May 23, 2023
[paper] GaN HEMTs: Past, development, and future
May 22, 2023
Postdoc position in GaN power devices
REF:
Apr 27, 2022
[paper] Effect of doping on Al2O3/GaN MOS capacitance
a CEA, LETI, Grenoble (Fermi)
b IMEP-LAHC Minatec, Grenoble(FR)
Apr 7, 2022
[webinar] Power WBG Semiconductor Technology Opportunities
You will additionally learn about:
- the lateral and vertical power device configurations that will be analyzed in the context of bidirectional switching
- specific applications and needs for bidirectional switches
- key topologies, enabled by bidirectional switches
- PowerAmerica’s work to accelerate WBG power electronics commercialization
Mar 23, 2022
[paper] Review of AlGaN/GaN HEMTs Based Devices
Feb 3, 2022
[paper] Transistor Modelling for mm-Wave Technology Pathfinding
* imec, Kapeldreef 75, 3001 Leuven, Belgium
1 also with Vrije Universiteit Brussels, 1050 Brussels, Belgium
2 also with UCLouvain, Louvain-la-Neuve, Belgium
Jan 12, 2022
[paper] Pseudo-morphic PHEMT: Numerical Simulation Study
3. Center Exploitation Satellite Communications Agency of Space Oran, Algeria
4. University of Mostefa Benboulaid, Batna, Algeria
Jan 5, 2022
[book] Advanced ASM-HEMT Model for GaN HEMTs
Table of contents:
- Front Matter; pp. i-xv
- Gallium Nitride Semiconductor Devices; pp. 1-8
- Compact Modeling; pp. 9-19
- Introduction to ASM-HEMT Compact Model; pp. 21-31
- Core Formulations in ASM-HEMT Model; pp. 33-45
- Non-ideal Effects in Device Current and Their Modeling; pp. 47-62
- Trapping Models; pp. 63-81
- Non-Ideal Effects in GaN Capacitances and Their Modeling; pp. 83-100
- Gate Current Model; pp. 101-113
- Effect of Ambient Temperature on GaN Device; pp. 115-124
- Noise Models; pp. 125-130
- Parameter Extraction in ASM-HEMT Model; pp. 131-150
- Advance Simulations with ASM-HEMT Model; pp. 153-174
- Resources for ASM-HEMT Model Users; pp. 175-175
- Back Matter; pp. 175-188
Apr 20, 2021
[papers] Compact Modeling
[1] Nicolo Zagni; Simulation and Modeling Methods for Predicting Performance and Reliability Limits of 21st-Century Electronics; PhD Thesis, Universita Degli Estudi Di Modena e Reggio Emilia; Anno Accademico 2019–2020 (CICLO XXXIII)
Abstract: In recent years, a plethora of novel semiconductor devices have started emerging as worthy heirs of Silicon-based transistors – giving rise to the ’post-Moore’ era. Traditional electronics is mostly based on Si devices, – from logic to memory, to high frequency/power and sensing applications – but this paradigm is changing thanks to the developments in different fields ranging from physics and semiconductor materials, to processing techniques and computing architectures. In this hectic new scenario, before even considering a new technology as a replacement of the existing ones, the limiting factors to its performance and reliability need to be well-understood and engineered for. In this sense, simulations and physics-based modeling represent critical tools to make sure that newly conceived technologies stand up to the requirements of 21st century electronics. In this thesis, state-of-the-art simulation and compact modeling tools are exploited to analyze the performance and reliability limits of several emerging technologies. Specifically, this dissertation is focused on four application scenarios and the relative candidate technologies that aim to providing enhanced performance/reliability compared to Si-based counterparts. These are: i) III-V MOSFETs for logic/digital circuits, ii) resistive-RAMs and ferroelectric-FETs for non-volatile memory and in-memory computing, iii) GaN-based high-speed transistors for power applications, and iv) negative capacitance transistors for biosensing.
[2] G. Maroli, A. Fontana, S. M. Pazos, F. Palumbo and P. Julián, "A Geometric Modeling Approach for Flexible, Printed Square Planar Inductors under Stretch," 2021 Argentine Conference on Electronics (CAE), Bahia Blanca, Argentina, 2021, pp. 61-66, DOI: 10.1109/CAE51562.2021.9397568.
Abstract: In this work a compact model for square planar inductors printed on flexible substrate is proposed. The approach considers the deformation of the metal traces of square spiral inductors when the substrate is subjected to physical stretch. The model considers a typical pi-network for the device, where each component is calculated for different stretching values adapting widely accepted models on the literature for the total inductance, the AC resistance and the ground coupling and inter-wounding capacitances. Model results are contrasted to 3D full electromagnetic wave simulations under parametric sweeps of the dimensions calculated under stretch. Results show good agreement within a 20 % stretch up to the first resonance frequency of the structure. The model can prove useful for the optimization of component design for printed applications on flexible substrates.
[3] H. Kikuchihara et al., "Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching," 2021 International Symposium on Devices, Circuits and Systems (ISDCS), Higashihiroshima, Japan, 2021, pp. 1-4, DOI: 10.1109/ISDCS52006.2021.9397904.
Abstract: Demands for higher-voltage MOSFET application are increasing, for which a Super-Junction MOSFET, sustaining the voltages in the range of 500V, has been developed based on the trench-type structure. Due to the huge bias applied, a new leakage-current type is induced during switching, which causes a switching-power-loss increase. Creating a compact model for circuit design, which includes this additional leakage current, is the purpose of the present development. The model describes the depletion-width variation, caused during the switching-on of the device, with the use of the internal node potential, determined accurately by iteration. It is verified, that the new compact model can accurately predict the device performances for different device structures. This capability can be used for device optimization to realize low-power circuitry.
