[Google Research] Releases Circuit Training, an Open-Source Framework for Automated Chip Floorplanning #semi https://t.co/BD4iXWv5aS

[Google Research] Releases Circuit Training, an Open-Source Framework for Automated Chip Floorplanning #semi https://t.co/BD4iXWv5aS

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[paper] Implementation of Low Power Inverter using JL DG TFET

Sabitabrata Bhattacharya and Suman Lata Tripathi

Implementation of Low Power Inverter 

using Si1‑xGex Pocket N & P‑Channel Junction‑Less Double Gate TFET

Silicon, Springer Nature B.V. 2021

Received: 19 October 2021 / Accepted: 16 December 2021

DOI: 10.1007/s12633-021-01628-w

  

* School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, Punjab, India

Abstract: In this paper tunnel field effect transistor is reintroduced as an efficient low power replacement of MOSFET. The main draw- backs of TFET devices, like low ON-state current and low ION/IOFF ratio, are removed by structural and material modifica- tions. The proposed device is named junction-less double gate TFET or JL DGTFET. The junction-less attribute is used to reduce fabrication complexity, double gate is used to have better control over channel conduction and enhance drive current, high k gate dielectric and high work function gate metal is used to increase ON current. Low band gap Si1-xGex pocket is used near source end of the device to further improve performance. Four-fold optimization of the device is done along with temperature analysis to propose the best possible structure and dimensions. The proposed junction-less DGTFET was found to show huge performance improvement in ION/IOFF (of the order of 1011) and short channel parameters (SS = 63.5 mV/dec- ade, DIBL = 22.2 mV/V) over existing TFET devices. Both N & P-channel of the device is implemented with the optimised values on 18 nm technology node. Finally, an inverter circuit using both the N & P-channel devices is implemented following the CMOS compatible structure, and it is found to give very good results at low power.

Fig: Design of inverter circuit using n-JL DGTFET and p- JL DGTFET

Acknowledgements: The authors acknowledge for the support and lab facility provided by department of VLSI design, School of Electronics and Electrical Engineering, Lovely Professional University, Punjab India.

American chip-making giant Intel is a shadow of its former self

[Naveed Sherwani] American chip-making giant Intel is a shadow of its former self Details: https://t.co/79n7d6rQJI #semi https://t.co/mkWoP5ms5t

— Wladek Grabinski (@wladek60) Jan 31, 2022

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Hdev: Open-Source SiGe and III-V HBT TCAD Simulator

Hdev: https://gitlab.com/metroid120/hdev_simulator

Hdev has been started as a TCAD simulator by Martin Claus at TU Dresden (initially named COOS). Hdev (heterostructure device) is a TCAD simulator focused on 1D and 2D simulations of HBTs. The purpose of Hdev is to allow easy technology analysis and optimization of heterostructure semiconductor devices. Later it has been adopted by Sven Mothes who also used it for CNTFET simulations. Then, it has been applied to organic semiconductors by Markus Müller in his bachelor and diploma theses, where the initial 2D drift-diffusion solver has been implemented. For his dissertation on InP HBTs, Markus Müller later created a fork of COOS aimed at HBT simulation. The fork has been renamed Hdev (heterostructure device) for highlighting the new focus of the software. Hdev is now applied to SiGe and III-V HBTs by Markus Müller in the scope of his PhD thesis.

Hdev Features:

• true 1D simulations => time efficient
• box discretization => easy to use
• semiconductor alloys => SiGe and III-V HBTs
• DC, AC and transient analysis
• augmented DD equation
• degenerate semiconductor statistics
• read and write hdf5 files
• GPL license

Figure 1: (left) vertical profile of the node three HBT and (right) transfer characteristics of the HBT from 1D energy-transport simulations at VBC = −0.7 V at 300 K.

