[paper] Noise Degradation and Recovery in Gamma-irradiated SOI nMOSFET

S.Amora^b, V.Kilchytska^a, F.Tounsi^a, N.André^a, M.Machhout^b, L.A.Francis^a, D.Flandre^a

Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET

with in-situ thermal annealing

Solid-State Electronics; 108300; online 7 April 2022, 

DOI: 10.1016/j.sse.2022.108300

   
a SMALL, ICTEAM Institute, Université catholique de Louvain (B)
b Faculté des Sciences de Université de Monastir (TN)

Abstract: This paper demonstrates a procedure for complete in-situ recovery of on-membrane CMOS devices from total ionizing dose (TID) defects induced by gamma radiation. Several annealing steps were applied using an integrated micro-heater with a maximum temperature of 365°C. The electrical characteristics of the on-membrane nMOSFET are recorded prior and during irradiation (up to 348 krad (Si)), as well as after each step of the in-situ thermal annealing. High-resolution current sampling measurements reveal the presence of oxide defects after irradiation, with a clear dominant single-trap signature in the random telegraph noise (RTN) traces. Drain current over time measurements are used for the trap identification and further for the defects' parameters extraction. The power spectral density (PSD) curves confirm a clear dominance of the RTN behavior in the low-frequency noise. A radiation-induced oxide trap is detected at 5.4 nm from the Si-SiO2 interface, with an energy of 0.086 eV from the Fermi level in the bandgap. After annealing, the RTN behavior vanishes with a further important reduction of flicker noise. Low-frequency noise measurements of the transistor confirmed the neutralization of oxide defects after annealing. The electro-thermal annealing of the nMOSFET allows a total recovery of its original characteristics after being severely degraded by radiation-induced defects.

Fig: Device under test : (a) cross-section schematic, (b) microscopic front view

showing the membrane and other embedded elements

[book] The Random and Fluctuating World

The Random and Fluctuating World
Celebrating Two Decades of Fluctuation and Noise Letters

February 2022 Pages: 640

Edited By: 

P V E McClintock (Lancaster University, UK) and 

L B Kish (Texas A&M University, USA)

DOI: 10.1142/12720 | 

Description: It is now almost 20 years since the journal Fluctuation and Noise Letters (FNL) was first published hence this book is to commemorate this important milestone. This book consists of 55 reprinted articles from the first 20 years of FNL, together with a short Introduction explaining their context and significance. In selecting the papers, the Editors had taken into account not only citation counts, but guided also by the perceived interest and scientific importance of the work. All selected articles are arranged across eight themes.

Contents:

• Acknowledgments
• Preface
• Introduction
• Fundamentals of Noise
• Noise in Quantum Systems
• Noise in Complex Systems
• Noise in Biological Systems
• Noise in Materials, Circuitry, Devices and Sensing
• Noise, Computation and Energy Dissipation
• Noise in Finance
• Noise and Security in Communications
• Author Index

Readership: Physicists, chemists, materials scientists, engineers, biologists, medical scientists, IT specialists, social scientists, economists, advanced graduate students.

[paper] Compact Modeling of Flicker Noise in HV MOSFETs

Ravi Goel (Student Member, IEEE), Yogesh Singh Chauhan (Fellow, IEEE) 

Compact Modeling of Flicker Noise in High Voltage MOSFETs and Experimental Validation 

In 2021 IEEE Latin America Electron Devices Conference (LAEDC), pp. 1-4. IEEE, 2021 

DOI: 10.1109/LAEDC51812.2021.9437922

*Department of Electrical Engineering, Indian Institute of Technology Kanpur, India

Abstract: An analytical model of flicker noise (also called 1/f or low frequency noise) for the drift region is developed to formulate a 1/f model for high voltage MOSFETs using the subcircuit approach in this work. For halo doped drain extended MOSFET (DEMOS), the contribution factors of halo, channel and drift regions are obtained to capture anomalous behavior of 1/f noise. Similar to Halo doped DEMOS, for LDMOS, the contribution factors for channel and the drift region are obtained to capture the SID for different drain biases and channel lengths. The proposed model is validated with measurement data of 50V LDMOS and DEMOS.

Fig: Halo doped DEMOS and its sub-circuit equivalent. In halo doped DEMOS, the channel is divided into halo region and channel region, followed by drift region. In LDMOS, the channel is followed by the drift region. CFsh, CFch, and CFdrift are the contribution factors and are calculated using small-signal analysis.

Acknowledgments: The authors thank Sarvesh S. Chauhan for his valuable feedback. This work was partially supported by the Swarna Jayanti Fellowship (Grant No. – DST/SJF/ETA-02/2017- 18) and FIST Scheme (Grant No. – SR/FST/ETII-072/2016) of the Department of Science and Technology, India and Berkeley Device Modeling Center (BDMC).

[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping

M. Banaszeski da Silva, H. P. Tuinhout, A. Zegers-van Duijnhoven, G. I. Wirth and A. J. Scholten

"A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping" 

in IEEE TED, vol. 64, no. 8, pp. 3331-3336, Aug. 2017.
doi: 10.1109/TED.2017.2713301

Abstract: In this paper, we develop a compact physics-based statistical model for random telegraph noise-related low-frequency noise in bulk MOSFETS with laterally uniform doping. The proposed model is suited for modern compact device models, such as PSP, BSIM, and EKV. With our proposed model, one can calculate the expected value and the variability of the noise as a function of bias and device parameters. We validate the model through numerous experimental results from different CMOS nodes, down to 40 nm [read more...]

[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping

A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping

M. Banaszeski da Silva; H. P. Tuinhout; A. Zegers-van Duijnhoven; G. I. Wirth; A. J. Scholten;

in IEEE Transactions on Electron Devices, vol.PP, no.99, pp.1-6
doi: 10.1109/TED.2017.2713301

Abstract: In this paper, we develop a compact physics-based statistical model for random telegraph noise-related low-frequency noise in bulk MOSFETS with laterally uniform doping. The proposed model is suited for modern compact device models, such as PSP, BSIM, and EKV. With our proposed model, one can calculate the expected value and the variability of the noise as a function of bias and device parameters. We validate the model through numerous experimental results from different CMOS nodes, down to 40 nm. [read more...]