Apr 19, 2021
[Photos] MOS-AK LADEC Mexico April 18, 2021
Group Photo
Mar 15, 2021
[paper] 3D integrated GaN/RF-SOI SPST switch
Jan 12, 2021
[paper] Modeling Power GaN-HEMTs in SPICE
Nov 30, 2020
[paper] The advantages of p-GaN channel/Al2O3 gate insulator
1 Department of Information Engineering, University of Padova, via Gradenigo 6/b, 35131 Padova, Italy
2 Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universitat Braunschweig, Langer Kamp 6a/b, 38106 Braunschweig, Germany
Oct 21, 2020
[Survey] Power Amplifiers Performance 2000-Present
Fifth web release on 2020/10/15: "PA_Survey_v5". This version-5 dataset includes PAs/transmitters from 500MHz to 1.5 THz in Bulk/SOI CMOS, SiGe, LDMOS, InP, GaN, GaAs technologies. The dataset contains total 3207 data points with over 1200 data points for CMOS, SiGe PAs and over 1500 data points for GaN, GaAs, InP PAs.
We have added sub-THz/THz power/signal generation circuits from 15GHz to 1.5THz, including PAs, fundamenal/harmonic oscillators, and frequency multipliers, to support the emerging research on beyond-5G/6G applications.
The file "PA_Survey_v5" is the version-5 dataset that includes ALL the reported PA/transmitter data since 2000 over frequency and various technologies. It also includes summary plots on CW Psat vs. Carrier Frequency for different technologies, peak PAE vs. CW Psat at different frequencies, and average PAE vs. average Pout for high-order complex modulations.
What is new in version-5 release beyond the version-4 release? 500MHz to 1.5 THz Power Amplifier designs and sub-THz/THz power/signal generation circuits published between 02/2020 and 10/2020.
- Cite this PA survey: Hua Wang, Tzu-Yuan Huang, Naga Sasikanth Mannem, Jeongseok Lee, Edgar Garay, David Munzer, Edward Liu, Yuqi Liu, Bryan Lin, Mohamed Eleraky, Sensen Li, Fei Wang, Amr S. Ahmed, Christopher Snyder, Sanghoon Lee, Huy Thong Nguyen, and Michael Edward Duffy Smith, "Power Amplifiers Performance Survey 2000-Present," [Online]. Available: https://gems.ece.gatech.edu/PA_survey.html
- Acknowledgement: We would like to sincerely thank many of our friends and colleagues for their helpful suggestions and insightful discussions.
- Feedback and Suggestions: We welcome your feedback and suggestions, including the ways to interpret and present the data. In addition, although we try to be as inclusive as possible when collecting these published data, it is certainly possible that we may miss some representative PA designs. Please feel free to send us feedback, suggestions, or missing PA papers.
- Contact: Please contact us through poweramplifiers.survey at gmail dot com. Do not use my gatech email address, since I may very likely miss your email.
- Source for this data collection: We focus on peer-reviewed and publicly accessible publications that are typical forums for PAs, including IEEE ISSCC, JSSC, RFIC, VLSI, CICC, ESSCIRC, IMS, T-MTT, TCAS, BCTM/CSICS (BCICTS in the future), APMC, EuMC, and MWCL. We also focus on public product datasheets on PAs/transmitters.
Oct 15, 2020
[paper] Scaled GaN-HEMT Large-Signal Model Based on EM Simulation
2Wavice Inc., Hwaseong-si 18449, Korea
3Agency for Defense Development, Daejeon 34186, Korea
Acknowledgement: The research reported in this work has been supported by ADD (Agency of Defense Development) of Korea under an R&D program (UC170025FD).
[webinar] GaN HEMT Devices Characterization Using ASM-HEMT Model
Oct 12, 2020
[paper] Compact Modeling of GaN HEMTs
Jun 16, 2020
[slides] (Ultra-) Wide-Bandgap Devices
Center for Power Electronics Systems, Virginia Tech
The seminar presentation is now available on our IEEE EDS SCV-SF webpage:
http://site.ieee.org/scv-eds/files/2020/06/SCV_SF_EDS_Yuhao_Zhang_excerpt.pdf
More information at the IEEE EDS Santa Clara Valley-San Francisco Chapter Home Page. Subscribe or Invite your friends to sign up for our mailing list and get to hear about exciting electron-device relevant talks. We, EDS SCV-SF, promise no spam and try to minimize email. You can (un)subscribe easily.
Jun 11, 2020
[paper] GaN/AlGaN 2DEGs grown on bulk GaN
2Max-Planck-Institute for Chemical Physics of Solids, Dresden (D)
3Institute of Solid State Physics RAS, Moscow (RU)
4National Research University Higher School of Economics, Moscow (RU)
5Institute of Semiconductors and Microsystems, TU Dresden, Dresden (D)
Nov 27, 2019
Open PhD/PostDoc positions at the University of Pisa
I would be very grateful if you could forward this information to whom you think could be interested in applying.
Expressions of interest must be submitted by email, together with a CV and contact information by 31 Dec 2019 to giuseppe.iannaccone@unipi.it.
Prof. Giuseppe Iannaccone
giuseppe.iannaccone@unipi.it