[C4P] IJNM - 7th Sino MOS-AK Workshop

Call for Papers

Special issue on the 7th International Sino MOS-AK Workshop

Submission deadline: Sunday, 31 December 2023

The 7th International Sino MOS-AK Workshop was held on 11-13th August 2023 in Nanjing, China. MOS-AK working group has more than 20 years enabling  compact modeling  R&D exchange. For additional detailed info, please refer to MOS-AK website:
http://www.mos-ak.org/nanjing_2023/.

With the aggressive scaling of CMOS technologies and constantly emerging diversified devices, accurate device modeling technique poses severe challenge to circuit and system designers, in particular for RF/MW/mmW/THz/Power/optics. With this background, the workshop aims to strengthen a network and discussion forum among experts in the field, provide a forum for the presentation and discussion of the leading-edge research and development results of Analytical Modeling, Compact Modeling, Characterization and Simulation techniques for advanced devices, circuits and technologies. Modeling and validation technique of all solid-state devices, including, Si, III-V, power, nanoscale electronic structures and other related new devices are within the scope of the conference. The theme of MOS-AK is "Bridge of Process Technology and Integrated Circuits & Systems Design".

Topics for this call for papers include but not restricted to:

• Advances in semiconductor technologies and processing (CMOS, SOI, FINFET, III-V, Wide band-gap)
• CM of passive active, sensors, and actuators
• Emerging Devices, photonic devices, CMOS, and SOI-based memory cell
• RF/THz device and Power device modeling
• Power device and Power integration
• Reliability modeling
• AI and machine learning in EDA & modeling application
• Nanoscale CMOS devices and circuits
• Verilog-A language for CM standardization
• New CM techniques and extraction software
• Open-source TCAD/EDA modeling and simulation
• Technology R&D, DFY, DFT and IC Designs
• Chiplet Modeling and Packaging-related modeling
• Foundry/Fabless Interface Strategies, Open Access PDKs
• DTCO & STCO-related EDA tools/technologies
• Other related topics

Guest Editors:

• Jun Zhang
  Nanjing University of Posts and Telecommunications (CN)
• Yuehang Xu
  University of Electronic Science and Technology of China (CN)
• Wladek Grabinski
  MOS-AK (EU)

Submission Guidelines/Instructions

Authors of papers presented at the conference will be invited to submit an extended paper by 31 December 2023 to a special issue of IJNM. Manuscripts for this special issue should adhere to the requirements for regular papers in IJNM as specified in the journal’s Author Guidelines. The manuscripts will be submitted via the IJNM manuscript submission site, https://wiley.atyponrex.com/journal/jnm. Authors must choose the special issue title from the dropdown list on the “Additional Information” tab.

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[special issue] on Modeling of μmWave and mmWave Electronic Devices for Wireless Systems

Guest editorial for the special issue 

on Modeling of μmWave and mmWave Electronic Devices for Wireless Systems: 

Connecting technologies to applications

Valeria Vadalà, Giovanni Crupi

First published: 27 July 2021; DOI: 10.1002/jnm.2940

The μmWave and mmWave frequencies have been historically associated with niche applications such as space and defense; however, in the last years wireless communications have caused a rapid growth of interest in mass-market applications, representing the enabling technology for the new Information Age where all “things” need to be connected. Internet of Things, Industry 4.0, and Smart Cities are portraits of this concept in different contexts, from entertainment to healthcare applications. This exciting scenario triggers the continuous increase of performance requirements such as huge bandwidth, low latency, and very high data rate of emerging wireless technologies (i.e., 5G and 6G). This special issue takes a step forward in the different branches of knowledge related to μmWave and mmWave devices, circuits, and systems, oriented to wireless applications from the device level up to the application level. From the reader's point of view, the goal is to drive to a comprehensive overview on salient aspects of these topics and to provide interesting hints to overcome the upcoming technological challenges.

