Jun 12, 2025

[mos-ak] [Media Note] MOS-AK INAOE Workshop, Puebla (MX)

MOS-AK INAOE Workshop on Semiconductor Technologies
Puebla (MX), May 14-16, 2025

Media Note

The MOS-AK Workshop on Semiconductor Technologies was held at the Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE) in Tonantzintla, Puebla, México, on May 14-16, 2025. This workshop was sponsored by MOS-AK, the INAOE, and IEEE through the Puebla Section and the local chapters for the Electron Devices and Instrumentation and Measurements societies. The MOS-AK event was inaugurated by Dr. Wladek Grabinski representing MOS-AK and IHP; Dr. David Sánchez, INAOE's General Director, Dr. Claudia Feregrino, Director of Research and Development for INAOE, and Dr. Roberto Murphy, the local organizer.

The objective of the workshop was to present the various open source tools for the design and simulation of integrated circuits (ICs). It consisted of in person as well as remote keynote speeches by experts in the field, and of a three-hour workshop on digital design synthesis.

The opening talk was by Dr. Wladek Grabinski (MOS-AK), covering a description of all the available FOSS CAD/EDA tools and programs for the design, simulation and fabrication of ICs using OpenPDK. This was a very enlightening run-through of the opportunities that can be exploited by all those who work in the field, at all levels. 

It was followed by a conference by Dr. Joaquín Faneca Ruedas, from the Centro Nacional de Microelectrónica (CNM) in Barcelona, Spain. He spoke about silicon nitride photonics, which is fast becoming a scalable platform for integrated optics. We then had the pleasure of listening to Dr. Medhi Saligane talk on agent AI for analog layout generation. Dr. Saligane is now with Brown University in the US. The first day was closed by a talk on memristor modeling by Dr. Arturo Sarmiento from INAOE. Memristors are fast becoming a common element in IC design, and their modeling and eventual characterization has become a very important field of endeavor in recent years.

The second day was opened by Dr. Colin Shaw from Silvaco (US) who gave a deep description of the status of the Si2 Compact Model Coalition.
The rest of the morning was dedicated to a three-hour workshop on digital circuit synthesis using open source CAD/EDA design tools.

Friday's first talk was by Dr. Harriet Parnell, a senior academic engineer at Ansys, and who gave a talk describing Ansys Lumerical FDTD tool, with a case study of a nanohole array. This was followed by a description of logic technology device innovations, given by Dr. Carlos Díaz, the Senior Director for Research and Development for Taiwan Semiconductor Manufacturing Company (TSMC). This great talk was followed by a presentation of the MOSbius project given by Dr. Peter Kinget, the Bernard J. Lechner Professor of Electrical Engineering at Columbia University. The workshop was closed by a researcher at INAOE, Dr. Reydezel Torres, who spoke of the simulation of chip-to-chip interconnects, another very important aspect of semiconductor technology.

The MOS-AK INAOE workshop was attended by 86 participants, mostly undergrad students but also by professional academicians and scientists. We can call it a success, and we hope that it has contributed to the country's much-needed progress in integrated circuit design and technology.

-- R.Murphy and W.Grabinski 
-- on the behalf of the MOS-AK INAOE Organizing Committee

Enabling Compact Modeling R&D Exchange

RM/WG120625

Jun 11, 2025

[mos-ak] [C4P] 9th Sino MOS-AK Workshop Shenzhen, August 14-16, 2025

Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
9th Sino MOS-AK Workshop Shenzhen
August 14-16, 2025

Announcement and C4P

The International MOS-AK Workshop will be held on Aug. 14-16th, 2025 on- the beautiful campus of the Southern University of Science and Technology (SUSTech), Shenzhen, China. With the aggressive scaling of CMOS technologies and constantly emerging diversified devices, accurate device modeling technique poses severe challenge to circuit and system designers, in particular for RF/MW/mmW/THz/Power/optics. The workshop aims to strengthen a network and discussion forum for experts in the field, provide a forum for the presentation and discussion of the leading-edge research and development results of analytical modeling, compact modeling, characterization and simulation techniques for advanced devices, circuits and technologies. In addition to regular papers, MOS-AK Shenzhen 2025 will host three tutorial/workshop sessions on advanced GaN device modeling and circuit design, cryogenic CMOS modeling and circuit design, and millimeter-wave radar applications.   

