[paper] Lorentzian noise spectra in compact models

Nikolaos Makris*†, Loukas Chevas* and Matthias Bucher*

Verilog-A based implementation of Lorentzian noise spectra in compact models

26th International Conference on Noise and Fluctuations - ICNF

17th-20th October 2023 - Grenoble - France

DOI: 10.1109/ICNF57520.2023.10472771

* School of Electrical & Computer Engineering, Technical University of Crete (TUC), GR-73100 Chania, Greece        European University on Responsible Consumption and Production (EURECA-PRO) (Joint affiliation)
† Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas (IESL-FORTH), GR-71110 Heraklion, Greece

Abstract:In this paper, a simple Verilog-A implementation of Lorentzian noise spectra is introduced that can be used in compact models for the frequency-domain simulation of low-frequency noise in electronic devices. For this purpose, a thermal noise source is combined with a low-pass filter as realized using laplace_nd Verilog-A function in order to achieve Lorentzian noise behavior. This modeling approach can be implemented in any Verilog-A compact model and provides the means for bias-dependent Lorentzian trap modeling. This approach is evaluated in commercial simulator. Application examples are provided to demonstrate the capabilities of this approach.

FIG: Bias dependent model implemented in the EKV3 MOSFET model

Acknowledgements: This work was co-funded by the ERASMUS+ Programme of the European Union (Contract number: 101004049 - EURECA-PRO - EAC-A02-2019 / EAC-A02-2019-1). This research has been co-financed by the European Regional Development Fund of the European Union and Greek national funds through the Operational Program Competitiveness, Entrepreneurship and Innovation, under the call RESEARCH - CREATE - INNOVATE (project code: T2EDK-00340).

[book] The Random and Fluctuating World

The Random and Fluctuating World
Celebrating Two Decades of Fluctuation and Noise Letters

February 2022 Pages: 640

Edited By: 

P V E McClintock (Lancaster University, UK) and 

L B Kish (Texas A&M University, USA)

DOI: 10.1142/12720 | 

Description: It is now almost 20 years since the journal Fluctuation and Noise Letters (FNL) was first published hence this book is to commemorate this important milestone. This book consists of 55 reprinted articles from the first 20 years of FNL, together with a short Introduction explaining their context and significance. In selecting the papers, the Editors had taken into account not only citation counts, but guided also by the perceived interest and scientific importance of the work. All selected articles are arranged across eight themes.

Contents:

• Acknowledgments
• Preface
• Introduction
• Fundamentals of Noise
• Noise in Quantum Systems
• Noise in Complex Systems
• Noise in Biological Systems
• Noise in Materials, Circuitry, Devices and Sensing
• Noise, Computation and Energy Dissipation
• Noise in Finance
• Noise and Security in Communications
• Author Index

Readership: Physicists, chemists, materials scientists, engineers, biologists, medical scientists, IT specialists, social scientists, economists, advanced graduate students.

[paper] Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS

T. Komawaki, M. Yabuuchi, R. Kishida, J. Furuta, T. Matsumoto and K. Kobayashi

Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS

2017 IEEE ICICDT, Austin, TX, USA, 2017, pp. 1-4.

doi: 10.1109/ICICDT.2017.7993526

Abstract: As device sizes are downscaled to nanometer, Random Telegraph Noise (RTN) becomes dominant. It is indespensable to accurately estimate the effect of RTN. We propose the RTN simulation method for analog circuits. It is based on the charge trapping model. We replicate the RTN-induced threshold voltage fluctuation to attach a variable DC voltage source to the gate of MOSFET by using Verilog-AMS. We confirm that drain current of MOSFETs temporally fluctuates. The fluctuations of RTN are different for each MOSFET. Our proposed method can be applied to estimate the temporal impact of RTN including multiple transistors. We can successfully replicate RTN-induced frequency fluctuations in 3-stage ring oscillators as similar as the measurement results [read more...]