The world needs more skilled semiconductor workers

[https://t.co/22F0rWWNRA] The world needs more skilled semiconductor workers #semi https://t.co/yKPWleJvnJ

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[paper] Embedded CMOS SOI UV Sensors

Michael Yampolsky, Evgeny Pikhay and Yakov Roizin

Embedded UV Sensors in CMOS SOI Technology

Sensors 2022, 22(3), 712;

DOI: 10.3390/s22030712

   
Tower Semiconductor, Migdal Haemek 2310502, Israel

Abstract: We report on ultraviolet (UV) sensors employing high voltage PIN lateral photodiode strings integrated into the production RF SOI (silicon on isolator) CMOS platform. The sensors were optimized for applications that require measurements of short wavelength ultraviolet (UVC) radiation under strong visible and near-infrared lights, such as UV used for sterilization purposes, e.g., COVID-19 disinfection. Responsivity above 0.1 A/W in the UVC range was achieved, and improved blindness to visible and infrared (IR) light demonstrated by implementing back-end dielectric layers transparent to the UV, in combination with differential sensing circuits with polysilicon UV filters. Degradation of the developed sensors under short wavelength UV was investigated and design and operation regimes allowing decreased degradation were discussed. Compared with other embedded solutions, the current design is implemented in a mass-production CMOS SOI technology, without additional masks, and has high sensitivity in UVC.

Fig: (a) A string of PIN photodiodes connected in series by silicide N+, P+, and iSi regions. The diodes are connected by butted silicide. The schematic cross section shows only three connected in series PIN diodes. (b) Cross section of a lateral PIN diode with contacts.

Nature India has highlighted Prof. Santanu Mahapatra work on energy storage in 2d #semi

Nature India has highlighted Prof. Santanu Mahapatra work on energy storage in two dimension #india #semi #2D #2dmaterials https://t.co/wPsqmK9GuW

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Sam Zeloof talks about his 1200 transistor chip

[Naveed Sherwani] Please watch the video, in which Sam Zeloof talks about his 1200 transistor chip #semi https://t.co/QZpqStfZ7A

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[Book] "GaN power devices and applications" edited by Alex Lidow, founder and CEO of GaN power transistor maker EPC https://t.co/nKeKsg83nJ #semi https://t.co/JPP8H6Qvyt

[Book] "GaN power devices and applications" edited by Alex Lidow, founder and CEO of GaN power transistor maker EPC https://t.co/nKeKsg83nJ #semi https://t.co/JPP8H6Qvyt

— Wladek Grabinski (@wladek60) Jan 27, 2022

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FOSDEM 2022 - Schedule https://t.co/RcJVmLrk52 * Libre-Open VLSI and FPGA devroom https://t.co/bgmsQJOTQy * Computer Aided Modeling and Design devroom https://t.co/blTQbn0cro #semi #SPICE #EDA #VLSI #FPGA #IC #Desing https://t.co/VqFiEuI8jH

FOSDEM 2022 - Schedule https://t.co/RcJVmLrk52 * Libre-Open VLSI and FPGA devroom https://t.co/bgmsQJOTQy * Computer Aided Modeling and Design devroom https://t.co/blTQbn0cro #semi #SPICE #EDA #VLSI #FPGA #IC #Desing https://t.co/VqFiEuI8jH

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[paper] Automatic Parameter Extraction of MOSFET Compact Models

Gazmend Alia^1,2, Andi Buzo¹, Hannes Maier-Flaig¹, Klaus-Willi Pieper¹, 

Linus Maurer²  and Georg Pelz¹

Automatic Parameter Extraction of MOSFET Compact Models using Differential Evolution with Population Prediction (DEpred)

6th EDTM; March 6 to 9, 2022 

   
1 Infineon Technologies AG, Munich (D)
2 Bundeswehr University Munich (D)

Abstract: Parameter extraction of MOSFET compact models with hundreds of parameters is not a trivial task. Differential evolution (DE) has proven to be very effective in such highly dimensional parameter spaces. However, DE needs a large number of iterations to converge. This paper proposes a novel method to accelerate the convergence of DE by predicting tens of iterations ahead where the population will be, based on the knowledge from the already finished iterations. The method is validated with BSIM4 and HiSIM-HV compact models, where up to 50% of the iterations are saved.