Paper Submission: Authors from both academia and industry are invited to submit technical papers describing original work and/or advanced practices and R&D projects

(any related enquiries can be sent to music@sustech.edu.cn)

Online Registration is open (any related enquiries can be sent to music@sustech.edu.cn)

Important Dates:
  • Manuscript submission deadline: 30th June 2025
  • Notification of Acceptance: 10th July 2025
  • Submission of final manuscript: 15th July 2025
  • MOS-AK Workshop:  Aug. 14-16th, 2025
-- Xiaoguang Liu, SUSTech and W.Grabinski for Extended MOS-AK Committee
WG110625
 

Jun 3, 2025

[mos-ak] [2nd Announcement] MOS-AK Workshop, London, July 11, 2025

Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
MOS-AK Workshop, London, July 11, 2025

2nd Announcement and C4P

The Summer MOS-AK Workshop on Compact/SPICE Modeling will take place on July 11, 2025, at London Met. The Conference Centre, room TM3-03, 166-220 Holloway Road, London. This event is coorganized by London MET with the technical cosponsorship of UK IETE and IEEE EDS. We invite you to join us for MOS-AK workshop and learn from the experts in the field of Compact SPICE modeling, Verilog-A standardization and FOSS CAD/EDA IC design support for OpenPDKs.

Planned Summer MOS-AK Workshop at London MET is a forum to strengthen a network and discussion among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring academic and industrial experts in the compact modeling field together, as well as obtain feedback from technology manufacturers, circuit designers, and CAD/EDA tool developers and vendors supporting foundry/fabless interface strategies with the focus on OpenPDKs (eg: Skywater/GF CMOS, IHP RF BiCMOS) 

Important Dates:
  • 2nd Announcement: June 2025
  • Final Workshop Program: June 30, 2025
  • MOS-AK Workshop: July 11, 2025
MOS-AK/London Speakers Tentative List (alphabetic order):
  • Phillip-Ferreira Baade-Pedersen; IHP
  • Mike Brinson; London MET
  • Patryk Golec; Uni. Paris-Saclay
  • Wladek Grabinski, MOS-AK/IHP
  • Krzysztof Herman; IHP
  • Rohith-Karnati Penchala; Pragmatic Semiconductor Ltd.
  • Radu Sporea; Uni. Surrey
  • Bal Virdee; London MET
Online Abstract Submission is open (any related enquiries can be sent to abstracts@mos-ak.org)

Online Free Registration is open (any related enquiries can be sent to registration@mos-ak.org)

02062025


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[ICFOSS] Bridge Course for Eng/BSc Degree Aspirants

Bridge Course for Engineering/BSc Degree Aspirants - Season III

ICFOSS is organizing a "Bridge Course" for Students who have completed their higher secondary education and aspires to pursue Engineering or BSc degrees in fields such as Computer Science, Electronics, Data Analytics, Physics, Mathematics and Statistics. The course will be conducted in two batches, scheduled from 26th to 31st May 2025 and 9th to 14th June 2025This program mainly aims to provide them with the necessary knowledge, skills, and confidence to excel in various fieldsIt equips them with a strong foundation in Python programming and exposure to FOSS principles, setting them on a path for success and support during this transition period from school to college. This also aims to utilize this waiting period effectively by offering relevant educational activities and resources to help students to bridge the gap and stay engaged academically.

This is a combined course of Introduction to Python and Free and Open Source Software (FOSS), which is designed by ICFOSS to introduce students to Python programming and familiarize them with the concept and usage of free and open source software (FOSS). This program not only enhances their technical skills but also instills values of collaboration, knowledge sharing, and innovation that are essential in the field of technology. By the end of the course, students feels confident and well-prepared to tackle the challenges of college-level programming courses.

Objectives: Skill development and readiness for college- The course aims to develop essential skills required for success in college-level Engineering programs and BSc degrees in fields of Computer Science, Electronics, Data Analytics, Physics, Mathematics, and Statistics. It focuses on improving programming proficiency, logical reasoning, algorithmic thinking, and software development practices. The program also aims to support students, helping them stay motivated, engaged, and prepared for their upcoming BSc degrees or engineering programs.

Course Highlights: Live Classes, Structured curriculum by industry veterans, Customized for time flexibility, Custom learning path, Practical experience through simulations and project.

Mode of training: This training program is conducting in offline mode and our systematic approach includes skills assessment, intensive trainings and mentoring that helps valuable learning opportunities and unwavering support to students during this transition period.

