Showing posts with label MQ. Show all posts
Showing posts with label MQ. Show all posts

May 8, 2023

[EDS MQ/DL] The Transistor Turns 75

The Transistor Turns 75
A Forward Look to Challenges and Opportunities


A series of IEEE EDS Distinguished Lecturer talks on topics in current transistor and electron device research, reflecting on the challenges ahead and the rewards inherrent in overcomming them.

  DATE AND TIME LOCATION HOSTS REGISTRATION
Date: 02 Jun 2023
Time: 08:30 AM to 05:30 PM

All times are (UTC+00:00) Edinburgh
Moller Institute
Cambridge, England UK
CB3 ODE

Click here for Map
UK and Ireland Section Chapter, ED15

Contact Host
Starts 19 April 2023 06:00 AM
Ends 30 May 2023 06:30 PM
All times are (UTC+00:00) Edinburgh

No Admission Charge

Register Now

EDS DL SPEAKERS
  • Benjamin Iniguez: Modeling 2D Semiconductor Devices
  • Lluis Marsal: Organic Photovoltaics: Opportunities and Challenges
  • Arokia Nathan: 
  • Fernando Guarin: 75th Anniversary of the Transistor Semiconductor Industry Perspective
  • Edmundo A. Gutierrez-D.: DC and RF reliability of advanced bulk and SOI CMOS technologies
  • Merlyne De Souza: Challenges to Edge computing: an era beyond silicon CMOS
  • Samar Saha: 
  • MK Radhakrishnan: Birth and Evolution of Transistor and Its Impact on Humanity
  • Xiaojun Guo: Transistor Technologies for Hybrid Integration at Micro- and Macro-scales
  • Hiroshi Iwai: Present status and future of the nanoelectronics technology

Jan 22, 2021

Joint Spring MOS-AK, SB-MOS and IEEE EDS MQ

Joint Spring MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) Devices
with IEEE EDS Mini-Colloquium on “Non-Conventional Devices and Technologies”
September 29 to October 1, 2020
THM Giessen (Germany)
—by Mike Schwarz— The Joint Spring MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) devices with IEEE EDS Mini-Colloquium on “Non-conventional Devices and Technologies” was held from September 29 to October 1, 2020. While it was initially planned for spring at THM—University of Applied Sciences in Giessen (Germany), it was shifted to the early autumn due to the COVID-19 pandemic. However, finally the local organizers of NanoP Competence Center for Nanotechnology and Photonics of THM decided to move it to Zoom and perform it virtually. It was sponsored by THM, the EDS Germany Chapter, the IEEE Young Professionals Germany Affinity Group, and the AdMOS company. The event was attended by 69 IEEE members and 115 non IEEE members (guests) from 25 countries during the three days [read more...]

Dec 15, 2020

[VIRTUAL] EDS MQ on Compact Modeling

VIRTUAL MINI-COLLOQUIUM ON COMPACT MODELING


IEEE EDS Compact Modeling Technical Committee
EDS Spain Chapter
Department of Electronic, Electrical and Automatic Control Engineering, 
University Rovira I Virgili, Tarragona (Spain)

December 17, 2020
EDS MQ Program (times in CET)
10:20-10:30
Benjamin IƱiguez, IEEE EDS MQ Chair
Department of Electronic, Electrical and Automatic Control Engineering, University Rovira I Virgili, Tarragona (Spain)
Opening session
10:30-11:15
Yogesh. S Chauhan
Department of Electrical Engineering,
Indian Institute of Technology Kanpur (India)
BSIM-BULK and BSIM-HV: Industry Standard SPICE Models for Analog, RFand High Voltage Applications
11:15-12:00
Manoj Saxena
Department of Electronics, University of Delhi  (India)
“Modeling and Simulation of Robust Ultrasensitive Tunnel Field Effect Transistor Design for Biosensing Applications”
12·00-12:45
Wladek Grabinski
GMC, Commugny (Switzerland)
FOSS TCAD/EDA Tools for Semiconductor Device Modeling
12:45-13:30
Arokia Nathan
Darwin College, University of Cambridge (UK)
“Physics-Based Parameter Extraction for TFTs”
13:30-15:00 Break
15:00-15:45
Marcelo Pavanello
Department of Electrical Engineering,
Centro Universitario FEI, Sao Bernardo do Campo (Brazil)
"Quantum Effects on the Mobility of SOI Nanowire MOSFETs Induced by the Active Substrate Bias"
15:45-16:30
Michael S. Shur
Department of Electrical, Systems and Computer Engineering,
Rensselaer Polytechnic Institute, Troy NY (USA)
THz Compact SPICE/ADS model
16:30-17:15
Edmundo GutiƩrrez
Department of Electronics, INAOE, Puebla (Mexico)
"RF MOSFET degradation modeling up to 67 GHz”
End of EDS MQ

Aug 14, 2017

Mini-Colloquium (MQ) on Nanoelectronics

AGENDA
DATE: Saturday Aug. 26, 2016
VENUE: IIT Kanpur L16
This Mini-Colloquium (MQ) on Nanoelectronics is being hosted by the IEEE Electron Device Society UP Chapter in collaboration with the Department of Electrical Engineering at IIT Kanpur. Distinguished speakers from renowned universities will be presenting on wide range of topics in Nanoelectronics. The MQ will be organized into 1 hour talks by the speakers. The agenda would be as follows:

TimeTopicSpeaker
9:00 - 9:15Inauguration
9:15 - 9:30High Tea
9:30 - 10:30Nanotransistors with 2D materials: Opportunities and ChallengesProf. Navkanta Bhat
IISc
10:30 - 11:30Revisiting gate C-V characterization for high mobility semiconductor MOS devicesProf. Anisul Haque
East West Univ.
11:30 - 11:45Tea
11:45 - 12:45Prof. V. Ramgopal Rao
IIT Delhi
12:45 - 14:15Lunch
14:15 - 15:15ASM-HEMT - First Industry Standard Compact Model for GaN HEMTsProf. Yogesh Singh Chauhan
IIT Kanpur
15:15 - 16:15Spintronics - Perspectives and ChallengesProf. Brajesh Kumar Kaushik
IIT Roorkee
16:15 - 16:30Tea
16:30 - 17:30Advanced Hetero structure based Nano Scale MOSFETsProf. Chandan Kumar Sarkar
Jadavpur Univ.
Coordinator: Dr. Yogesh S.Chauhan IIT Kanpur, India
Website: http://www.iitk.ac.in/nanolab/MQ/index.html