Fig: DE vs DEpred cost function for BSIM4 and HiSIM-HV models.
DEpred reaches the target 50% faster.

[Naveed Sherwani] Sam Zeloof (22-Year-Old) Builds #Chips in His Parents’ Garage Details: https://t.co/zuKlrSAQSc #semi https://t.co/veEAuBriOE

[Naveed Sherwani] Sam Zeloof (22-Year-Old) Builds #Chips in His Parents’ Garage Details: https://t.co/zuKlrSAQSc #semi https://t.co/veEAuBriOE

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Hardware-as-Code Part I: An Introduction

[https://t.co/MkLYpkhrG7 ] Hardware-as-Code Part I: An Introduction #hardware #fpga #semi https://t.co/4s9FdSbMtd

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#US-#Slovak #processor company in IPCEI bid

[https://t.co/MgFRrKmqCT] #US-#Slovak #processor company in IPCEI bid https://t.co/SViTuylPHv #semi https://t.co/ntjlULnU7J

— Wladek Grabinski (@wladek60) Jan 26, 2022

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India Semiconductor Mission is inviting applications for CEO, CTO, CFO

India Semiconductor Mission <ism-dic@gov.in> is inviting applications for CEO, CTO, CFO to facilitate the Semicon India journey #hiring #recruitmentdrive #semiconductor #semi #india #ceo #cto #cfo https://t.co/Q1wl7i8SlX

— Wladek Grabinski (@wladek60) Jan 20, 2022

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Over 400 exhibition pieces from Łukasiewicz-IMiF have been given to the National Museum of Technology in Warsaw

Over 400 exhibition pieces from Łukasiewicz – IMiF have been given to the National Museum of Technology in Warsaw and you are invited to the #museum🏛️! #exhibition #technology #science #semi https://t.co/Os6AXL4W9B

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[paper] Metal-Oxide Memristor Compact Model

Eugeny Ryndin,Natalia Andreeva and Victor Luchinin

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

Micromachines 2022, 13(1), 98; Special Issue Amorphous Oxide Semiconductor-Based Memristive Devices and Thin-Film Transistors

DOI: 10.3390/mi13010098

  
* Electrotechnical University “LETI”, Saint Petersburg (RU)

Abstract The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

Fig: Structures of the memristors based on TiOx (a) and TiO2/Al2O3 (b) films.

Acknowledgements: This research was funded by the Ministry of Science and Higher Education of the Russian Federation, Grant No FSEE-2020-0013.

[paper] Pseudo-morphic PHEMT: Numerical Simulation Study

Khaouani Mohammed, Hamdoune Abdelkader, Guen Ahlam Bouazza, Kourdi Zakarya, Hichem Bencherif

An Improved Performance of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): 

Numerical Simulation Study

IC-AIRES 2021. Lecture Notes in Networks and Systems, vol 361. Springer

DOI: 10.1007/978-3-030-92038-8_80

1. Hassiba Benbouali, Chlef, Algeria

2. University of Abou-Bakr Belkaid, Tlemcen, Algeria
3. Center Exploitation Satellite Communications Agency of Space Oran, Algeria
4. University of Mostefa Benboulaid, Batna, Algeria 

Abstract: In this paper a 9nm T-shaped gate length, Pseudo-morphic High Electron Mobility Transistor (pHEMT AlGaN/AlN/GaN/AlGaN) is studied; we use TCAD software. DC, AC and RF performances assessment allow to exhibit interesting results such as a maximum drain current IDSmax=35mA at VGS=0V, a knee voltage Vknee=0.5V with ON-resistance Ron=0.8Ω-mm, a sub-threshold swing of 75mV/decade, a maximum transconductance value gm=160mS/mm, a DIBL of 36mV/V, a drain lag of 8.5%, a cut-off frequency of 110GHz, a maximum oscillation frequency of 800GHz, and very suitable breakdown voltage VBR of 53.1V. This device can be used in radar, high power and amplifier applications.