Topics:

a) Introduction to Python : Introduction to Programming, Variables and Data Types, Control Flow and Decision Making, Lists, Tuples, and Dictionaries, Functions and Modules, File Handling, Object-Oriented Programming (OOP) Basics, Exception Handling, Deployment Using Flask, Working with External Libraries , Introduction to AI Concepts (Basics of AI, ML overview, Real-world Applications), Flask Project (Hands-on).

b) Free and Open Source Software: Introduction to FOSS, Linux Installation and Basics, Command-Line Basics, User and Group Management, Networking and Remote Access, System Services and Process Management, File System and Storage Management, Overview of FOSS Distros, Products, and Tools.

Target Audience: It is open to students who have completed their higher secondary education and aspires to pursue Engineering or BSc degrees in fields such as Computer Science, Electronics, Data Analytics, Physics, Mathematics, and Statistics.

Prerequisites: It is expected that students have a fundamental understanding of using computers.

Dates:

Name of Program

Dates

Time

Registration Fee

Batch 1

From 26th to 31st May 2025

10.00AM to 5.00 PM

Rs. 4,000/-

Batch 2

From 9th to 14th June 2025

Application Process: 

The number of participants is limited to 30 No.s per batch, on a first-come first-serve basis.

Course Duration: Total of 6 Days (6Hrs/Day)

Registration Fee: Rs. 4,000/-

Application deadline : 07th June 2025

For online payment, the bank accounts details of ICFOSS is provided below:

Account Name

ICFOSS

Account Number

67242303296

IFSC

SBIN0070737

Name of Bank

State Bank of India

Branch

Technopark, Thejaswini, Thiruvananthapuram

For Registration, follow: https://applications.icfoss.org/bridge-course-2025/
Please contact +91 7356610110 | +91 471 2413012 /13 /14 | +91 9400225962
between 10:00-17:00 hrs) for further clarifications.

EDS SCV/SF Hybrid DL Event on Friday June 27

IEEE SCV-SF EDS Distinguished Lecturer Event:
Friday, June 27th, 2025 – 11:30AM to 1PM (PDT)
Dr. Xing Zhou: Monolithic Co-integration of III-V Materials
into Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits

The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter will host a hybrid Distinguished Lecturer event on June 27th at noon PST by Dr. Xing Zhou on the topic of "Monolithic Co-integration of III-V Materials into Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits." The event will be held at Plug and Play Tech center in Sunnyvale, CA and also on zoom. The zoom meeting link will be sent to registered attendees a few days before the event. Event information below. The ticket options for both "In-person" and "On-line" attendance are available. Please select the appropriate ticket so we can get an accurate headcount for ordering food for the event.

Please register here: Link

Imran Bashir
SCV-SF EDS Chair

Distinguished Lecturer Event: Monolithic Co-integration of III-V Materials into Foundry Si-CMOS in a Single Chip for Novel Integrated Circuits

The Electron Devices Society Santa Clara Valley/San Francisco joint Chapter is hosting Dr. Xing Zhou.


When: Friday, June 27th, 2025 – 11:30AM to 1PM (PDT)

11:30AM - 12PM: Networking / Food

12PM-12:45PM: Lecture

12:45PM-12:55PM: Q&A

1PM Adjourn

Where: Rappi Room, Plug and Play Tech Center

440 N Wolfe Rd, Sunnyvale, CA 94085

This is an hybrid event and attendees can participate via Zoom. The Zoom meeting link will be sent a few days before the event to registered attendees.

Contact: ieeescveds at gmail.com

Speaker: Dr. Xing Zhou


Abstract: As Moore's Law is slowing down and eventually approaching an end for conventional CMOS, new platforms for producing circuit-level innovation are desired. At the same time, it is not desirable to throw away the existing Si-CMOS infrastructure to start new. This talk presents an overview of the 10-year research program, which is a "vertical" innovative platform by "inserting" III-V layers into a conventional Si-CMOS foundry process. The talk also presents a unified compact model for generic GaN/InGaAs-based HEMTs in the context of the hybrid III-V + CMOS technology developed for future heterogeneous integrated circuits. The developed model has been implemented in a hybrid III-V/CMOS foundry PDK for designing heterogeneous circuits in III-V/Si monolithically co-integrated technology.

