[conference] FIRST 2023

Website: http://sme.tju.edu.cn/info/1095/2265.htm

English: https://www.aconf.org/conf_194081.html

Date: 30 Oct 2023 (Mon) to 31 Oct 2023 (Tue)

Main Organizer: Tianjin University

Venue: Online

Theme: Interdisciplinarity: The Fusion of Technologies (Semiconductor, Artificial Intelligence, Internet-of-Things, and Communications)

The inaugural FIRST international conference will be held online on Monday, 30th and Tuesday 31st October 2023. Many world-renowned professors, experts and researchers in communication and semiconductor technologies and other related fields at home and abroad will attend this conference. This international conference aims to discuss the open problems and present new solutions that address the challenges of future communication systems, artificial intelligence, internet-of-things, and chip design. Specifically, the role of semiconductors in future communications will be presented and how can the semiconductor and communication industry emerge stronger after the pandemic will be discussed.

This FIRST international conference will be open to relevant enterprises and experts in the field of semiconductors and integrated circuits, providing a professional multi-disciplinary and multi-field exchange and cooperation platform for enterprises, universities and research institutes in the field of semiconductors and integrated circuits, providing innovative ideas for today's increasingly complex and difficult product development, combining cutting-edge scientific research and product innovation more effectively. At the same time, it lays a solid foundation for more in-depth school-enterprise cooperation.

Registration（注册网址）: 中文站 - https://www.aconf.cn/conf_194081.html

[PhD Thesis] Digital-based analog processing in nanoscale CMOS ICs for IoT applications

Digital-based analog processing in nanoscale CMOS ICs for IoT applications

http://hdl.handle.net/10183/249786

PhD Cadndiate: Pedro Filipe Leite Correia De Toledo

Universidade Federal do Rio Grande do Sul. Instituto de Informática

Programa de Pós-Graduação em Microeletrônica.

Advisor: Klimach, Hamilton Duarte

Co-advisor: Crovetti, Paolo Stefano

Abstract: The Internet-of-Things (IoT) concept has been opening up a variety of applications, such as urban and environmental monitoring, smart health, surveillance, and home automation. Most of these IoT applications require more and more power/area efficient Complemen ary Metal–Oxide–Semiconductor (CMOS) systems and faster prototypes (lower time-to market), demanding special modifications in the current IoT design system bottleneck: the analog/RF interfaces. Specially after the 2000s, it is evident that there have been significant improvements in CMOS digital circuits when compared to analog building blocks. Digital circuits have been taking advantage of CMOS technology scaling in terms of speed, power consumption, and cost, while the techniques running behind the analog signal processing are still lagging. To decrease this historical gap, there has been an increasing trend in finding alternative IC design strategies to implement typical analog functions exploiting Digital in-Concept Design Methodologies (DCDM). This idea of re-thinking analog functions in digital terms has shown that Analog ICs blocks can also avail of the feature-size shrinking and energy efficiency of new technologies. This thesis deals with the development of DCDM, demonstrating its compatibility for Ultra-Low-Voltage (ULV) and Power (ULP) IoT applications. This work proves this statement through the proposing of new digital-based analog blocks, such as an Operational Transconductance Amplifiers (OTAs) and an ac-coupled Bio-signal Amplifier (BioAmp). As an initial contribution, for the first time, a silicon demonstration of an embryonic Digital-Based OTA (DB-OTA) published in 2013 is exhibited. The fabricated DB-OTA test chip occupies a compact area of 1,426 µm2 , operating at supply voltages (VDD) down to 300 mV, consuming only 590 pW while driving a capacitive load of 80pF. With a Total Harmonic Distortion (THD) lower than 5% for a 100mV input signal swing, its measured small-signal figure of merit (FOMS) and large-signal figure of merit (FOML) are 2,101 V −1 and 1,070, respectively. To the best of this thesis author’s knowledge, this measured power is the lowest reported to date in OTA literature, and its figures of merit are the best in sub-500mV OTAs reported to date. As the second step, mainly due to the robustness limitation of previous DB-OTA, a novel calibration-free digital-based topology is proposed, named here as Digital OTA (DIG OTA). A 180-nm DIGOTA test chip is also developed exhibiting an area below the 1000 µm2 wall, 2.4nW power under 150pF load, and a minimum VDD of 0.25 V. The proposed DIGOTA is more digital-like compared with DB-OTA since no pseudo-resistor is needed. As the last contribution, the previously proposed DIGOTA is then used as a building block to demonstrate the operation principle of power-efficient ULV and ultra-low area (ULA) fully-differential, digital-based Operational Transconductance Amplifier (OTA), suitable for microscale biosensing applications (BioDIGOTA) such as extreme low area Body Dust. Measured results in 180nm CMOS confirm that the proposed BioDIGOTA can work with a supply voltage down to 400 mV, consuming only 95 nW. The BioDIGOTA layout occupies only 0.022 mm2 of total silicon area, lowering the area by 3.22X times compared to the current state of the art while keeping reasonable system performance, such as 7.6 Noise Efficiency Factor (NEF) with 1.25 µVRMS input-referred noise over a 10 Hz bandwidth, 1.8% of THD, 62 dB of the common-mode rejection ratio (CMRR) and 55 dB of power supply rejection ratio (PSRR). After reviewing the current DCDM trend and all proposed silicon demonstrations, the thesis concludes that, despite the current analog design strategies involved during the analog block development