REFERENCES:
[1] Cao K-J, Zhang A, Gao J-J. Sensitivity analysis and uncertainty estimation in small-signal modeling for InP HBT (invited paper). Int J Numer Model El. 2021; 34(5): 2851. DOI: 10.1002/jnm.2851
[2] Tang X, Yang T, Jia Y, Xu Y. FW-EM-based approach for scalable small-signal modeling of GaN HEMT with consideration of temperature-dependent resistances. Int J Numer Model El. 2021; 34(5):e2882. DOI: 10.1002/jnm.2882
[3] King JB. Efficient energy-conservative dispersive transistor modelling using discrete-time convolution and artificial neural networks. Int J Numer Model El. 2021; 34(5): 2894. DOI: 10.1002/jnm.2894
[4] Li Y, Mao S, Fu Y, et al. A scalable electrothermal model using a three-dimensional thermal analysis model for GaN-on-diamond high-electron-mobility transistors. Int J Numer Model El. 2021; 34(5):e2875. DOI: 10.1002/jnm.2875
[5] Alim MA, Ali MM, Crupi G. Measurement-based analysis of GaAs HEMT technologies: Multilayer D-H pseudomorphic HEMT versus conventional S-H HEMT. Int J Numer Model El. 2021; 34(5):e2873. DOI: 10.1002/jnm.2873
[6] Osmanoglu S, Ozbay E. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit. Int J Numer Model El. 2021; 34(5):e2859. DOI: 10.1002/jnm.2859
[7] Piacibello A, Costanzo F, Giofré R, et al. Evaluation of a stacked-FET cell for high-frequency applications (invited paper). Int J Numer Model El. 2021; 34(5):e2881. DOI: 10.1002/jnm.2881
[8] Wu M, Cai J, King J, Chen S, Su J, Cao W. Design of a multi-octave power amplifier using broadband load-pull X-parameters. Int J Numer Model El. 2021; 34(5):e2878. DOI: 10.1002/jnm.2878
[9] Abdulbari AA, Abdul Rahim SK, Soh PJ, Dahri MH, Eteng AA, Zeain MY. A review of hybrid couplers: State-of-the-art, applications, design issues and challenges. Int J Numer Model El. 2021; 34(5):e2919. DOI: 10.1002/jnm.2919
[10] Piltyay S, Bulashenko A, Sushko O, Bulashenko O, Demchenko I. Analytical modeling and optimization of new Ku-band tunable square waveguide iris-post polarizer. Int J Numer Model El. 2021; 34(5):e2890. DOI: 10.1002/jnm.2890
[11] Qas Elias BB, Soh PJ, Abdullah Al-Hadi A, Vandenbosch GAE. Design of a compact, wideband, and flexible rhombic antenna using CMA for WBAN/WLAN and 5G applications. Int J Numer Model El. 2020; 34(5):e2841. DOI: 10.1002/jnm.2841
[12] Zhang X, Cunjun R, Dai J, Ding Y, Ullah S, Kosar Fahad A. Design of a reconfigurable antenna based on graphene for terahertz communication. Int J Numer Model El. 2021; 34(5):e2911. DOI: 10.1002/jnm.2911
[13] Gatte MT, Soh PJ, Kadhim RA, Abd HJ, Ahmad RB. Modeling and performance evaluation of antennas coated using monolayer graphene in the millimeter and sub-millimeter wave bands. Int J Numer Model. 2021; 34(5):e2929. DOI: 10.1002/jnm.2929
[14] Xing C, Qi F, Liu Z, Wang Y, Guo S. Terahertz compressive imaging: understanding and improvement by a better strategy for data selection. Int J Numer Model El. 2021; 34(5):e2863. DOI: 10.1002/jnm.2863

Publication stats: 1260 Reads

1260 Reads: Open-source circuit simulation tools for RF compact semiconductor device modelling

Article · Sep 2014 · International Journal of Numerical Modelling Electronic Networks Devices and Fields

IJNM Call for Papers

Advances in simulation-driven modeling and optimization of microwave/RF circuits

IJNM Call for Papers

Computer-aided modeling and design of microwave/radio frequency (RF) devices and circuits have undergone tremendous developments in the past decade. The complexity of today's devices and circuits renders electromagnetic (EM) simulation a sine qua non in the microwave design process. That said, EM-driven design poses significant challenges, mostly due to the high computational cost of accurate, high-fidelity simulation. The availability of massive computational resources does not always translate into design speedup because of the need to account for interactions between devices and their surroundings as well as multi-physics (e.g., EM-thermal) effects. Not surprisingly, traditional design optimization procedures that directly utilize EM-simulated responses typically fail or are impractical. As a consequence, there is growing interest in alternative optimization and modeling methodologies, especially ones that exploit computationally cheap surrogate models.

This Special Issue focuses on the current state of the art and future directions in microwave and RF design. Papers on software engineering and practical applications aspects are also encouraged. Suitable topics for this Special Issue therefore include but are not limited to

• surrogate-based modeling and optimization methods including space mapping;
• knowledge-based and tuning methodologies;
• global optimization, evolutionary algorithms, particle swarm optimization, and so on;
• multi-objective optimization;
• adjoint-sensitivities for efficient gradient-based optimizers;
• optimization techniques for nonlinear circuits;
• software architectures for optimization-oriented design;
• automated design optimization using EM simulators;
• optimization for inverse EM problems;
• neural network approaches; and
• optimization for discrete problems.

Manuscripts for this Special Issue should adhere to the requirements for regular papers of the IJNM as specified in the Author Guidelines at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1099-1204/homepage/ForAuthors.html

Potential contributors may contact the guest editor to determine the suitability of their contribution to the Special Issue. All manuscripts should be submitted via the IJNM's manuscript website http://mc.manuscriptcentral.com/ijnm, with a statement that they are intended for this Special Issue.

Manuscript submission deadline: January 31, 2015

Prof. Slawomir Koziel
Engineering Optimization and Modeling Center, 
School of Science and Engineering, 
Reykjavik University, Reykjavik, Iceland

1. 
   

