Jul 3, 2026

[mos-ak] [C4P] Submissions Now Open for IEDM 2026

Submit a Paper

Meeting Info

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Submissions Now Open

Deadline: July 16, 2026

The IEEE International Electron Devices Meeting Committee is seeking paper submissions for the 2026 IEDM Conference, themed “Devices at the Hearth of the Intelligence Revolution” We invite contributions from various areas of expertise (view all suggested topics). 

  • Format: Papers must be submitted electronically in a PDF format, compatible with IEEE Xplore
  • Guidelines: Before preparing your paper, please review the paper preparation and submission guidelines on our website where you’ll find a paper template, sample paper and additional preparation details.
  • Presentation: Accepted papers MUST be presented in person at the conference AND authors must submit a pre-recording of their presentation for OnDemand registrants.
Call for Papers Info

Student Papers

We highly encourage student submissions. Papers presented by students based on their own work are eligible for the Best Student Paper Award. To be considered, the paper must be identified as a student paper during submission. The award will be judged on the paper's quality and its presentation, which must be delivered by the student. The winner of the award will be announced and honored at IEDM 2027.

MEETING HIGHLIGHTS

IEDM is the world’s preeminent forum for reporting technological breakthroughs in semiconductor and electronic device technology, design, manufacturing, physics, and modeling.


The conference will feature:

  • Three plenary presentations 
  • Special focus sessions 
  • Evening panel discussions 
  • Tutorial sessions
  • Short Courses 


Mark your calendar for December 12-16, 2026, and join us in San Francisco, CA.

Attendee: 

For more information

IEDM Online

Email: info@ieee-iedm.org

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IEDM | Canfield Event Management, LLC | +1 972 521-9902 | ieee-iedm@cemllc.com

IEDM | 445 Hoes Lane | Piscataway, NJ 08854 US

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Jun 20, 2026

[paper] SPICE-Q Quantum Chip Production

Ling Qiao Cai1,2, Bin Yang1,2, Fumin Luo1,2, Chang Liu1,2, WeiGui Guo1,2, GuoRong Zhang1,2, XueFei Liu1,2, Qinglang Guo1,2 and Bin Wu
SPICE-Q and Large-Scale Quantum Chip Production
[quant-ph] 16 Jun 2026 
arXiv:2606.17907v1  

1.) Yangtze Delta Industrial Innovation Center of Quantum Science and Technology, Suzhou, (CN)
2.) China Academy of Electronics and Information Technology, No. 11 Shuangyuan Road, Shijingshan District, Beijing, (CN)


Abstract: The historical analogy with SPICE is based on foundational reports, numerical methods, and experience from integrated circuit design. The requirements for quantum computing and scaling refer to established work in the field. The background on superconducting qubits, transmons, circuit quantum electrodynamics, microwave networks, material loss, and three‑dimensional interconnects draw from widely recognized literature. The background on parameter extraction, simulation frameworks, and manufacturability is informed by recent research and practical developments.

Table of Contents (Top‑Level Sections)
  1. Abstract ... p. 4
  2. The Emergence of SPICE and Large‑Scale Classical Circuits
    and Its Implications for Quantum Chips ... p. 5
  3. SPICE‑Q Model Composition ... p. 24
  4. SPICE‑Q Device‑Level Models ... p. 40
  5. Standardized Manufacturing System ... p. 53
  6. Integrating SPICE‑Q with Process Models ... p. 66
  7. Design‑Technology Co‑Optimization (DTCO) ... p. 71
  8. Large‑Scale Production Examples and Design Scenarios ... p. 75
  9. Engineering Transition and Large‑Scale Quantum Chips ... p. 80
  10. Summary ... p. 84
  11. Acknowledgment ... p. 87
  12. Reference ... p. 87
  13. Appendix A ... p. 90
Acknowledgment The authors thank Jun Ye for helpful assistance. The authors also acknowledge the use
of AI tools for translation assistance and auxiliary text generation.


Jun 16, 2026

[paper] 130-nm CMOS tunnel p-bit cell

Ju-Young Yoon, Nuno Caçoilo, Advait Madhavan, Jabez J. McClelland, Shun Kanai, Hideo Ohno, Shunsuke Fukami, and William A. Borders, 
"130-nm CMOS-integrated superparamagnetic tunnel junction-based p-bit," 
in IEEE Electron Device Letters, 
DOI: 10.1109/LED.2026.3696800

Abstract: Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on superparamagnetic tunnel junctions (sMTJs) as its source of randomness. A challenging threshold to cross for scaling sMTJ-based p-bit systems is integration of sMTJs with CMOS technology. In this work, we present experimental results of a p-bit unit cell using sMTJs integrated with 130 nm CMOS technology and demonstrate that the sMTJ’s resistance fluctuations can generate a corresponding fluctuating digital output voltage which is tunable via the input voltage. These findings establish the feasibility of CMOS-compatible, sMTJ-based probabilistic circuits and mark a key step toward scalable hardware for real-world probabilistic computing applications. 


FIG: (a) Circuit diagram of the spintronic p-bit; b) Schematic cross-sectional structure of the spintronic p-bit. Transistors and lower interconnect layers were fabricated at SkyWater, followed by fabrication of the spintronic devices at Uni. Tohoku. (c,d) Cross-sectional and plan-view electron microscope images of the spintronic device designed to exhibit stochastic fluctuations.

Acknowledgements: This work was made possible by the NIST-led Nanotechnology Xccelerator program that distributes open-source circuit designs for integration of novel technologies on CMOS.

RevEDA v0.9.0 Has Arrived

ChipFoundry September Shuttle