based and Unattended Remote Sensors • Biomedical Devices • Low-Voltage Handheld/wireless systems • Ultra-Low-Power Digital Computation • Analog and RF Technologies	• Low Voltage Memory Technologies • Energy Harvesting Techniques • Asynchronous Circuits • Novel Device and Fabrication Technology
3D Integration
• Low Thermal Budget Processing • Fabrication Techniques and Bonding Methods • Design and Test Methodologies • Processes for Multi Wafer Stacking • 3D IC EDA and Design Technology	• Heterogeneous Structures • 3D Manufacturing and Logistics • Reliability of 3D Circuits • Fault Tolerant 3D Designs

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Paper Submission:
Prospective authors should prepare a 2page abstract (follow online guidelines).
Acceptance is based on paper’s technical quality and relevance.

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Conference manager contact Joyce Lloyd
6930 De Celis Pl., #36
Van Nuys, CA 91406
Tel: +1 818 795 3768
Fax: +1 818 855 8392

[paper] Impact of technology scaling on analog and RF performance of SOI–TFET

Impact of technology scaling on analog and RF performance of SOI–TFET

P Kumari, S Dash and G P Mishra
Advances in Natural Sciences: Nanoscience and Nanotechnology, Volume 6, Number 4 

Published 9 October 2015

Abstract

This paper presents both the analytical and simulation study of analog and RF performance for single gate semiconductor on insulator tunnel field effect transistor in an extensive manner. Here 2D drain current model has been developed using initial and final tunneling length of band-to-band process. The investigation is further extended to the quantitative and comprehensive analysis of analog parameters such as surface potential, electric field, tunneling path, and transfer characteristics of the device. The impact of scaling of gate oxide thickness and silicon body thickness on the electrostatic and RF performance of the device is discussed. The analytical model results are validated with TCAD Sentaurus device simulation results [read more...]

Citations
[1] Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs Subhrasmita Panda et al  2016 Journal of Computational Electronics 15 1326
[2] S. Sahoo et al  2016 337
[3] A comprehensive investigation of silicon film thickness (T SI) of nanoscale DG TFET for low power applications Rajeev Ranjan et al  2016 Advances in Natural Sciences: Nanoscience and Nanotechnology 7 03500
[4] A complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale M K Yadav et al  2016 Advances in Natural Sciences: Nanoscience and Nanotechnology 7 025011
[5] S. Dash et al  2015 447
   

NDES 2012 July 11 – 13, 2012, Wolfenbüttel, Germany

The conference aims at stimulating and enabling scientists from all over the world to exchange know-ledge and ideas in the field of nonlinear dynamics and its applications in a friendly atmosphere. Nonlinear phenomena are observed in diverse areas such as physics, biology, economics, electronics and computer science. The conference will cover cutting-edge research in these highly active fields and explore new perspectives of nonlinear dynamics in interdisciplinary applications. The scope of interest includes, but it is not limited to:

• Theory, analysis, modelling, implementations and applications of nonlinear circuits and systems in science, technology and biology
• Nonlinear network analysis
• Neural networks, neurodynamics, robots 
• Nonlinear signal processing: Time-series analysis, communication, coding
• Nonlinear devices: Sensors, lasers
• Bifurcation and chaos, control and synchronisation
• Geodynamics

Wolfgang Mathis (Conference Chair, Organizing Committee)
Ruedi Stoop (Conference Co-Chair, Organizing Committee)

[read more...]

ISSCC 2010 Preview: Assessing '05 predictions

A couple of safe ISSCC'05 bets reviewd by Don Scansen. Have ISSCC organizers learned something by looking back?

CMOS vs. Bipolar Operational Amplifiers: Which is best for my application?

CMOS, bipolar or even BiCMOS are common process technologies used for the development of operational amplifiers, and each of these process technologies offers their own advantages and disadvantages when it comes to op amp design. Which one’s the best in terms of:

• Power Consumption
• Voltage Offset
• Noise Performance

>>> Read further

7th IEEE EWDTS SYMPOSIUM

The main target of the IEEE East-West Design & Test Symposium (EWDTS 2009) is to exchange experiences between the scientists and technologies of the Eastern and Western Europe, as well as North America and other parts of the world, in the field of design, design automation and test of electronic systems. The symposium aims at attracting scientists especially from countries around the Black Sea, the Baltic states and Central Asia.

Symposium Deadlines:

• Submission deadline: May 30th, 2009
• Notification of acceptance: August 1st, 2009

Please go to http://www.molesystems.com/welcome/tttc/EWDTS/2008/login.php to submit your paper.

April 14, 2009: ESSDERC/ESSCIRC submission deadlines

ESSDERC/ESSCIRC submission deadlines have been moved to April 14, 2009!

Visit the conference web site: http://www.essderc2009.org

after Analogschaltungen'09 in Hannover

The workshop program included following topics:

• Novel CMOS/BiCMOS circuit architectures for the GHz range applications
  
• Models of semiconductor devices for analog/RF (GHz range) applications
  
• Influences of the system design and optimization on the components in the analog circuit applications
• Classical and quantum mechanical effects in analog/RF nano-silicon circuits at GHz frequencies
  

The workshop has been organized by:

• Prof. Dr. -Ing. Wolfgang Mathis, Leibniz Universität Hannover, Institut für Theoretische Elektrotechnik; Appelstr. 9A, 30167 Hannover

in cooperation with:

• Prof. Dr.rer. nat. Doris Schmitt- Landsiedel, TU München; Lehrstuhl für Technische Elektronik
• Prof. Dr. -Ing. Heinrich Klar, TU Berlin; Institut für Technische Informatik und Mikroelektronik
• Prof. Dr.-Ing. Y. Manoli, Universität Freiburg; IMTEK