Oct 29, 2026

[paper] Logarithmic Power Detector

Patrick Fath and Harald Pretl
A 44-GHz Logarithmic Power Detector with 62 dB Dynamic Range and –56 dBm Sensitivity 
in 130-nm SiGe BiCMOS Using Open-Source EDA
IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) 
Fukuoka, Japan, October 2026
 
Institute for Integrated Circuits and Quantum Computing, JKU Linz, Austria
 
Abstract: This paper presents a 44-GHz logarithmic RF power detector implemented in the open-source IHP SG13G2 130nm SiGe BiCMOS OpenPDK using exclusively open-source EDA tools. The proposed detector is based on a six-stage successive detection logarithmic video amplifier architecture with integrated square-law detectors, followed by a transimpedance amplifier and an output buffer. To achieve both low noise and high speed, two different limiting-amplifier topologies are employed within the successive detection logarithmic video amplifier, namely a low-noise differential common-emitter input stage and high-speed Cherry-Hooper stages. A tunable proportional-to-absolute-temperature constant-gm bias generator is used to reduce the temperature dependency of the amplifier gain, while duty-cycled operation is supported to lower the average power consumption. Post-layout simulations show a passband gain of 64 dB, a frequency range from 0.15 GHz to 44.7 GHz, a sensitivity of-56 dBm, and a dynamic range of 62 dB. In addition, RF stability is verified over the investigated frequency range, and the detector achieves an estimated video bandwidth of 114 MHz. The total power consumption is 95.7 mW in continuous operation and is reduced to 48.1 mW in duty-cycled operation. The active area is 0.43 mm^2, while the die size including pads is 1.4×1.2 mm^2. These results demonstrate that competitive wideband logarithmic RF power detectors extending into the mm-wave range can be realized using open-source design infrastructure.

Fig. (a) Transient response of the detector under duty-cycled operation, showing pon (dashed gray) and Vlog, out (solid blue). (b) Layout of the detector (1.4×1.2 mm^2) with the individual building blocks outlined 


[paper] Cryo 1T1R HfO2-Based RRAM

Emilio Pérez-Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez
Enabling Quantum-Compatible Nonvolatile Memory: Cryogenic Evaluation 
of 1T1R HfO2-Based RRAM From 300 to 1.5K
Advanced Electronic Materials 12, no. 19 (2026): e00798
DOI: 10.1002/aelm.202500798

ABSTRACT: To enable compact quantum computing systems, cryogenically compatible CMOS-based non-volatile memories are required. In this work, we investigate 1-transistor–1-resistor (1T1R) resistive random-access memory (RRAM) devices over an extended temperature range, including previously unexplored cryogenic regimes. To enhance storage density, we explore a multilevel-cell approach via multilevel programming. As temperature decreases, the low-resistance state (LRS) effective conductance increases, improving state separation but also leading to higher LRS currents and increased reset voltages required for reliable switching to the high-resistance state (HRS), resulting in incomplete filament rupture and a broader HRS distribution. Through independent characterization of the access nMOS transistor, we identify transistor temperature dependence as the dominant factor governing LRS evolution, while extraction of the intrinsic metal–insulator–metal (MIM) behavior reveals an opposite trend, with decreasing conductivity at lower temperatures. Based on these insights, we implement an optimized programming strategy for cryogenic operation by tuning the nMOS gate bias during set, reducing LRS currents, particularly in intermediate and high conductance states, while preserving state separation, narrowing the HRS distribution, and lowering reset voltages. Overall, this work establishes a robust and scalable approach for reliable 1T1R operation at cryogenic temperatures and provides a key step toward nonvolatile memory integration in quantum computing architectures.
FIG: a) Cryogenic setup used to characterize the RRAM devices under study, b) RRAM array containing a total of 32 1T1R devices individually addressable, and c) schematic description of the forming, set, and reset operations carried out during this work.

Acknowledgments: This work was financially supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Project 551916740.

