SISPAD 2014 1st Call for Papers

2014 International Conference on Simulation of Semiconductor Processes and Devices

September 9-11, 2014

Workshop, September 8

Mielparque Yokohama, Yokohama, Japan

The call for papers is also available on SISPAD2014 Web site. Deadline for submission of SISPAD abstracts: March 31, 2014


Any inquiries on submission should be sent to:

• Steering Chair:  Shinji Odanaka  (Osaka Univ)
• Conference Chair:  Nobuya Mori  (Osaka Univ)
• Program Chair:  Kenichiro Sonoda  (Renesas)
• Program Co-Chair:  Shigeyasu Uno  (Ritsumeikan Univ)

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SISPAD Abstract Submission

2014 International Conference on Simulation of Semiconductor Processes and Devices

September 9 – 11, 2014

Workshop, September 8

Mielparque Yokohama, Yokohama, Japan

Deadline for submission of SISPAD abstract: March 1, 2014

Any inquiries on submission should be sent to:

• Program Chair:  Ken’ichiro Sonoda (Renesas)
• Program Co-Chair:  Shigeyasu Uno (Ritsumeikan Univ)

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10th IWCM Workshop Program

10th International Workshop on Compact Modeling 

January 22 (Tue), 2013 

Pacifico Yokohama, Room 419

Yokohama, Japan

Time	#	Title	Authors	Affiliation
9:00-9:10		Opening: H. J.  Mattausch (Workshop Chair)
		Power Devices   Chair: D. Navarro
9:10-9:30	1	HiSIM_HV Temperature Modeling for Multi-Geometry LDMOS: Comparison of the Temperature Flag Options	Y. Iino	Silvaco Japan
9:30-9:50	2	Analysis and Further Improvements of the Drain-Resistance Modeling in HiSIM_HV	T. Umeda et al.	Hiroshima University
9:50-10:10	3	Floating-Base Effect Modeling for IGBT Structure using Potential Modification	T. Yamamoto et al.	Denso
10:10-10:30		- Break -
		Novel FET Structures Chair: T. Nakagawa
10:30-10:50	4	Study on Dynamic Threshold Nanowire Tunnel FET	A. Zhang et al.	Peking University Shenzhen
10:50-11:10	5	A DC Model of TFETs for SPICE Simulations	L. Zhang and M. Chan	HK UST
11:10-11:30	6	A Surface Potential Based Compact Model of Organic Thin-Film Transistor for Circuit Simulation	T.K. Maiti et al.	Hiroshima University
11:30-11:40		-  Break -
		Optical and Wireless Chair: J. He
11:40-12:00	7	An Embedded Modulation of Silicon Germanium FIN-LED - A simulation study	J. Kwon et al.	Seoul National University
12:00-12:20	8	Predicting Key Parameters of Inductive Power Links	S. Raju et al.	HK UST
12:20-14:00		- Lunch Break -
		Aging and Degradation Chair: M. Miura-Mattausch
14:00-14:40	9	Invited Keynote: Interaction of Bloch Carrier and Bound State in the Reliability Modeling	Y.J. Park and S. Choi	Seoul National University
14:40-15:00	10	Development of Unified Predictive NBTI Model and its Application for Circuit Aging Simulation	C. Ma et al.	Hiroshima University, STARC
15:00-15:20	11	Effects of Nonlocal Concentration of Carriers in the Oxide for NBTI Simulation	S. Rhee et al.	Seoul National University
15:20-15:40		-  Break -
		Fabrication Variation Chair: Y. J. Park
15:40-16:00	12	Parameter Extraction for Statistical Variation of HV-MOSFETs	Y. Ueda et al.	Ricoh, STARC
16:00-16:20	13	Analysis of Gate-Length Dependence of MOSFET Random Variation by Using HiSIM-RP	S. Kumashiro et al.	Renesas Electronics
16:20-16:40	14	Random Dopant Fluctuation Effects on Double Gate Tunneling FET Performance	Y. Zhu et al.	Peking University Shenzhen
16:40-16:50		Closing: H.J. Mattausch (Workshop Chair)