Eugeny Ryndin,Natalia Andreeva and Victor Luchinin
Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
Micromachines 2022, 13(1), 98; Special Issue Amorphous Oxide Semiconductor-Based Memristive Devices and Thin-Film Transistors
DOI: 10.3390/mi13010098
* Electrotechnical University “LETI”, Saint Petersburg (RU)
Abstract The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.
Fig: Structures of the memristors based on TiOx (a) and TiO2/Al2O3 (b) films.
Acknowledgements: This research was funded by the Ministry of Science and Higher Education of the Russian Federation, Grant No FSEE-2020-0013.