[Innovation Showcase] European Reference Fab Blueprint at SEMICON Europa 2026


N. Herfurth, S. Reith, R. Scholz
From Pilot-Line Readiness to Trusted Deployment: A Cloneable Manufacturing Blueprint 
for European Semiconductor Resilience
SEMICON Europa 2026
Innovation Showcase (pre-recorded talk), Executive Forum, Hall C1
Friday, 13 November 2026, 11:15

1) IHP GmbH - Leibniz Institute for High Performance Microelectronics, Technology, Frankfurt/Oder, (D)
2) Hochschule Rhein Main, University of Applied Sciences and Arts, Wiesbaden (D)
 
The talk is presented by Anna Herfurth on behalf of the authors: Norbert Herfurth, Arnd Weber, Steffen Reith, Anna Herfurth, Rene Scholz, Wladek Grabinski and Torsten Grawunder. It is an independent concept, published through the HEP Alliance and supported by Swissbit AG and Hochschule RheinMain (RheinMain University of Applied Sciences). Version 1 (concept paper, executive summary and Q&A) is online, and Version 2 is in preparation, coming in the next weeks

Abstract: Europe’s semiconductor ecosystem faces a deployment gap. RTOs and pilot lines are essential for developing new technologies, but many security-, safety- and long-lifecycle applications require something different: stable, auditable and repeatable manufacturing capacity at mature nodes, combined with advanced packaging, test and traceability. This contribution presents the European Reference Fab concept as a non-commercial manufacturing blueprint to close that gap: a cloneable 300-mm infrastructure model for 130 nm with an optional evolution path to 65 nm, integrating front-end manufacturing, packaging, chiplet integration, test, open design enablement and auditable process and data flows.The news is not another pilot line or a single national flagship fab. The proposed Reference Fab is an industrial deployment architecture. It defines how mature process modules, open PDKs/ADKs, documented tool flows, traceability mechanisms, MPW and small-series access, and packaging/test capabilities can be combined into a governed manufacturing environment. Clone sites could be implemented as front-end lines, assembly/test hubs or combined facilities, depending on regional and sectoral needs.The concept addresses several bottlenecks in semiconductor adoption. First, it provides a trusted manufacturing route for defence, critical infrastructure, automotive, industrial, med-tech and aerospace applications that do not necessarily require leading-edge nodes but do require long-term availability, provenance and auditability. Second, it creates an industrial endpoint for RTO and pilot-line results, helping promising technologies move from readiness to deployment. Third, it lowers access barriers for SMEs, start-ups and system integrators through open design kits, harmonised design interfaces and fair MPW/small-series schemes. Fourth, it embeds smart-manufacturing principles such as MES-based traceability, inline metrology, SPC/ML-assisted control, documented audit trails and secure data flows from design through manufacturing and final test.The presentation will outline the core architecture of the Reference Fab, the rationale for the 130 nm to 65 nm pathway, the role of packaging-first system integration, and the mechanisms by which open design enablement, auditable manufacturing and workforce development can support trusted electronics, supply-chain resilience and European semiconductor competitiveness.

Biography: Dr.-Ing. Norbert Herfurth is a research group leader, programme coordinator and semiconductor technologist with more than ten years of experience at the interface of microelectronics research, collaborative R&D programmes, open-source chip design, failure analysis and semiconductor strategy. He currently leads the Diagnostics, Sensors & Emerging Modules group at IHP – Leibniz Institute for High Performance Microelectronics in Frankfurt (Oder), Germany, where he is responsible for building and managing a newly established interdisciplinary unit with activities in diagnostics, sensors, photonic and emerging module technologies.His work combines technical depth in semiconductor devices and failure analysis with strategic programme leadership. Before taking on his current group-leader role, he initiated, structured and coordinated several publicly funded collaborative R&D projects in the field of open-source microelectronics, open PDKs and trusted electronics. He has contributed to the development and positioning of Europe’s open-source chip-design ecosystem, including work around IHP’s open 130 nm PDK activities and European discussions on open-source EDA, design access and semiconductor sovereignty. Norbert Herfurth earned his doctorate in electrical engineering from Technische Universität Berlin, where his research focused on semiconductor devices and silicon-level failure analysis. During his academic work, he operated and developed advanced diagnostic and failure-analysis methods, including photon-emission microscopy, thermal and optical techniques, probing methods and cleanroom-based experimental workflows. Since 2024, he has also been a lecturer at Technische Universität Berlin for the course “Debug of Integrated Circuits on Silicon Level”, which combines IC debug, failure analysis and hands-on diagnostic methods. In addition to his technical work, he has extensive experience in consortium building, project governance and strategic technology communication. He has led or coordinated multiple BMBF-funded collaborative projects, developed R&D work programmes, managed milestone- and review-driven project structures and worked with partners from research organisations, SMEs, industry, funding bodies and public-sector stakeholders. His current activities include the development of strategic concepts for open and trustworthy semiconductor ecosystems, especially where design enablement, manufacturing access, packaging, test, traceability and trusted electronics intersect. Norbert Herfurth is one of the contributors to the European Reference Fab / Transparent Reference Fab concept, a proposed open, cloneable manufacturing blueprint for trustworthy mature-node semiconductor production in Europe. In this context, he focuses on the connection between open design enablement, auditable manufacturing, trusted electronics, chiplet-aware system integration and the transition from pilot-line readiness to industrial deployment. He is also a founding member of the VDE ITG expert group on trustworthy electronics. His professional interest lies in translating complex semiconductor technology topics into actionable strategies for research, industry and policy stakeholders. This includes open PDKs and open EDA, trusted manufacturing, semiconductor resilience, system-level integration, failure analysis, photonic and electronic diagnostics, and the role of public-interest infrastructure in strengthening Europe’s semiconductor ecosystem.