Speaker Bio: Dr. Xing Zhou obtained his B.E. degree in electrical engineering from Tsinghua University in 1983, M.S. and Ph.D. degrees in electrical engineering from the University of Rochester in 1987 and 1990, respectively. He has been with the School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore from 1992 to 2024. His past research interests include Monte Carlo simulation of photocarrier transport and ultrafast phenomena as well as mixed-mode circuit simulation and CAD tool development. His research at NTU mainly focuses on nanoscale CMOS compact model development. His research group has been developing a unified core model for nanoscale bulk, SOI, double-gate, nanowire CMOS, as well as III-V HEMTs. He has given more than 150 IEEE EDS distinguished lectures and invited talks at various universities as well as industry and research institutions. Dr. Zhou was the founding chair for the Workshop on Compact Modeling (WCM) in association with the NSTI Nanotechnology Conference (2002–2018). He was an editor for the IEEE Electron Device Letters (2007–2016), a guest Editor-in-Chief for the special issue of the IEEE Transactions on Electron Devices (Feb. 2014) on compact modeling of emerging devices, and a member of the Modeling & Simulation subcommittee for IEDM (2016, 2017). He was an Elected Member-at-Large of EDS Board of Governors (2004–2009; 2011–2016) and served as Vice-President for Regions/Chapters (2013–2015). He has been an EDS Distinguished Lecturer since 2000. He is a Life Senior Member of the IEEE and currently serves as chair for the RS/EPS/EDS Singapore Joint Chapter.


May 28, 2025

RC and RL circuits and smartphones

Marciano Santamaría Lezcano1 E S Cruz de Gracia2, Lucio Strazzabosco Dorneles3 
and Noriel Correa1
Frequency effect on reactance in RC and RL circuits - a smartphone approach
Phys. Educ. 60 (2025) 035033 (8pp) 
DOI: 10.1088/1361-6552/adc8ec
1 Universidad de Panamá, Departamento de Física, Centro de Investigación con Técnicas Nucleares, Panama City, Panama
2 Universidad Tecnológica de Panama, Centro Regional de Veraguas, Veraguas, Panama
3 Universidade Federal de Santa Maria, Santa Maria, RS, Brazil


emails: evgeni.cruz@utp.ac.pa, marciano.santamaria@up.ac.pa, lucio.dorneles@ufsm.br and noriel.correa@up.ac.pa

Abstract: This paper presents a new and successful methodology for determining the frequency effect on capacitive and inductive reactance in RC and RL series circuits. The key feature in our approach is the practical use of a smartphone as a signal generator and an oscilloscope in alternating current circuits. By generating and visualising the signal using free software applications, we could observe the capacitor's and the inductor's response to frequency variations between 0.1 and 5.0 kHz. The experimental data, analysed within the theoretical capacitive and inductive reactance model, shows excellent agreement with the expected values, instilling confidence in the reliability and feasibility of our methodology. This alignment between experimental and theoretical data not only underscores the potential use of smartphone technology in capacitive and inductive reactance studies but also highlights the practicality of our approach to experimental analysis in science and engineering.


FIG: The connection diagram of (a) RC and (b) RL circuits
shows smartphones working as signal generators and oscilloscopes.

Data availability statement: All data that support the findings of this study are included within the article (and any supplementary files).

Acknowledgments: The authors, M. Santamaría and N. Correa would like to thank the Development Bank of Latin America and the Caribbean (CAF) for financially supporting the Renovation Program of the Faculty of Natural and Exact Sciences and Technology of the University of Panama, which includes the acquisition of instruments used in this research. E S Cruz de Gracia, an SNI member, thanks the Secretaria Nacional de Ciencia, Tecnología e Innovación (SENACYT) for its support. Finally, L.S. Dorneles acknowledges support from CNPq Grant 308277/2021-0.

Apr 29, 2025

[paper] Avalanche Multiplication in SiGe HBTs

Zhang, Huaiyuan, Guofu Niu, Andries J. Scholten, and Marnix B. Willemsen
"Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs"
IEEE Transactions on Electron Devices (2025)
DOI: 10.1109/TED.2025.3558114
1. Auburn University, Auburn, AL, USA
2. NXP, Eindhoven, The Netherlands

Abstract: A new compact model and an extraction method for avalanche multiplication factor (M-1) at high currents are proposed. At a fixed collector–base (CB) voltage (VCB), M-1 first decreases with increasing emitter current (IE) and then increases at higher currents when the Kirk effect occurs. Different forced-IE M-1 extraction techniques are evaluated, including a new compact modeling-based M-1 extraction technique that accurately captures the Early effect, the Kirk effect, and self-heating. The model is implemented in a development version of MEXTRAM and demonstrated experimentally to model both the current and bias dependence of M-1 and base current (IB). 

