[mos-ak] //ICMC 2027// Conference committees: Call for Participation

Subject: [CMC] ICMC 2027 Conference committees: Call for Participation

Join the ICMC 2027 Organizing Team!

ICMC 2026 was a great success, thank you to everyone who contributed! We’re excited to announce that preparations are already underway for the next edition on July 15–16, 2027 in San Jose, California. For ICMC information and Photo Gallery, go to  https://si2-icmc.org.

We are currently seeking enthusiastic volunteers to join the ICMC 2027 conference committees. If you're interested in helping shape next year’s event, please complete this interest survey:

https://survey.zohopublic.com/zs/edC25U
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Summary of Committee Responsibilities:

• Organizing Committee: Oversees the overall planning and execution of the yearly edition of the ICMC Conference. Coordinates among sub-committees and maintains regular communication to track progress and confirm major decisions.
• Technical Program Committee: Defines the major topics and focus areas and develops the technical program for the conference, creates the call for papers, and defines, organizes and oversees the paper review procedures.
• Publicity Committee: Develops and implements the marketing plan to promote the conference and increase its visibility.

[conference] IRPhE' 2026 Sept. 28-30 2026, Yerevan

International Conference on Microwave & THz Technologies, Wireless Communications
and OptoElectronics

IRPhE' 2026 

<http://www.irphe.am/?q=conference>  

September 28-30 2026, Yerevan (Armenia)

The upcoming IRPhE' 2026 Conferences is dedicated to 90-years jubilee of academician Radik Martirosyan

IRPhE’ 2026 Main R&D Topics:

• Microwave devices, antennas, propagations and remote sensing
• THz technique, spectroscopy and applications
• Microwave Photonics
• Wireless communications and related information technologies
• Alternative semiconductor and dielectric materials, electronic and optoelectronic devices

Submission Information:

• Original one page abstracts will be accepted for review in Word and PDF formats
• Abstract submission deadline: August 31, 2026
• The authors of accepted abstracts will be invited to submit 4-6 page papers for publication in the Conference Proceedings. Final full paper submission deadline: October 10, 2026
• Best papers selected through peer-review process will be invited for publication in the special issue of a Scopus indexed journal publishing interdisciplinary research between electronics and systems, high speed technology, photonics and electronics (IET Digital Library and IEEE Xplore). Abstracts and papers must be submitted via email: irphe2024@gmail.com

Registration Information:

• For each paper independently, at least one co-author is required to register for the conference
• Registration deadline: September 15, 2026
• In-person registration fee - 200 USD
• virtual registration fee - 100 USD
• registration fee for local participants - 10000 AMD

Organized by:

Higher Education and Science Committee

National Academy of Sciences

Yerevan State University

[EDS Webinar] Emerging Technologies at ESREF 2026

Discover Emerging Tech Trends

IEEE EDS Webinar Series Emerging Technologies at ESREF 2026 Sponsored By: The IEEE Electron Devices Society Educational Activities Committee and Device Reliability Physics Committee The EDS Webinar on Emerging Technologies, held within ESREF 2026 at TU Wien in Vienna, will address recent developments and reliability challenges in emerging device technologies. Topics include 2D FETs, advanced MOS gate stacks, emerging and resistive-switching memories, and memristive devices for neuromorphic computing, covering aspects from device-level reliability and defect engineering to CMOS integration and system-level considerations. Date: 21 September 2026  Time: 9:30 AM - 12:20 PM EDT / 3:30 - 6:20 PM CEST (Time Zone Conversion Tool) Presenters: Dr. Erika Covi, Dr. Saptarshi Das, Dr. Jacopo Franco, Dr. Cristian Zambelli, Dr. Lambert Alff More Information Here This message is being sent on behalf of the EDS Vice President of Educational Activities, P Susthitha Menon As part of our commitment to advancing the vision and mission of the Electron Devices Society, we are pleased to invite you to attend our next scheduled webinar. All participants will receive virtual meeting details prior to the event. We sincerely hope that you can join us for this event. Register to Join Virtually

[map] Poland: Emerging Semiconductor Hub

[Map photo] Karolina Falkenberg | Business Development Expert | Lodz Special Economic Zone

Mas illustrating Poland’s semiconductor ecosystem was presented at SEMICON Taiwan 2026 in Taipei. The Polish national stand was officially opened by Michał Jaros, Secretary of State at the Ministry of Development and Technology. The Lodz Special Economic Zone was represented together with Jacek Podgórski and Janusz Woźny from the Lodz University of Technology, highlighting the investment and research potential of Lodz and Central Poland.

[paper] a-IGZO Thin-Film Transistor Compact Model

Seunghyun Son, Taejun Ha, Taeyoung Nam, Yoonyoung Chung, Sunmean Kim

Bayesian Optimization–Reinforcement Learning Hybrid Framework for a-IGZO Thin-Film Transistor Compact Model Parameter Extraction in 2T0C Dynamic Random Access Memory Applications

Advanced Intelligent Systems (2026): e70525

1.) School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, Republic of Korea

2.) Department of Electrical Engineering, POSTECH, Pohang, Republic of Korea

Abstract: In this work, we propose a two-stage BO–RL hybrid framework for compact model parameter extraction of a-IGZO TFTs. The strategy combines the complementary strengths of Bayesian optimization (BO) and reinforcement learning (RL): BO performs global exploration and provides an optimized starting point, and RL conducts local refinement within a reduced search domain. Experimental results demonstrate that the hybrid method substantially improves extraction efficiency while maintaining fitting accuracy statistically comparable to that of BO or RL alone. Across five independent random seeds under an equal 4000-simulation budget, the fitting quality of BO–RL is statistically comparable to that of BO, while RL alone remains an order of magnitude less sample-efficient; the RL refinement stage requires no surrogate refitting, so its per-simulation cost remains low and constant, and the framework attains comparable fitting quality without the growing optimization overhead of BO. We validate the framework using an a-IGZO TFT compact model, showing good agreement between SPICE-simulated and measured C–V/I–V curves with the extracted parameters. Circuit-level transient simulations of an a-IGZO 2T0C cell demonstrate write/hold operations with a retention time of 172 s.

FIG: Schematic of a-IGZO TFT structure and fabrication process;

SPICE (lines) simulation and experimental data (points) comparison

Acknowledgments: This paper was a result of the research project supported by SK Hynix Inc.

Funding MDUO004A