[paper] Roadmapping of Nanoelectronics for the New Electronics Industry

Paolo Gargini¹,Francis Balestra², and Yoshihiro Hayashi³

Roadmapping of Nanoelectronics for the New Electronics Industry

Appl. Sci. 2022, 12(1), 308

DOI: 10.3390/app12010308

Received: 4 November 2021 / Revised: 17 December 2021 

Accepted: 20 December 2021 / Published: 29 December 2021

Academic Editor: Gerard Ghibaudo; This article belongs to the Special Issue Advances in Microelectronic Materials, Processes and Devices

   
1IEEE IRDS, (US)
2 CNRS, Grenoble INP (F)
3 Keio University, Tokyo (J)

Abstract: This paper is dedicated to a review of the international effort to map the future of nanoelectronics from materials to systems for the new electronics industry. The following sections are highlighted: the Roadmap structure with the international teams, the methodology and historical evolution, the various eras of scaling, the new ecosystems and computer industry, the evolving supply chain, the development of SoC and SiP, the advent of the Internet of Everything and the 5G communications, the dramatic increase of data centers, the power challenge, the technology fusion, heterogeneous and system integration, the emerging technologies, devices and computing architectures, and the main challenges for future applications.

FIG: 40 Years of Microprocessor Trend Data

Virtual Si Museum /2103/ Electron Devices Scaling

Other look at the electron device scaling: Trinitron CRT vs iPhone6 Retina HD LED display. Both were extracted for broken units:) Trinitron CRT (Sony's brand name for its line of aperture-grille-based CRTs) were introduced in 1968. Its standard TV resolution was 720x576-pixel for PAL. iPhone6 available since 2014 has the HD LED display 1334x750-pixel. Just estimate volume, resolution and power consumption scaling in both cases.

REF:

• Sony Trinitron A13JZVOOX
  5-inch (diagonal) CRT 720x576-pixel resolution for PAL at 192 ppi
• iPhone6 Retina HD display
  4.7-inch (diagonal) LED 1334x750-pixel resolution at 326 ppi

[paper] Impact of technology scaling on analog and RF performance of SOI–TFET

Impact of technology scaling on analog and RF performance of SOI–TFET

P Kumari, S Dash and G P Mishra
Advances in Natural Sciences: Nanoscience and Nanotechnology, Volume 6, Number 4 

Published 9 October 2015

Abstract

This paper presents both the analytical and simulation study of analog and RF performance for single gate semiconductor on insulator tunnel field effect transistor in an extensive manner. Here 2D drain current model has been developed using initial and final tunneling length of band-to-band process. The investigation is further extended to the quantitative and comprehensive analysis of analog parameters such as surface potential, electric field, tunneling path, and transfer characteristics of the device. The impact of scaling of gate oxide thickness and silicon body thickness on the electrostatic and RF performance of the device is discussed. The analytical model results are validated with TCAD Sentaurus device simulation results [read more...]

Citations
[1] Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs Subhrasmita Panda et al  2016 Journal of Computational Electronics 15 1326
[2] S. Sahoo et al  2016 337
[3] A comprehensive investigation of silicon film thickness (T SI) of nanoscale DG TFET for low power applications Rajeev Ranjan et al  2016 Advances in Natural Sciences: Nanoscience and Nanotechnology 7 03500
[4] A complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale M K Yadav et al  2016 Advances in Natural Sciences: Nanoscience and Nanotechnology 7 025011
[5] S. Dash et al  2015 447
   

Ten Years of Scaling

[source http://dger.at/2XTq]

BBC News: Meeting the man behind Moore's Law

Chip future... But, Dr Moore says, the industry can only go on shrinking transistors for so long. Eventually, the features will become so small that the atomic structure of the materials will be a limitation, possibly spelling the end of Moore's Law.

So what does he think will happen in the next 40 years?

"I'm through with making predictions," Moore chuckles. "Get it right once and quit."

Read More...