Showing posts with label power devices. Show all posts
Showing posts with label power devices. Show all posts

Jan 15, 2024

[C4P] MIXDES 2024

The MIXDES conference series started in Dębe near Warsaw in 1994 and has been organized yearly in the most interesting Polish cities. In 2024 we would like to continue the tradition of inviting you to the most attractive places in Poland and the conference will take place in Gdańsk between June 27-29, 2024
In short period of time the conference has become an important event in the Central Europe allowing to discuss the recent research progress in the field of design, modelling, simulation, testing and manufacturing in various areas such as micro- and nanoelectronics, semiconductors, sensors, actuators and power devices as well as their interdisciplinary applications.

The topics of the MIXDES 2024 Conference include:
  • Design of Integrated Circuits and Microsystems
    Design methodologies. Digital and analog synthesis. Hardware-software co-design. Reconfigurable hardware. Hardware description languages. Intellectual property-based design. Design reuse.
  • Thermal Issues in Microelectronics
    Thermal and electro-thermal modelling, simulation methods and tools. Thermal mapping. Thermal protection circuits. 
  • Analysis and Modelling of ICs and Microsystems
    Simulation methods and algorithms. Behavioral modelling with VHDL-AMS and other advanced modelling languages. Microsystems modelling. Model reduction. Parameter identification.
  • Microelectronics Technology and Packaging
    New microelectronic technologies. Packaging. Sensors and actuators.
  • Testing and Reliability
    Design for testability and manufacturability. Measurement instruments and techniques. 
  • Power Electronics
    Design, manufacturing, and simulation of power semiconductor devices. Hybrid and monolithic Smart Power circuits. Power integration.
  • Signal Processing
    Digital and analogue filters, telecommunication circuits. Neural networks. Artificial intelligence. Fuzzy logic. Low voltage and low power solutions.
  • Embedded Systems
    Design, verification and applications.
  • Medical Applications
    Medical and biotechnology applications. Biometrics. Thermography in medicine
Call for Papers and Contributions
A call is made for papers, contributions and other conference activities on the topics mentioned above. Full papers should be submitted till March 1, 2024 - only in electronic form (MS Word, RTF, Open Office Writer, LaTeX, together with a generated PDF file).

The paper submission form and required format is available on our Web page. Authors are asked to indicate the topic into which their papers fall. The papers will be reviewed by at least two referees from the International Programme Committee. The papers will be published in the proceedings from the author's electronic submission.

Tutorials and Special Sessions - Call for Proposals
Several tutorials/special sessions will be held prior to the conference. Authors willing to propose a tutorial at MIXDES 2024 are invited to send a proposal to the Organizing Committee. The proposal should consist of a three-page summary including tutorial title, name and affiliation of the lecturer(s), tutorial objectives and audience, topical outline and provisional schedule of the tutorial.

Jan 5, 2022

[book] Advanced ASM-HEMT Model for GaN HEMTs

Sourabh Khandelwal
Advanced SPICE Model for GaN HEMTs (ASM-HEMT)
A New Industry-Standard Compact Model 
for GaN-based Power and RF Circuit Design
DOI: 10.1007/978-3-030-77730-2
eBook ISBN: 978-3-030-77730-2

Describes in detail a new industry standard for GaN-based power and RF circuit design. Includes discussion of practical problems and their solutions in GaN device modeling. Covers both radio-frequency (RF) and power electronics application of GaN technology and describes SPICE modeling of both GaN RF and power devices.


Table of contents:

  • Front Matter; pp. i-xv
  • Gallium Nitride Semiconductor Devices; pp. 1-8
  • Compact Modeling; pp. 9-19
  • Introduction to ASM-HEMT Compact Model; pp. 21-31
  • Core Formulations in ASM-HEMT Model; pp. 33-45
  • Non-ideal Effects in Device Current and Their Modeling; pp. 47-62
  • Trapping Models; pp. 63-81
  • Non-Ideal Effects in GaN Capacitances and Their Modeling; pp. 83-100
  • Gate Current Model; pp. 101-113
  • Effect of Ambient Temperature on GaN Device; pp. 115-124
  • Noise Models; pp. 125-130
  • Parameter Extraction in ASM-HEMT Model; pp. 131-150
  • Advance Simulations with ASM-HEMT Model; pp. 153-174
  • Resources for ASM-HEMT Model Users; pp. 175-175
  • Back Matter; pp. 175-188

About the author:
Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University, Sydney. He is the lead developer of ASM--HEMT compact model, which is a new industry standard compact model for GaN RF and power devices. Earlier to this role, Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California, Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design.

Jun 14, 2019

[book] POWER/HVMOS Devices Compact Modeling


 


POWER/HVMOS Devices Compact Modeling 
Wladyslaw Grabinski and Thomas Gneiting
Editors

Book 7 Citations;   119 Readers;   2 Reviews;   6k+ Downloads
DOI: 10.1007/978-90-481-3046-7

Since its online publication on Jun 10, 2010, there have been a total of 6452 chapter downloads for your eBook on SpringerLink. The table below shows the download figures for the last years:

YearUsage
2018
656
2017
766
2016
843
2015
912
2014
1333
2013
658
2012
420
2011
401
2010
463

Apr 5, 2016

MNE&MS 2016: Seminar Announcement

MNE&MS 2016
Seminar Announcement

The 8th traditional seminar “Computer simulation and design of micro-and nanoelectronics and micro-electromechanical systems” (MNE&MS 2016), organized by the Nanotechnology Center “OrelNano” and Physics Department will take place at the Orel State University after Ivan Turgenev, 29 Naugorskoe Shosse (in 212 Auditorium), Orel, Russia, on April 29th 2016 from 10am to 5pm.

The main objective of the MNE&MS 2016 is to allow regional electronics industry companies and Universities present results in research and development in micro-and nanoelectronics, power electronics, and microelectromechanical systems (MEMS) to potential customers, interested professionals, and students. Hence, the scope of seminar covers the most of Key Enabling Technologies (KETs), that is the basis for innovations in a range of products across all industrial sectors.

The Seminar also aims to introduce to Companies and Universities the latest developments in the electronics development automation (EDA), in particular in technology computer aided design (TCAD) and in compact modeling. Seminar includes session with oral presentations, poster session and an Exhibition of products of participating companies.

Selected papers will be recommended for publication in journals “Fundamental and Applied Problems of Technics and Technology” and “Information Systems and Technologies”. In addition, selected papers will be recommended for publication in proceedings of “Nanosystems, nanomaterials and nanotechnologies” of the XIV International Scientific Practical Internet – Conference “Energy and Resource Saving – XXI Century”. Information about previous regional seminars is available online.

Will be coffee breaks during seminar. In campus there is students diner and hotel (Naugorskoe Shosse 29 A). On April 30, Saturday, Organizing Committee can organize trip to the Spasskoye-Lutovinovo - State Memorial and Natural Reserve Museum of famous Russian writer Ivan Turgenev.

Our University located in South-West of Central Russia in historical town Orel (or Oryol), that was founded in 1566. Orel placed on Oka and Orlik rivers junction in 382 km from Moscow and has beautiful surroundings with number of historical landmarks.

Contact phones: +79208250040
Hotel reception phone is +7(4862)419882 or +79038816347
Official language of seminar – Russian.
There is no registration fee.