[paper] Compact Modelling of Si Nanowire/Nanosheet MOSFETs

A. Cerdeira¹, M. Estrada¹, and M. A. Pavanello²

On the compact modelling of Si nanowire and Si nanosheet MOSFETs

Semiconductor Science and Technology, vol. 37, no. 2, p. 025014, Jan. 2022.

DOI: 10.1088/1361-6641/ac45c0

   

1 Centro de lnvestigacién y de Estudios Avanzados del IPN, Mexico City, Mexico
2 Centro Universitario PEI, Sao Bernardo do Cainpo, Sao Paulo, Brazil

Abstract: In this paper, three-dimensional technology computer aided design simulations are used to show that the electron concentration, current density, and electric field distribution from the interface at the lateral channels and from the top channel to the centre of the silicon wire, in nanowire and nanosheet structures, are practically same. This characteristic makes it possible to consider that the total channel width for these structures is equal to the perimeter of the transistor sheet, allowing to extend of the application of the symmetric doped double-gate model (SDDGM) model to nanowires and nanosheets metal-oxide-semiconductor field effect transistors, with no need to include new parameters. The model SDDGM is validated for this application using several measured and simulated structures of nanowires and nanosheets transistors, with different aspect ratios of fin width and fin height, showing very good agreement between measured or simulated characteristics and modelled. SDDGM is encoded in Verilog-A language and implemented in SPICE circuit simulator.

Fig: a.) Normalized measured and modelled transfer characteristics of stacked transistor in the linear region at VDS=0.025V and in saturation region at VDS=0.75V; b.) Output characteristic and conductance at VGS=1V.

Acknowledgments: The authors are grateful to CEA—Leti for providing the exper- imental samples used in this paper. This work was supported by the CONACYT project 236887, CNPq, Sao Paulo Research Foundation (FAPESP) Grants 2015/ 1049 1-7 and 2019/ 15500- 5, and the IBM/STMicroelectronics/Leti Joint Development Alliance.

 

A new development method for flexible electronics

A new development method for flexible electronics https://t.co/TnLxEzxGrt #semi https://t.co/TzIHEsPxxd

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[paper] RTN of a 28-nm Cryogenic MOSFET

HeeBong Yang, Marcel Robitaille, Xuesong Chen, Hazem Elgabra, Lan Wei, Na Young Kim

Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

IEEE Electron Device Letters, vol. 43, no. 1, pp. 5-8, Jan. 2022

DOI: 10.1109/LED.2021.3132964.

  

* Institute for Quantum Computing, Waterloo Institute for Nanotechnology (CA)

Abstract: We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (< 100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.

Fig: (a) The trapping behaviors are illustrated with empty trap (solid line) and occupied trap (dashed line) across the hump area of the |ID| -|VGS| sweep. (b) The current power spectral density (PSD) of the discretized data with the 1/f2 PSD guideline in red.

Acknowledgment: J. Watt and C. Chen in Intel for samples, A. Malcolm for early work, and J.Baugh for helpful discussions are appreciated.

