QUCS mentioned in IEEE-EDL paper

Jacopo Iannacci, Fondazione Bruno Kessler (FBK), Trento, Italy, has recently published an article in the IEEE Electron Device Letters (EDL) where he used and explicitly mentioned the QUCS, FOSS CAD/EDA simulator:

RF-MEMS Technology for Future Mobile and High-Frequency Applications:

Reconfigurable 8-Bit Power Attenuator Tested up to 110 GHz

J. Iannacci, M. Huhn, C. Tschoban and H. Pötter

in IEEE EDL, vol. 37, no. 12, pp. 1646-1649, Dec. 2016.

Abstract: In this letter, we present and test—to the best of our knowledge, for the first time—, an 8-bit (256-state) reconfigurable RF-MEMS attenuator, from 10 MHz up to 110 GHz, realized in the CMM-FBK technology. Resistive loads, in series and shunt configuration, are selectively inserted on the RF line by means of electrostatic MEMS ohmic switches. The network exhibits several attenuation levels in the range of −10/−45 dB that are rather flat up to 50 GHz, and a certain number of configurations with VSWR smaller than 4 from nearly dc up to 110 GHz, and better than 2 on a frequency span of ~80 GHz.

doi: 10.1109/LED.2016.2623328

[read more: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7726036&isnumber=7739309]

Top #opensource #conference picks for #2017 https://t.co/nJzg2bSbpq #papers

Top #opensource #conference picks for #2017 https://t.co/nJzg2bSbpq #papers

— Wladek Grabinski (@wladek60) December 14, 2016

from Twitter https://twitter.com/wladek60

December 14, 2016 at 10:37AM
via IFTTT

[paper] A surface potential large signal model for AlGaN/GaN HEMTs

A surface potential large signal model for AlGaN/GaN HEMTs

Q. Wu, Y. Xu, Z. Wen, Y. Wang and R. Xu

2016 11th EuMIC, London, UK, 2016, pp. 349-352

doi: 10.1109/EuMIC.2016.7777562

Abstract: This paper presents an accurate analytical surface-potential-based compact model for AlGaN/GaN HEMTs for SPICE-like circuit simulation. Considering the important energy level E₀, an easy-implemented analytical continuous expression for the fermi level position E_f was deduced to obtain the surface potential (SP) φ_s. Then analytical core models for intrinsic charge and drain current are derived based on φ_s. The model has been implemented in Agilent ADS by using symbolic defined device. Excellent agreement of DC I-V, fundamental output power, power added efficiency and gain is obtained for the first time compared with measurement results. Moreover, the effect of physical parameter such as the barrier thickness d on device characteristic is researched on the basic of this model. The results show that the proposed physical based model can be useful for technological parameters analysis and optimization of process.

[read more: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7777562&isnumber=7777458]

Writing a science/tech book, is it that hard?

Writing a science/tech book, is it that hard?

As a microwave engineer Errikos Lourandakis, PhD, a senior R&D engineer at Helic Inc., started with RF device characterization while working on his PhD. He got fascinated about it and gradually devoted much of his time in the lab (see his lab pic below), though RF and Microwave Measurements were just a vehicle for microwave circuit design that was his actual PhD topic. After 10+ years in academia and industry, recently he has also published his new book "On-Wafer Microwave Measurements and De-embedding"

Errikos' RF and mm-Wave Measurement Lab

Is it worth it? [read more...]

[Fellowship] Physics Based Modeling Simulation and Electrical Characterization

Physics Based Modeling Simulation and Electrical Characterization 

of Quantum Effects in Multigate MOSFETs

[DRDO Fellowship]

Dr. Vimala Palanichamy is looking for Junior Research Fellowship (INR 25000 Stipend per Month) for this project funded by Defense Research and Development Organization (DRDO), Government of India. Please refer below advertisement for applying for Junior Research Fellowship for working on the project: 

http://dayanandasagar.edu/dsce/images/pdf/Advertisement_for_JRF.pdf