FIG: Simplified dc equivalent circuit of a transistor under forced IE,VCB 
and  fT(IE) meas/sim up to 150 mA at VCB = 1, 2, and 3 V (b)

Acknowledgment: The authors wish to acknowledge the support of the Compact Model Coalition (CMC).

Apr 26, 2025

Heading to San Francisco for ICMC 2025?

✈️ Heading to San Francisco for ICMC 2025?

The International Compact Modeling Conference (ICMC) is just 2 months away! Be sure to register and secure your room at the Clift Royal Sonesta. Book by May 26 to take advantage of a special discounted rate!

🔗 Register now: https://loom.ly/XmJUtI4
🔗 Reserve your room: https://loom.ly/zyzycVs


hashtag

Apr 25, 2025

[C4P] Micro-Nano 2025

International Conference on Micro- and Nanoelectronics, Nanotechnology and MEMS (MicroNano 2025)

https://2025.micro-nano.gr/



This annual Micro-Nano 2025 conference is organized by the Micro&Nano Scientific Society of Greece and aims to connect people from academia, research and industry, so as to stimulate discussions on the latest scientific achievements and to further promote micro- and nanotechnologies. The conference is held every time in a different city all around Greece, with the most recent one realized in Lemnos (2024). This year's Conference will be held on the island of Crete and is co-organized with the Technical University of Crete.

ABSTRACT SUBMISSION
  • Conference Dates: November 6-9, 2025
  • Submission Opens: will be announced
  • Abstract Submission Final Deadline: will be announced
  • Peer reviewing will follow immediately after submission.








Apr 24, 2025

[paper] Compact OTM-RRAM Characterization Platform

Max Uhlmann, Milosz Krysik, Jianan Wen, Max Frohberg, Andrea Baroni, Keerthi Dorai Swamy Reddy, 
Eduardo Pérez, Philip Ostrovskyy, Krzysztof Piotrowski, Corrado Carta, Christian Wenger, 
and Gerhard Kahmen
A Compact One-Transistor-Multiple-RRAM Characterization Platform
IEEE Transactions on Circuits and Systems I: Regular Papers (2025)
DOI: 10.1109/TCSI.2025.3555234
1. IHP GmbH Frankfurt (Oder) (D)
2. Faculty of Mathematics, Computer Science, Physics, Electrical Engineering and Information Technology, TU Brandenburg (D)
3. Institute of High-Frequency and Semiconductor System Technologies, TU Berlin (D)

Abstract: Emerging non-volatile memories (eNVMs) such as resistive random-access memory (RRAM) offer an alternative solution compared to standard CMOS technologies for implementation of in-memory computing (IMC) units used in artificial neural network (ANN) applications. Existing measurement equipment for device characterisation and programming of such eNVMs are usually bulky and expensive. In this work, we present a compact size characterization platform for RRAM devices, including a custom programming unit IC that occupies less than 1 mm2 of silicon area. Our platform is capable of testing one-transistor-one-RRAM (1T1R) as well as one-transistor-multiple-RRAM (1TNR) cells. Thus, to the best knowledge of the authors, this is the first demonstration of an integrated programming interface for 1TNR cells. The 1T2R IMC cells were fabricated in the IHP's 130 nm BiCMOS technology and, in combination with other parts of the platform, are able to provide more synaptic weight resolution for ANN model applications while simultaneously decreasing the energy consumption by 50%. The platform can generate programming voltage pulses with a 3.3 mV accuracy. Using the incremental step pulse with verify algorithm (ISPVA) we achieve 5 non-overlapping resistive states per 1T1R device. Based on those 1T1R base states we measure 15 resulting state combinations in the 1T2R cells.

FIG. The GDSII layout, schematic (a) and transmission electron microscopic (TEM) cross section image (b) of a 1T1R structure in IHP's 130 nm BiCMOS technology, with its material stack (c) and resitive switching mechanism principle (d).

Acknowledgement: This work was supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Project 434434223–SFB 1461