Fig: a) analog design octagon; b) gm/ID·fT versus the inversion coefficient IC, λc is the parameter corresponding to the fraction of the channel in which the carrier drift velocity reaches the saturated velocity over a portion of the channel geometrical length; c) Performance difference between analog and digital blocks over time; d) Area reduction over the years of the bitcell SRAM, OTA and bandgap reference

[Book] More-than-Moore Devices and Integration for Semiconductors

More-than-Moore Devices and Integration

for Semiconductors

Editors: Francesca Iacopi and Francis Balestra

Publisher: Springer Cham

DOI: 10.1007/978-3-031-21610-7

This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems.

• Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems;
• Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources;
• Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.

Table of contents (7 chapters)

• Front Matter Pages i-xiv
• Energy Harvesters and Power Management Pages 1-45
  Michail E. Kiziroglou, Eric M. Yeatman
• SiC and GaN Power Devices Pages 47-104
  Konstantinos Zekentes, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi et al.
• Flexible and Printed Electronics Pages 105-125
  Benjamin Iñiguez
• Terahertz Metasurfaces, Metawaveguides, and Applications Pages 127-156
  Wendy S. L. Lee, Shaghik Atakaramians, Withawat Withayachumnankul
• Mechanical Robustness of Patterned Structures and Failure Mechanisms
  Ehrenfried Zschech, Maria Reyes Elizalde Pages 157-189
• Neuromorphic Computing for Compact LiDAR Systems Pages 191-240
  Dennis Delic, Saeed Afshar
• Integrated Sensing Devices for Brain-Computer Interfaces Pages 241-258
  Tien-Thong Nguyen Do, Ngoc My Hanh Duong, Chin-Teng Lin

Acknowledgements: We would like to thank the following colleagues for their help in peer-reviewing this book’s material: Dr. Yang Yang and Dr. Diep Nguyen (University of Technology Sydney, Australia); Prof. Xuan-Tu Tran (Vietnam National University Hanoi), Prof. Gustavo Ardila and Prof. Pascal Xavier (University Grenoble Alpes, France); and Prof. Edwige Bano (Grenoble INP, France). FI would also like to acknowledge support from the Australian Research Council Centre of Excellence in Transformative MetaOptical Systems (TMOS, CE200100010).

Francesca Iacopi, Ultimo, NSW, Australia 

Francis Balestra, Grenoble, France 

[paper] Roadmapping of Nanoelectronics for the New Electronics Industry

Paolo Gargini¹,Francis Balestra², and Yoshihiro Hayashi³

Roadmapping of Nanoelectronics for the New Electronics Industry

Appl. Sci. 2022, 12(1), 308

DOI: 10.3390/app12010308

Received: 4 November 2021 / Revised: 17 December 2021 

Accepted: 20 December 2021 / Published: 29 December 2021

Academic Editor: Gerard Ghibaudo; This article belongs to the Special Issue Advances in Microelectronic Materials, Processes and Devices

   
1IEEE IRDS, (US)
2 CNRS, Grenoble INP (F)
3 Keio University, Tokyo (J)

Abstract: This paper is dedicated to a review of the international effort to map the future of nanoelectronics from materials to systems for the new electronics industry. The following sections are highlighted: the Roadmap structure with the international teams, the methodology and historical evolution, the various eras of scaling, the new ecosystems and computer industry, the evolving supply chain, the development of SoC and SiP, the advent of the Internet of Everything and the 5G communications, the dramatic increase of data centers, the power challenge, the technology fusion, heterogeneous and system integration, the emerging technologies, devices and computing architectures, and the main challenges for future applications.

