[program] ICMC2026

INTERNATIONAL COMPACT MODELING CONFERENCE PROGRAM

2026.si2-icmc.org

The 2026 conference continues under the theme “Enhancing Collaboration in Modeling with the Semiconductor Industry.” This year, ICMC especially encourages contributions in several timely and important areas, including electrostatic discharge (ESD) modeling for protection design, reliability and aging-aware compact models and simulation techniques, and the use of AI or machine learning for model development, parameter extraction, and circuit simulation efficiency. The conference also covers a broad range of topics in compact modeling, including the application of device models, device model development, model enhancements and implementations, and emerging devices.

This year’s technical program includes 3 keynote speakers, 7 invited speakers, 28 technical talks, 12 posters and a panel session. The program reflects both the depth and diversity of current modeling research and practice, ranging from model calibration and validation methodologies to reliability, RF, high-voltage, cryogenic, and emerging device applications.

Program at a Glance

Speaker	Title
	Keynote Presentations
Chenming Hu	BSIM, FinFET, and Open Innovation
Yuan Taur	Physical Insights Beyond the Textbook Modeling of MOSFETs and pn-junctions
Elyse Rosenbaum	Measurement Challenges Impeding the Verification of ESD Compact Model Accuracy and Generalizability
	Invited Presentations
James Victory	Modeling and Simulation Challenges in Modern Power Discrete Semiconductor Technologies
Gilson Wirth	Modeling of Low-Frequency Noise and BTI in Electron Devices
Chien-Ting Tung	Application of AI and ML in the Compact Modeling Domain
Michael Stockinger	On-Chip ESD Protection Design Optimization Using ESD Device Compact Models
Darsen Lu	Ferroelectric Memory Devices Compact Modeling and Applications
Meng-Lin Lu	Applications of Machine Learning Techniques in the Compact Modeling Platform
Lorenzo Peri	Compact Quantum Dot Models for Hybrid Microwave Circuits and Quantum Information Processing

Program Grid – Friday, July 30

Time	Session
8:30 - 8:45	Day 1 Welcome (Queens Salon)
8:45 - 9:25	[Keynote] BSIM, FinFET, and Open Innovation by Prof. Chenming Hu
9:25 - 10:25	Advances in Compact Modeling (Queens Salon)
10:25 - 10:45	Coffee Break (Royal Salon & Kings View Room)
10:45 - 12:10	Ferroelectric and other Nonvolatile Memories (Queens Salon)
12:10 - 13:20	Lunch Served (Royal Salon & Kings View Room)
13:20 - 14:00	[Keynote] Physical Insights Beyond the Textbook Modeling of MOSFETs and p-n Junctions by Prof. Yuan Taur
14:00 - 15:05	Emerging Devices and Technologies (Queens Salon)
15:05 - 15:25	Coffee Break (Royal Salon & Kings View Room)
15:25 - 16:30	Wide Bandgap Material Device Models (Queens Salon)
16:30 - 17:00	Poster Introductions (Queens Salon)
17:00	Poster Session & Reception (Verandah Grill/Deck)

Program Grid – Friday, July 31

Time	Session
8:30 - 8:40	Day 2 Welcome (Queens Salon)
8:40 - 9:20	[Keynote] Measurement Challenges Impeding the Verification of ESD Compact Model Accuracy and Generalizability by Prof. Elyse Rosenbaum
9:20 - 10:05	ESD Protections Modeling (Queens Salon)
10:05 - 10:25	Coffee Break (Royal Salon & Kings View Room)
10:25 - 11:55	Machine Learning and Artificial Intelligence in Compact Modeling (Queens Salon)
11:55 - 12:55	Lunch Served (Royal Salon & Kings View Room)
12:55 - 13:55	Panel Session: Machine Learning for Compact Modeling – Promises, Pitfalls, and Paths to Industry Adoption
13:55 - 14:40	Modeling of Noise and Traps (Queens Salon)
14:40 - 15:00	Coffee Break (Royal Salon & Kings View Room)
15:00 - 16:20	Devices at Cryogenic Temperatures (Queens Salon)
16:20 - 17:00	Closing Ceremony & Awards (Queens Salon)

Heading to San Francisco for ICMC 2025?

