[EDS MQ/DL] The Transistor Turns 75

The Transistor Turns 75

A Forward Look to Challenges and Opportunities

A series of IEEE EDS Distinguished Lecturer talks on topics in current transistor and electron device research, reflecting on the challenges ahead and the rewards inherrent in overcomming them.

DATE AND TIME	LOCATION	HOSTS	REGISTRATION
Date: 02 Jun 2023 Time: 08:30 AM to 05:30 PM All times are (UTC+00:00) Edinburgh	Moller Institute Cambridge, England UK CB3 ODE Click here for Map	UK and Ireland Section Chapter, ED15 Contact Host	Starts 19 April 2023 06:00 AM Ends 30 May 2023 06:30 PM All times are (UTC+00:00) Edinburgh No Admission Charge Register Now

EDS DL SPEAKERS

• Benjamin Iniguez: Modeling 2D Semiconductor Devices
• Lluis Marsal: Organic Photovoltaics: Opportunities and Challenges
• Arokia Nathan: 
• Fernando Guarin: 75th Anniversary of the Transistor Semiconductor Industry Perspective
• Edmundo A. Gutierrez-D.: DC and RF reliability of advanced bulk and SOI CMOS technologies
• Merlyne De Souza: Challenges to Edge computing: an era beyond silicon CMOS
• Samar Saha: 
• MK Radhakrishnan: Birth and Evolution of Transistor and Its Impact on Humanity
• Xiaojun Guo: Transistor Technologies for Hybrid Integration at Micro- and Macro-scales
• Hiroshi Iwai: Present status and future of the nanoelectronics technology

Joint Spring MOS-AK, SB-MOS and IEEE EDS MQ

Joint Spring MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) Devices

with IEEE EDS Mini-Colloquium on “Non-Conventional Devices and Technologies”

September 29 to October 1, 2020

THM Giessen (Germany)

—by Mike Schwarz— The Joint Spring MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) devices with IEEE EDS Mini-Colloquium on “Non-conventional Devices and Technologies” was held from September 29 to October 1, 2020. While it was initially planned for spring at THM—University of Applied Sciences in Giessen (Germany), it was shifted to the early autumn due to the COVID-19 pandemic. However, finally the local organizers of NanoP Competence Center for Nanotechnology and Photonics of THM decided to move it to Zoom and perform it virtually. It was sponsored by THM, the EDS Germany Chapter, the IEEE Young Professionals Germany Affinity Group, and the AdMOS company. The event was attended by 69 IEEE members and 115 non IEEE members (guests) from 25 countries during the three days [read more...]

[VIRTUAL] EDS MQ on Compact Modeling

VIRTUAL MINI-COLLOQUIUM ON COMPACT MODELING

IEEE EDS Compact Modeling Technical Committee

EDS Spain Chapter

Department of Electronic, Electrical and Automatic Control Engineering, 

University Rovira I Virgili, Tarragona (Spain)

December 17, 2020 EDS MQ Program (times in CET)
	10:20-10:30 Benjamin Iñiguez, IEEE EDS MQ Chair Department of Electronic, Electrical and Automatic Control Engineering, University Rovira I Virgili, Tarragona (Spain) Opening session
	10:30-11:15 Yogesh. S Chauhan Department of Electrical Engineering, Indian Institute of Technology Kanpur (India) “BSIM-BULK and BSIM-HV: Industry Standard SPICE Models for Analog, RFand High Voltage Applications”
	11:15-12:00 Manoj Saxena Department of Electronics, University of Delhi  (India) “Modeling and Simulation of Robust Ultrasensitive Tunnel Field Effect Transistor Design for Biosensing Applications”
	12·00-12:45 Wladek Grabinski GMC, Commugny (Switzerland) “FOSS TCAD/EDA Tools for Semiconductor Device Modeling”
	12:45-13:30 Arokia Nathan Darwin College, University of Cambridge (UK) “Physics-Based Parameter Extraction for TFTs”
	13:30-15:00 Break
	15:00-15:45 Marcelo Pavanello Department of Electrical Engineering, Centro Universitario FEI, Sao Bernardo do Campo (Brazil) "Quantum Effects on the Mobility of SOI Nanowire MOSFETs Induced by the Active Substrate Bias"
	15:45-16:30 Michael S. Shur Department of Electrical, Systems and Computer Engineering, Rensselaer Polytechnic Institute, Troy NY (USA) “THz Compact SPICE/ADS model”
	16:30-17:15 Edmundo Gutiérrez Department of Electronics, INAOE, Puebla (Mexico) "RF MOSFET degradation modeling up to 67 GHz”
	End of EDS MQ

Mini-Colloquium (MQ) on Nanoelectronics

AGENDA
DATE: Saturday Aug. 26, 2016

VENUE: IIT Kanpur L16

This Mini-Colloquium (MQ) on Nanoelectronics is being hosted by the IEEE Electron Device Society UP Chapter in collaboration with the Department of Electrical Engineering at IIT Kanpur. Distinguished speakers from renowned universities will be presenting on wide range of topics in Nanoelectronics. The MQ will be organized into 1 hour talks by the speakers. The agenda would be as follows:

Time	Topic	Speaker
9:00 - 9:15	Inauguration
9:15 - 9:30	High Tea
9:30 - 10:30	Nanotransistors with 2D materials: Opportunities and Challenges	Prof. Navkanta Bhat IISc
10:30 - 11:30	Revisiting gate C-V characterization for high mobility semiconductor MOS devices	Prof. Anisul Haque East West Univ.
11:30 - 11:45	Tea
11:45 - 12:45		Prof. V. Ramgopal Rao IIT Delhi
12:45 - 14:15	Lunch
14:15 - 15:15	ASM-HEMT - First Industry Standard Compact Model for GaN HEMTs	Prof. Yogesh Singh Chauhan IIT Kanpur
15:15 - 16:15	Spintronics - Perspectives and Challenges	Prof. Brajesh Kumar Kaushik IIT Roorkee
16:15 - 16:30	Tea
16:30 - 17:30	Advanced Hetero structure based Nano Scale MOSFETs	Prof. Chandan Kumar Sarkar Jadavpur Univ.

Coordinator: Dr. Yogesh S.Chauhan IIT Kanpur, India
Website: http://www.iitk.ac.in/nanolab/MQ/index.html