New IJNM Paper

 
Open-source circuit simulation tools for RF compact semiconductor device modelling (Invited Paper)
 
Wladek Grabinski (Editor), Mike Brinson, Paolo Nenzi, Francesco Lannutti, Nikolaos Makris, Angelos Antonopoulos and Matthias Bucher
 
Keywords:
CAD; GNU; Qucs; QucsStudio; ngspice; compact modelling; EKV3; RF; MOSFET; Verilog-A
 
Article first published online: 18 MAR 2014 DOI: 10.1002/jnm.1973

Call for IJNM papers: Noise modeling of high-frequency semiconductor devices

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS Int. J. Numer. Model. (2014)

Call for IJNM papers: Noise modeling of high-frequency semiconductor devices 

Noise processes in solid-state active devices often determine their fundamental operational limits. This is especially true in situations where a device operates under tight sensitivity and accuracy constraints, as is the case in satellite communication systems, aerospace instrumentation, and deep-space radio astronomy. Today’s ultra-high frequency transistors that meet these demanding low-noise performance characteristics often leverage progressive device downscaling techniques in conjunction with improved semiconductor alloys. 

To enable the design of next-generation low-noise devices, however, accurate and flexible models that characterize the connection between the physics of microscopic noise processes and measurable macroscopic performance are called for. The objective of this Special Issue is to collect and disseminate recent results addressing the topic of modeling and simulation of the macroscopic noise performance of high- frequency transistors including but not limited to GaAs-based and GaN-based field-effect transistors, Si metal–oxide–semiconductor FETs and FinFETs, InP-based high-electron-mobility transistors, and GaAs and SiGe heterojunction bipolar transistors. It is worth pointing out that because of frequency up-conversion phenomena caused by a device’s nonlinearities, low frequency noise processes may strongly impact microwave and millimeter wave behavior as well. Contributions focusing on low-frequency noise modeling therefore will be considered as well. 

This issue will include both invited and contributed manuscripts.

Manuscripts for this Special Issue should adhere to the requirements for regular papers of the IJNM as specified in the Author Guidelines at 

http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1099-1204/ homepage/ForAuthors.html. 

Potential contributors may contact the Guest Editors to determine the suitability of their contribution to the Special Issue. All manuscripts should be submitted via the IJNM’s manuscript website, with a statement that they are intended for this Special Issue. 

Guest Editors: 
Prof. Alina Caddemi University of Messina, Italy Email:
Prof. Ernesto Limiti University of Rome Tor Vergata, Italy Email:

Manuscript submission deadline: July 31, 2014

Call for IJNM Papers: Modeling of high-frequency silicon transistors

Silicon transistors (STs) have been the workhorse of the electronics industry ever since its inception. Although STs historically have been used primarily in digital and low-frequency analog applications, they increasingly are being adopted for high-frequency analog purposes as well. This trend is fueled by the introduction of new fabrication methods, novel materials, and transistor architectures that permit aggressive downscaling into the nanometer regime. Along these lines, considerable attention currently is being devoted to the FinFET, which is an innovative multiple-gate field effect transistor offering the important advantage of being compatible with conventional planar CMOS technology.

Modeling and simulation are indispensable in the development of high-frequency STs. Indeed, ST models and simulations provide indispensable feedback for improving device fabrication processes and serve as a valuable tool for optimizing circuit designs. Unfortunately, the predictive power of modeling and simulation techniques for STs for digital and low-frequency applications oftentimes diminishes when applied to high-frequency analog STs. For modeling and simulation methods to drive the development of high-frequency ST technology, they must adapt as well. 

The purpose of this Special Issue is to publish high-quality contributions addressing the modeling and simulation of high-frequency STs. A wide range of topics will be covered, ranging from bipolar to ?eld effect transistors and from linear to noise and non-linear models. Although the main focus of the Special Issue will be the extraction of high-frequency models, papers addressing other aspects of ST modeling will be considered as well. This issue will contain both invited and contributed papers. Manuscripts for this Special Issue should adhere to the requirements for regular papers of the IJNM as specified in the Author Guidelines at http://onlinelibrary.wiley.com/journal/10.1002/ (ISSN)1099-1204/homepage/ForAuthors.html.

Potential contributors may contact the Guest Editors to determine the suitability of their contribution to the Special Issue. All manuscripts should be submitted via the IJNM’s manuscript website http://mc.manuscriptcentral.com/ijnm, with a statement that they are intended for this Special Issue.

Guest Editors:

• Dr. Giovanni Crupi
  University of Messina, Italy
  E-mail: crupig@unime.it
• Prof. Dominique Schreurs
  University of Leuven, Belgium
  E-mail: dominique.schreurs@esat.kuleuven.be
• Prof. Alina Caddemi
  University of Messina, Italy
  E-mail: acaddemi@unime.it

Manuscript submission deadline: April 30, 2013