[workshop] Open Source Analog Chip Design

AT-C³ Training: Introduction to Open Source Analog Chip Design
SILICON ALPS Cluster
24-25 November 2026 
TU Graz, Campus Inffeldgasse
Inffeldgasse 33, 8010 Graz, Austria


This workshop is an excellent opportunity for engineers, researchers, and students who want to gain practical experience in open-source analog chip design and contribute to the emerging open-source semiconductor ecosystem.

About the Training
AT-C³ is launching one of its first hands-on training events, focused on a question that many electronic engineers are asking today: Can an analog integrated circuit be designed, simulated, laid out, and verified using only open-source EDA tools? During this two-day workshop, hosted by Symbiotic EDA, participants will answer this question through practical, hands-on experience. The training guides attendees through the complete analog IC design flow, from schematic capture to a verified physical layout, using modern open-source design tools.

Why Attend?
  • Learn the complete open-source analog IC design workflow
  • Gain hands-on experience with professional-grade EDA tools
  • Explore schematic design, simulation, layout, and verification
  • Network with engineers, researchers, and students interested in open-source chip design
  • Discover the growing ecosystem around open-source silicon development
Registration Free of Charge


Oct 28, 2026

[paper] Cryo MOSFET Gate Capacitance

Sadık İlik, Masoud Babaie, Andrei Vladimirescu and Fabio Sebastiano
Characterization and Modeling of MOSFET Gate Capacitance Under Cryogenic Operation
IEEE Journal of the Electron Devices Society (2026)
DOI 10.1109/JEDS.2026.3745897

1 Delft University of Technology, 2628 CJ Delft (NL)
2 Qutech, 2628 CJ Delft (NL)
3 University of California at Berkeley, CA (US)

Abstract—The modeling of incomplete ionization is a key element for a reliable and scalable cryogenic transistor model. Despite the increasing interest in cryo-CMOS modeling, capacitance–voltage (CV) characteristics remain relatively unexplored, even though they are less sensitive to secondary effects, such as mobility variations, than DC measurements. While the experimental data in the literature are few and limited, a clear discrepancy is observed between model predictions and capacitance–voltage (CV) measurements. To address these limitations, this paper presents a new, accurate, and scalable capacitance model including an incomplete ionization model that predicts cryogenic behavior more accurately than existing models, along with a corresponding charge model derived from the proposed formulation. The model accurately reproduces all CV features, including the field-dependent ionization–induced flatband voltage dip, the depletion-region capacitance, the trap related threshold voltage humps, and the inversion region. Extensive CV characterizations over multiple device geometries, frequencies, AC excitation voltages, and temperatures are finally used to validate the model.
Fig: Inversion capacitance at 4.2 K for PMOS (a)–(d) and NMOS (e)–(h) devices with varying geometries. In (a), (b), (d), (e), (f), and (h), identical small-sized devices are connected in parallel to enable characterization with sufficient SNR.