Future Horizons' Annual Semiconductor Industry Forecast Webinar

Registration Now Open

Will the current shortages continue through 2022? Find out the answer to this and other key questions at IFS2022, Future Horizons' Annual Semiconductor Industry Forecast Webinar:
https://www.futurehorizons.com/page/135/

When?  Tue 18 Jan 2022 - 3pm GMT (7am PST / 10am EST / 4pm CET / 12pm JST)

Where?  https://us02web.zoom.us/webinar/register/9316413197665/WN_qS4a7ZdmTzGZKJiT3_dpBA

Why?  We were the only analyst to correctly predicted 2021's supercycle and product shortages at last year's IFS event, based on our proven methodology and 55 plus years of direct industry experience, longer than any other analyst and most industry execs. Now in its 34th year, our experience and track record makes this a must-attend event for key decision makers in the semiconductor, electronics and all related industries. We pride ourselves on the integrity of our work and the rigour and discipline employed in everything we do, not least of which is our commitment to accurate and usable information. We are never afraid take a contrarian view, backed up by data and sound analytical process, which is why our industry forecasts have consistently proved both accurate and insightful, second to no-one. Find out what's in store for 2022 at IFS2022, Future Horizons' annual industry outlook webinar.

What You Will Learn
This one-hour broadcast will focus primarily on the semiconductor industry forecast and outlook for 2022, including:
• Valuable insight about the industry's future growth
• What causes cyclicality and the supply chain fundamentalities
• How demand will shift in the short and medium-term
• An understanding of the exposure, vulnerabilities, opportunities, losses and gains
• Data and analysis to inform resilient strategies and reimagine business models
•  Answers to questions like "When will the shortages end?" and "What will the likely repercussions be?"
Just like our live events, there will be ample opportunity to ask specific questions in advance, during and after the webinar.

Who Should Attend?
• All companies, small and large, from startups to established market leaders
• Key decision-makers engaged in the design, fabrication or supply of semiconductors
• Government organisations involved in trade and investment
• Those involved in investing or banking within the electronics industry
• Senior marketing executives planning future marketing strategy

Why Future Horizons?
We have been in the business of forecasting and analysing the semiconductor market for over 55 years and have been a trusted advisor to governments, investors and most of the top global semiconductor firms. Time and time again we have delivered sound advice and saved our clients time and money with our forensic and accurate analysis of the industry.

Book Your Seat Today (Spaces are limited)
https://us02web.zoom.us/webinar/register/3616293135785/WN_9dsYHWvMTpaUAVf1cEIV3A

For a small investment of £150 plus £30 UK VAT you will gain accurate industry insight to make good strategic decisions in these uncertain times
• Discount available for 3 or more attendees from the same company/organisation
• Site license option for unlimited company participation
• Can't attend? Order the webinar material only
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[paper] Ultrafast imaging of THz electric waveforms using quantum dots

Moritz B. Heindl, Nicholas Kirkwood, Tobias Lauster, Julia A. Lang, Markus Retsch, Paul Mulvaney and Georg Herink;

Ultrafast imaging of terahertz electric waveforms using quantum dots;

Light: Science & Applications; Vol. 11, No. 5 (2022)

DOI: 10.1038/s41377-021-00693-5

Abstract: Microscopic electric fields govern the majority of elementary excitations in condensed matter and drive electronics at frequencies approaching the Terahertz (THz) regime. However, only few imaging schemes are able to resolve sub-wavelength fields in the THz range, such as scanning-probe techniques, electro-optic sampling, and ultrafast electron microscopy. Still, intrinsic constraints on sample geometry, acquisition speed and field strength limit their applicability. Here, we harness the quantum-confined Stark-effect to encode ultrafast electric near-fields into colloidal quantum dot luminescence. Our approach, termed Quantum-probe Field Microscopy (QFIM), combines far-field imaging of visible photons with phase-resolved sampling of electric waveforms. By capturing ultrafast movies, we spatio-temporally resolve a Terahertz resonance inside a bowtie antenna and unveil the propagation of a Terahertz waveguide excitation deeply in the sub-wavelength regime. The demonstrated QFIM approach is compatible with strong-field excitation and sub-micrometer resolution introducing a direct route towards ultrafast field imaging of complex nanodevices in-operando.