FIG: 40 Years of Microprocessor Trend Data

[book] Fully Depleted SOI

Sorin Cristoloveanu; Fully Depleted Silicon-On-Insulator:

Nanodevices, Mechanisms and Characterization
2021 Elsevier B.V. 

ISBN: 978-0-12-819643-4

Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology.

There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IoT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. 

Key Features:

• Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient
• Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices
• Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

Table of Contents:

Front Matter

Preface

Part I: Technology

Chapter 1 - FD-SOI technology pp. 3-37

Part II: Mechanisms in FD-SOI MOSFET

Chapter 2 - Coupling effects pp. 41-70

Chapter 3 - Scaling effects pp. 71-114

Chapter 4 - Floating-body effects pp. 115-138

Part III: Electrical characterization techniques for FD-SOI structures

Chapter 5 - The pseudo-MOSFET pp. 141-177

Chapter 6 - Diode-based characterization methods pp. 179-200

Chapter 7 - Characterization methods for FD-SOI MOSFET pp. 201-238

Part IV: Innovative FD-SOI devices

Chapter 8 - Electrostatic doping and related devices pp. 241-265

Chapter 9 - Band-modulation devices pp. 267-298

Chapter 10 - Emerging devices pp. 299-348

FD-SOI teasers pp. 349-352

Index

[book] Ultra-Low Power FM-UWB Transceivers for IoT

Ultra-Low Power FM-UWB Transceivers for IoT

Vladimir Kopta and Christian Enz

River Publishers, 2020, pp.i-xxiv

Over the past two decades we have witnessed the increasing popularity of the internet of things. The vision of billions of connected objects, able to interact with their environment, is the key driver directing the development of future communication devices. Today, power consumption as well as the cost and size of radios remain some of the key obstacles towards fulfilling this vision. Ultra-Low Power FM-UWB Transceivers for IoT presents the latest developments in the field of low power wireless communication. It promotes the FM-UWB modulation scheme as a candidate for short range communication in different IoT scenarios. The FM-UWB has the potential to provide exactly what is missing today. This spread spectrum technique enables significant reduction in transceiver complexity, making it smaller, cheaper and more energy efficient than most alternative options. The book provides an overview of both circuit-level and architectural techniques used in low power radio design, with a comprehensive study of state-of-the-art examples. It summarizes key theoretical aspects of FM-UWB with a glimpse at potential future research directions. Finally, it gives an insight into a full FM-UWB transceiver design, from system level specifications down to transistor level design, demonstrating the modern power reduction circuit techniques. Ultra-Low Power FM-UWB Transceivers for IoT is a perfect text and reference for engineers working in RF IC design and wireless communication, as well as academic staff and graduate students engaged in low power communication systems research.

[CAS Seasonal School] How Technology is Impacting Agribusiness

How Technology is Impacting Agribusiness

A CAS seasonal school on technology and agribusiness will be held virtually from November 16th to November 20th. The program is quite interesting and we invite you to register through our web page www.asic-chile.cl. Registration is free.

The current world population of 7.6 billion is expected to reach 9.8 billion in 2050. According to the United Nations Food and Agriculture Organization (FAO) global agricultural productivity must increase by 50% – 70% to be able to feed the world population in 2050. Other researchers consider that reducing the waste of food would be enough.

Factors if not obstacles to be considered to meet global food demand by 2050 and beyond:

• Less arable land: As cities are growing, the space allowed to agriculture is shrinking.
• Climate change: Impacting dramatically agribusiness.
• Role of the agribusiness on the GHG emissions.
• Planet boundaries and the role of agribusiness.
• Availability of freshwater.
• Soil degradation.

The need has never been greater for innovative and sustainable solutions and technology should lead to significant improvement in our food and nutritional security.

