[paper] RF NMOS Transistor in a 0.25 µm SiGe-C BiCMOS Process

Engin Cagdas, Huseyin Aniktar, M. Emin Tunbak, Volkan Fenercioglu, 

S. Ebru Arikan, A. Ulvi Caliskan

Modeling and Validation of an Isolated NMOS Transistor

in a 0.25 µm SiGe-C BiCMOS Process

30th IEEE International Conference on Electronics, Circuits and Systems 

(ICECS), Istanbul, Turkiye, 2023, pp. 1-4

DOI: 10.1109/ICECS58634.2023.10382848

*Semiconductor Technologies Research Laboratory, Tübitak Bilgem Yital, Kocaeli, Turkey

Abstract: This study presents the generation of a scalable model based on measurement-aided numerical calculations for INMOS (isolated NMOS) with both PSP and BSIM3 parameter set. Various INMOS structures with several different sizes are fabricated in an in-house developed 0.25 µm BiCMOS process. The validity of the constructed model is verified with the measurement results. This work explains main steps and details of MOS transistor modeling. An RF SPDT switch is also designed with using both PSP and BSIM3 based model. The designed RF SPDT switch performance which is based on these two models is given. Both PSP and BSIM3 model performance are compared in the designed RF SPDT switch simulation results. 

Fig: The INMOS schematic (bottom left): the number 1 represents NMOS transistor, the number 2 Bulk to D-Nwell diode and the number 3 D-Nwell to P-Sub diode. B-4-20 INMOS with DC pad (top left) and with RF pad structure (right). 

Acknowledgment: The authors would like to thank Dr. M. Guntekin Kabuli for valuable discussions and editorial assistance. We would also like to thank the YITAL chip production personel.

[paper] PSP RF Model

Xiaonian Liu1, 2, and Yansen Liu1, 2

Scalable PSP RF Model for 0.11 µm MOSFETs

Progress In Electromagnetics Research Letters, Vol. 113, 43–51, 2023

1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
2 Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province, Changsha 410081, China.

Abstract: An accurate, efficient and scalable SPICE model is essential for modern integrated circuits design, especially for radio frequency (RF) circuit design. A PSP based scalable RF model is extracted and verified in 0.11 µm CMOS manufacturing process. The S parameter measurement system and open-short de-embedding technique is applied. The macro-model equivalent subcircuit and parameters extraction strategy are discussed. The extracted model can match the de-embedded S parameters data well. By combining the model parameters’ dependencies on each geometry quantity, the scalable expression of parameters with all geometry quantities included can be obtained. This work can be a reference for the RF MOSFETs modeling and RF circuit design.

Fig: The PSP RF subcircuit model and its S-par s fitting

results of NMOS with Wf = 2 µm, Lf = 0.12 µm, nf = 16

Acknowledgment: This work is supported by the National Natural Science Foundation of China under Grant 62204083, and the Youth Fund of Education Department of Hunan Province under Grant 21B0057.

[paper] PSP RF Model

Xiaonian Liu^{1, 2} and Yansen Liu¹

A Scalable PSP RF Model for 0.11 µm MOSFETs

Progress In Electromagnetics Research Letters, Vol. 113, 43–51, 2023

DOI :10.2528/PIERL23081405

1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
2 Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province, Changsha 410081, China.

Abstract : An accurate, efficient and scalable SPICE model is essential for modern integrated circuits design, especially for radio frequency (RF) circuit design. A PSP based scalable RF model is extracted and verified in 0.11 CMOS manufacturing process. The S parameter measurement system and open-short de-embedding technique is applied. The macro-model equivalent subcircuit and parameters extraction strategy are discussed. The extracted model can match the de-embedded S parameters data well. By combining the model parameters’ dependencies on each geometry quantity, the scalable expression of parameters with all geometry quantities included can be obtained. This work can be a reference for the RF MOSFETs modeling and RF circuit design.

Fig: The RF PSP Model Subcircuit

Acknowledgment : This work is supported by the National Natural Science Foundation of China under Grant 62204083, and the Youth Fund of Education Department of Hunan Province under Grant 21B0057.

Cryogenic characterization of CMOS technologies

A. Beckers, F. Jazaeri, A. Ruffino, C. Bruschini, A. Baschirotto and C. Enz

Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing

47th ESSDERC, Leuven, Belgium, 2017, pp. 62-65.

Abstract: This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300,77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems [read more...] doi: 10.1109/ESSDERC.2017.8066592

R. M. Incandela, L. Song, H. A. R. Homulle, F. Sebastiano, E. Charbon and A. Vladimirescu

Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures

47th ESSDERC, Leuven, Belgium, 2017, pp. 58-61.

Abstract: The characterization of nanometer CMOS transistors of different aspect ratios at deep-cryogenic temperatures (4 K and 100 mK) is presented for two standard CMOS technologies (40 nm and 160 nm). A detailed understanding of the device physics at those temperatures was developed and captured in an augmented MOS11/PSP model. The accuracy of the proposed model is demonstrated by matching simulations and measurements for DC and time-domain at 4 K and, for the first time, at 100 mK [read more...] doi: 10.1109/ESSDERC.2017.8066591

LETI Compact Modeling Links

LETI compact modeling links points to the Workshops and Conferences:

MOS-AK (Modeling of Systems and Parameter Extraction Working Group)
S3S (IEEE SOI-3D Subthreshold Microelectronics Technology Unified Conference)

IEDM (IEEE International Electron Devices Meeting)
VLSI  (29th International Conference on VLSI Design)
SISPAD (Simulation of Semiconductor Processes and Devices)

[read more...]