Sep 30, 2026

[EUMW.EU] IHP Open Source Toolchain

Open-source Toolchain in RF and Digital Design
08:30 - 12:50; Monday 5 October 2026
European Microwave Week 

The European Chips Act serves as a strategic roadmap to secure technological sovereignty by aiming for a 20% global market share in semiconductors by 2030. The goal is to minimize the geopolitical supply chain risks and foster a self-sufficient ecosystem. Democratization of hardware development through the development of open-source EDA tools is a key pillar in these aspects. This would lower the entry barriers for SMEs and researchers and ultimately accelerate a collaborative and transparent era of European silicon innovation. There are multiple EU funded projects have started from last few years. These projects are set to offer robust process design kits (PDK) for open-source tools. In parallel, existing open-source tools for IC design are being further enhanced to include necessary functionalities for complete design flow for digital, analogue and RF design. Aligning with above mentioned goals, multiple private, academic, and commercial entities have stepped up towards the development. This workshop aims to share a glimpse of activities in open-source EDA tools developments and chip design activities in Europe. It would begin with a talk about current EU projects and the statuses in open-source EDA development. Then there will be two talks about digital and RF design flow using open-source tools. The final talk is about electro-magnetic simulation for RF circuits. Overall, this workshop is targets to publicize the open-source activities towards the building of a collaborative society in chip design domain. 

The event is aimed at IC designers, researchers, PhD candidates and engineers who already have a basic understanding of chip design and EDA workflows. Familiarity with digital, analogue or RF design will help you get the most from the sessions.

This workshop, chaired by the IHP Team: Corrado Carta, Sergei Andreev, and Farabi Ibne Jamal, gives you a practical view on the following Open-Source R&D Topics:
  • European Open-Source EDA projects currently stand
    • Sergei Andreev, IHP
  • How digital design flows can be built with Open-Source tools
    • Frank Kagan Gurkaynak, ETH Zürich
  • How Open-Source tools are being applied to RF design 
    • Harald Pretl, Johannes Kepler Universität Linz
  • How Open-Source EM simulation fits into RF circuit development
    • Giovanni Di Pietrantonio, IHP and Volker Mühlhaus, MCS, GmbH
Join the IHP OpenPDK Team if you want to understand where open-source chip design is heading, what is already usable today, and how these tools could complement your own work. Register at the EuMW website.






Sep 29, 2026

IEEE EDS/SSCS/CAS Mini-Colloquium

Friday 11 September 2026
UIB; Sa Riera Building
C/ de Miquel dels Sants Oliver, 2
07122 Palma

Professors Benjamin Iniguez, URV and Rodrigo Picos, UIB, have organize joint IEEE EDS/SSCS/CAS Mini-Colloquium as an integral part of the recent ESSERC2026 in Palma de Mallorca. All the MQ participants followed the MQ program as follows:

Mini-Colloquium Agenda
9:00 - 09:05 Opening

9:05-9:15 Tribute to Michael S. Shur

9:05-9:15 Tribute to José Epifânio da Franca 

9:15-10:05 Leveraging semiconductor technology for the benefit of society
Fernando Guarin (Director of IEEE Division I)

10:05-10:55 Power efficient WBG devices for the green transition
Mikael Ostling (KTH, SE)

10:55-11:25 Coffee Break

11:25-12:15 Holistic solutions to future computing - not only scaling
Francesca Iacopi (Purdue University, US)

12:15-13:05 Status of the Compact modeling and its Verilog-A standardization
Wladek Grabinski (MOS-AK, CH and IHP OpenPDK, DE)

13:05-14:25 Lunch

14:25-15:15 Graphene thin film technology for neural interfaces
José Antonio Garrido (ICN2, Barcelona, Spain)

15:15-16:05 Energy-Efficient Analog IC Design:
Exploring Solutions at Device, Circuit and System Levels
Antonio López (Public University of Navarra, Spain)

[paper] TCAD Modeling of SB Diode

Pedro Paulo Pessoa Oliveira1,2, Andreas Mai1,3, Norbert Herfurth1, 
and Davies William de Lima Monteiro2
TCAD Modeling of Schottky-Diode in an open-source SiGe BiCMOS technology
In 2026 40th Symposium on Microelectronics Technology and Devices 
SBMicro, pp. 1-4. IEEE, 2026
DOI: 10.1109/SBMicro70495.2026.11684441

1. IHP, Frankfurt (Oder), Germany
2. Department of Electrical Engineering, UFMG - Belo Horizonte-MG, Brazil
3. University of Applied Sciences Wildau, Germany

Abstract: Accurate simulation of Schottky barrier diodes (SBDs) is challenging because standard idealized models fail to capture non-ideal interface physics, such as Fermi-level pinning and image-force lowering. This paper presents an enhanced Technology Computer-Aided Design (TCAD) methodology to model an SBD from the IHP SG13G2 130-nm open-source SiGe BiCMOS technology. To overcome limitations of conventional simulations that often rely on oversimplified assumptions and empirical fitting, this work explicitly incorporates interface en- ergy states into the simulation, specifically modeling the fun- damental pinning mechanisms driven by Metal-Induced Gap States (MIGS). By calibrating the TiSi2/Si interface using the theoretical slope parameter, a value of 0.503 V was determined for the zero-bias barrier height. The resulting physics-based model captures the true rectifying nature of the contact and accurately reproduces the electrical characteristics targeted by the empirical model, achieving a nominal forward voltage drop of 0.39 V and a realistic reverse leakage current of 29.3 nA at -2.5 V. Ultimately, this paper shows the innovation and education gain of open- source foundry data by showcasing an open innovation path for a targeted near-industry device development flow.
FIG: a.) Energy band diagram of the Schottky diode at V=0V. Thecoordinate x = 0 corresponds to the TiSi2/n-Si Schottky interface. The inset displays the 2D device schematic, with the solid black line indicating the multi-segment cut-path used to extract the energy levels across the anode, n-buried layer and n-well RT to cathode contact. b.) Comparison of the simulated DC current-voltage (IV) characteristics between the proposed TCAD model and the standard SPICE macromodel.

Acknowledgment: The authors thank IHP for the open-source PDK and the collaborative research. They also thank Universidade Federal de Minas Gerais (UFMG) and the Brazilian Microelectronics Society (SBMicro) for supporting this work. Finally, gratitude is extended to S. Srivastava and B. Sake for their valuable guidance.

Sep 28, 2026

[NanoIC] Workshop

NanoIC Pilot Line Workshop
Next logic, memory, and chiplet technologies to enable future system innovation
October 1, 2026; Sede Turismo Andaluz; 40 Compañía Str. Málaga, Spain

Workshop Agenda

10:00 - 10:10 Welcome
10:10 - 10:30 Marie Garcia Bardon 
Short Introduction to EU Chips Act NanoIC Pilot Line
10:30 - 11:30 Nicolas Pantano 
Enabling Chiplet Architectures Through Advanced Packaging And High-Density Interconnects
11:30 - 12:00 Coffee break
12:00 - 13:00 Fernando García Redondo 
Opportunities in memory scaling: design-technology co-optimization for SRAM and emerging memories
13:00 - 14:00 Marie Garcia Bardon 
Advanced Logic Scaling: Technologies for the sub-2nm

Free Registration Online Workshop  
               https://u.uma.es/icc/workshop

Sep 26, 2026

[ChipFoundry] December Shuttle: Commitment deadline moved to November 4th