In this seasonal school prestigious researchers and experts from all over the world will present the problems and challenges agribusiness is facing and how technologies such as IoT, AI, Machine Learning, sensors, electronic circuits, electronic systems, ICs, etc., can be applied to improve and solve the majority of those problems.

This is the first of a series of “Technology and Agribusiness” Seasonal Schools. It will be a meeting point for professionals working on Precision and Smart Agriculture, as well as professionals working on IoT, sensors, electronic circuits, electronic systems, ICs, etc.

We invite you to participate in this first version of the Technology and Agribusiness Seasonal School, which due to the pandemic will be 100% online and free of charge.

Join us!

[paper] IoT Vision empowered by EH-MEMS and RF-MEMS

Internet of things (IoT); internet of everything (IoE); tactile internet; 5G
A (not so evanescent) unifying vision empowered 
by EH-MEMS (energy harvesting MEMS) and RF-MEMS (radio frequency MEMS)

 Jacopo Iannacci
Fondazione Bruno Kessler (FBK) in Trento (IT)

Sensors and Actuators A: Physical 272 (2018): 187-198

Abstract: This work aims to build inclusive vision of the Internet of Things (IoT), Internet of Everything (IoE), Tactile Internet and 5G, leveraging on MEMS technology, with focus on Energy Harvesters (EH-MEMS) and Radio Frequency passives (RF-MEMS). The IoT is described, stressing the pervasivity of sensing/actuating functions. High-level performances 5G will have to score are reported. Unifying vision of the mentioned paradigms is then built. The IoT evolves into the IoE by overtaking the concept of thing. Further step to Tactile Internet requires significant reduction in latency, it being enabled by 5G.

The discussion then moves closer to the hardware components level. Sets of specifications driven by IoT and 5G applications are derived. Concerning the former, the attention is concentrated on typical power requirements imposed by remote wireless sensing nodes. Regarding the latter, a set of reference specifications RF passives will have to meet in order to enable 5G is developed. Once quantitative targets are set, a brief state of the art of EH-MEMS and RF-MEMS solutions is developed, targeting the IoT and 5G, respectively. In both scenarios, it will be demonstrated that MEMS are able to address the requirements previously listed, concerning EH from various sources and RF passive components.

FIG: Scheme of the pillar drivers supporting evolution of the IoT into IoE andTactile Internet.
Some relevant IoT technology enablers are indicated.

In conclusion, the frame of reference depicted in this work outlines a relevant potential borne by EH-MEMS and RF-MEMS solutions within the unified scenario of IoT, IoE, Tactile Internet and 5G, making the forecast of future relentless growth of MEMS-based devices, more plausible and likely to take place.

2016 IEDM Tutorials

2016 International Electron Devices Meeting Tutorials

The tutorials are in their sixth year and are 90 minute stand-alone presentations on specialized topics taught by world-class experts. These tutorials provide a brief introduction to their respective fields, and facilitate understanding of the technical sessions. The tutorial sessions will take place on Saturday, Dec.3, 2016. Three tutorials are given in parallel in two time slots, at 2:45 p.m.and 4:30 p.m. respectively.

Topics presented at 2:45pm - 4:15pm:

• The Struggle to Keep Scaling BEOL, and What We Can Do Next
  Rod Augur, Distinguished Member of the Technical Staff, GlobalFoundries
• Physical Characterization of Advanced Devices
  Robert Wallace, Univ. Texas at Dallas
• Spinelectronics: From Basic Phenomena to Magnetoresistive Memory (MRAM) Applications
  Bernard Dieny, Chief Scientist, Spintec CEA

Topics presented at 4:30pm - 6:00pm:

• Electronic Circuits and Architectures for Neuromorphic Computing Platforms
  Giacomo Indiveri, Univ. of Zurich and ETH Zurich
• Present and Future of FEOL Reliability—from Dielectric Trap Properties to Reliable Circuit Operation
  Ben Kaczer, Principal Scientist, IMEC
• Embedded Systems and Innovative Technologies for IoT Applications
  Ali Keshavarzi, Vice President of R&D, Cypress Semiconductor

Register for the IEDM tutorials here: http://ieee-iedm.org/onsite-registration-center/online-registration/