✈️ Heading to San Francisco for ICMC 2025?

The International Compact Modeling Conference (ICMC) is just 2 months away! Be sure to register and secure your room at the Clift Royal Sonesta. Book by May 26 to take advantage of a special discounted rate!

🔗 Register now: https://loom.ly/XmJUtI4
🔗 Reserve your room: https://loom.ly/zyzycVs

hashtag

[C4P] ICMC 2025

STRENGTHENING MODELING COLLABORATION WITH THE SEMICONDUCTOR INDUSTRY

International Compact Modeling Conference (ICMC 2025)

June 26-27, 2025; The Clift Royal Sonesta, San Francisco

IMPORTANT DATES Abstract Submission Deadline January 15, 2025 Acceptance Notifications March 10, 2025 Full Paper Submission Deadline April 20, 2025 ORGANIZING COMMITTEE General Chair Peter M. Lee Micron  Vice Chair Shahed Reza Sandia Lab Technical Program Chair Colin Shaw Silvaco Technical Program Vice Chair Gert-Jan Smit NXP  Treasurer Leigh Anne Clevenger Si2 Secretariat Conference Catalysts icmc@conferencecatalysts.com

The Compact Model Coalition (CMC) brings academia and industry partners together in the development and standardization of compact models for semiconductor devices. For 30 years now, the CMC has been instrumental in creating standardized and verified models for designers to use in their increasingly complex circuits for SPICE simulation. The CMC is organizing a new and innovative International Compact Modeling Conference. Cosponsored by IEEE EDS, it will focus uniquely on compact device models, their development and broad application in the semiconductor industry. You are invited to participate in the evolution of these models, guide model development to help circuit designers create the best circuit performance possible, and enable foundries to leverage the strength of their device fabrication to full extent. Join the world experts in design, process technology, and model development to discuss state-of-the-art semiconductor device modeling for a two-day in-person event in one location, offering a great opportunity to present and learn about this core element of circuit design and how to get the most from these global collaborations. We are seeking papers for oral or poster presentations in the following areas: APPLICATION OF DEVICE MODELS Innovative application of CMC standard device models Best practices, novel use, and benefits of standard device models in circuit design Use of compact models to demonstrate foundry device capabilities DEVICE MODEL DEVELOPMENT Modeling of physical phenomena: Statistical variation, reliability and aging, noise and fluctuations, high frequency effects, Electrostatic Discharge (ESD), self heating, layout effects, etc. Methodologies to assist in model development, practices for coding, quality assurance, circuit simulator integration, etc. Parameter extraction, measurement techniques, model calibration, validation, and verification methodologies, including solutions based on AI or Machine Learning. MODEL ENHANCEMENTS AND IMPLEMENTATIONS Model extensions to capture additional device features (leakage, noise, capacitance, second-order dependencies, …) or expand the operating range of existing devices (bias, power, temperature, frequency, etc.) Model enhancements to support the design of new or demanding circuits Model workflow, implementation, and integration into the design environment (PDK) Computing/simulation platforms, simulation algorithms, and methodologies to improve simulation performance (parallel processing, etc.) Models for established device types that currently lack standardization. MODELING FOR FUTURE/EMERGING TECHNOLOGIES AND APPLICATIONS Models for emerging device types or architectures on the horizon, such as, ferroelectric devices, silicon photonics, cryogenic, quantum computing, etc. Modeling of new physical phenomena in support of current and novel device technologies Novel device technologies currently being researched that could further revolutionize circuit performance, have implications in the design flow, and may become mainstream in the future Please submit your paper proposals in the form of a 2-page abstract for review by January 15, 2025 here 2025.si2-icmc.org. Acceptance notifications will be sent by March 10, 2025. Accepted contributions (for both oral and poster presentations) are expected to submit a camera-ready 4-page draft version of their papers by April 20, 2025 and final version by May 23, 2025 for publication in IEEE Xplore®.