Fig: Quantum-Probe Field Microscopy (QFIM): a.) Imaging of THz electric near-fields in a fluorescence microscope using quantum dot (QD) luminescence. The absorption of ultrashort visible sampling pulses (green) is modulated via the quantum-confined Stark effect in a layer of nanocrystals (red); b.) The THz-induced change in the QD band structure can increase the absorption and translates to enhanced luminescence emission, accessible by optical microscopy. The modulated fluorescence yield SQFIM = STHz−S0 encodes the instantaneous local electric field and snapshot images resolve the spatio-temporally evolution of the near-field waveform

Acknowledgements: We [the authors] thank J. Koehler and M. Lippitz for experimental equipment and valuable discussions. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) via project 403711541. T.L. acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research program (grant agreement no. 714968). N.K. and P.M. thank the ARC for support through grant CE170100026. Open Access funding enabled and organized by Projekt DEAL.

[paper] A Review of Sharp-Switching Band-Modulation Devices

Sorin Cristoloveanu¹, Joris Lacord², Sébastien Martinie², Carlos Navarro³, Francisco Gamiz³, Jing Wan⁴, Hassan El Dirani¹, Kyunghwa Lee¹ and Alexander Zaslavsky⁵

A Review of Sharp-Switching Band-Modulation Devices

Micromachines 2021, 12, 1540.

DOI: 10.3390/mi12121540

   
1 IMEP-LAHC, Université Grenoble Alpes (F)
2 CEA, LETI, MINATEC Campus (F)
3 CITIC-UGR, University of Granada (SP)
4 Fudan University, Shanghai (CN)
5 Brown University, Providence (US)

Abstract: This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.

Fig: Average subthreshold swing SS vs. normalized ION plot. 

Green points indicate CMOS-compatible materials.

Acknowledgements: The European authors are grateful for support from the EU project REMINDER (H2020-687931). Alexander Zaslavsky acknowledges the support of the U.S. National Science Foundation (award QII-TACS-1936221).

[book] Advanced ASM-HEMT Model for GaN HEMTs

Sourabh Khandelwal

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

A New Industry-Standard Compact Model 

for GaN-based Power and RF Circuit Design

DOI: 10.1007/978-3-030-77730-2

eBook ISBN: 978-3-030-77730-2

Describes in detail a new industry standard for GaN-based power and RF circuit design. Includes discussion of practical problems and their solutions in GaN device modeling. Covers both radio-frequency (RF) and power electronics application of GaN technology and describes SPICE modeling of both GaN RF and power devices.

Table of contents:

• Front Matter; pp. i-xv
• Gallium Nitride Semiconductor Devices; pp. 1-8
• Compact Modeling; pp. 9-19
• Introduction to ASM-HEMT Compact Model; pp. 21-31
• Core Formulations in ASM-HEMT Model; pp. 33-45
• Non-ideal Effects in Device Current and Their Modeling; pp. 47-62
• Trapping Models; pp. 63-81
• Non-Ideal Effects in GaN Capacitances and Their Modeling; pp. 83-100
• Gate Current Model; pp. 101-113
• Effect of Ambient Temperature on GaN Device; pp. 115-124
• Noise Models; pp. 125-130
• Parameter Extraction in ASM-HEMT Model; pp. 131-150
• Advance Simulations with ASM-HEMT Model; pp. 153-174
• Resources for ASM-HEMT Model Users; pp. 175-175
• Back Matter; pp. 175-188

About the author:

Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University, Sydney. He is the lead developer of ASM--HEMT compact model, which is a new industry standard compact model for GaN RF and power devices. Earlier to this role, Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California, Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design.

[https://t.co/vKeanjzJ3k] Global chip shortage; Is engineer shortfall the next big problem? #semi #engineers #electronics #chips #design https://t.co/0EZI1EVmDv

[https://t.co/vKeanjzJ3k] Global chip shortage; Is engineer shortfall the next big problem? #semi #engineers #electronics #chips #design https://t.co/0EZI1EVmDv

— Wladek Grabinski (@wladek60) Jan 4, 2022

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