Future Horizons' Annual Semiconductor Industry Forecast Webinar

Registration Now Open

Will the current shortages continue through 2022? Find out the answer to this and other key questions at IFS2022, Future Horizons' Annual Semiconductor Industry Forecast Webinar:
https://www.futurehorizons.com/page/135/

When?  Tue 18 Jan 2022 - 3pm GMT (7am PST / 10am EST / 4pm CET / 12pm JST)

Where?  https://us02web.zoom.us/webinar/register/9316413197665/WN_qS4a7ZdmTzGZKJiT3_dpBA

Why?  We were the only analyst to correctly predicted 2021's supercycle and product shortages at last year's IFS event, based on our proven methodology and 55 plus years of direct industry experience, longer than any other analyst and most industry execs. Now in its 34th year, our experience and track record makes this a must-attend event for key decision makers in the semiconductor, electronics and all related industries. We pride ourselves on the integrity of our work and the rigour and discipline employed in everything we do, not least of which is our commitment to accurate and usable information. We are never afraid take a contrarian view, backed up by data and sound analytical process, which is why our industry forecasts have consistently proved both accurate and insightful, second to no-one. Find out what's in store for 2022 at IFS2022, Future Horizons' annual industry outlook webinar.

What You Will Learn
This one-hour broadcast will focus primarily on the semiconductor industry forecast and outlook for 2022, including:
• Valuable insight about the industry's future growth
• What causes cyclicality and the supply chain fundamentalities
• How demand will shift in the short and medium-term
• An understanding of the exposure, vulnerabilities, opportunities, losses and gains
• Data and analysis to inform resilient strategies and reimagine business models
•  Answers to questions like "When will the shortages end?" and "What will the likely repercussions be?"
Just like our live events, there will be ample opportunity to ask specific questions in advance, during and after the webinar.

Who Should Attend?
• All companies, small and large, from startups to established market leaders
• Key decision-makers engaged in the design, fabrication or supply of semiconductors
• Government organisations involved in trade and investment
• Those involved in investing or banking within the electronics industry
• Senior marketing executives planning future marketing strategy

Why Future Horizons?
We have been in the business of forecasting and analysing the semiconductor market for over 55 years and have been a trusted advisor to governments, investors and most of the top global semiconductor firms. Time and time again we have delivered sound advice and saved our clients time and money with our forensic and accurate analysis of the industry.

Book Your Seat Today (Spaces are limited)
https://us02web.zoom.us/webinar/register/3616293135785/WN_9dsYHWvMTpaUAVf1cEIV3A

For a small investment of £150 plus £30 UK VAT you will gain accurate industry insight to make good strategic decisions in these uncertain times
• Discount available for 3 or more attendees from the same company/organisation
• Site license option for unlimited company participation
• Can't attend? Order the webinar material only
• Please pass to a colleague if already attended or not suitable for you
• This event can also be held in-house for your added convenience and flexibility

Malcolm Penn
Chairman & CEO

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[paper] Ultrafast imaging of THz electric waveforms using quantum dots

Moritz B. Heindl, Nicholas Kirkwood, Tobias Lauster, Julia A. Lang, Markus Retsch, Paul Mulvaney and Georg Herink;

Ultrafast imaging of terahertz electric waveforms using quantum dots;

Light: Science & Applications; Vol. 11, No. 5 (2022)

DOI: 10.1038/s41377-021-00693-5

Abstract: Microscopic electric fields govern the majority of elementary excitations in condensed matter and drive electronics at frequencies approaching the Terahertz (THz) regime. However, only few imaging schemes are able to resolve sub-wavelength fields in the THz range, such as scanning-probe techniques, electro-optic sampling, and ultrafast electron microscopy. Still, intrinsic constraints on sample geometry, acquisition speed and field strength limit their applicability. Here, we harness the quantum-confined Stark-effect to encode ultrafast electric near-fields into colloidal quantum dot luminescence. Our approach, termed Quantum-probe Field Microscopy (QFIM), combines far-field imaging of visible photons with phase-resolved sampling of electric waveforms. By capturing ultrafast movies, we spatio-temporally resolve a Terahertz resonance inside a bowtie antenna and unveil the propagation of a Terahertz waveguide excitation deeply in the sub-wavelength regime. The demonstrated QFIM approach is compatible with strong-field excitation and sub-micrometer resolution introducing a direct route towards ultrafast field imaging of complex nanodevices in-operando.

Fig: Quantum-Probe Field Microscopy (QFIM): a.) Imaging of THz electric near-fields in a fluorescence microscope using quantum dot (QD) luminescence. The absorption of ultrashort visible sampling pulses (green) is modulated via the quantum-confined Stark effect in a layer of nanocrystals (red); b.) The THz-induced change in the QD band structure can increase the absorption and translates to enhanced luminescence emission, accessible by optical microscopy. The modulated fluorescence yield SQFIM = STHz−S0 encodes the instantaneous local electric field and snapshot images resolve the spatio-temporally evolution of the near-field waveform

Acknowledgements: We [the authors] thank J. Koehler and M. Lippitz for experimental equipment and valuable discussions. This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) via project 403711541. T.L. acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research program (grant agreement no. 714968). N.K. and P.M. thank the ARC for support through grant CE170100026. Open Access funding enabled and organized by Projekt DEAL.

[paper] A Review of Sharp-Switching Band-Modulation Devices

Sorin Cristoloveanu¹, Joris Lacord², Sébastien Martinie², Carlos Navarro³, Francisco Gamiz³, Jing Wan⁴, Hassan El Dirani¹, Kyunghwa Lee¹ and Alexander Zaslavsky⁵

A Review of Sharp-Switching Band-Modulation Devices

Micromachines 2021, 12, 1540.

DOI: 10.3390/mi12121540

   
1 IMEP-LAHC, Université Grenoble Alpes (F)
2 CEA, LETI, MINATEC Campus (F)
3 CITIC-UGR, University of Granada (SP)
4 Fudan University, Shanghai (CN)
5 Brown University, Providence (US)

Abstract: This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation.

Fig: Average subthreshold swing SS vs. normalized ION plot. 

Green points indicate CMOS-compatible materials.

Acknowledgements: The European authors are grateful for support from the EU project REMINDER (H2020-687931). Alexander Zaslavsky acknowledges the support of the U.S. National Science Foundation (award QII-TACS-1936221).

[book] Advanced ASM-HEMT Model for GaN HEMTs

Sourabh Khandelwal

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

A New Industry-Standard Compact Model 

for GaN-based Power and RF Circuit Design

DOI: 10.1007/978-3-030-77730-2

eBook ISBN: 978-3-030-77730-2

Describes in detail a new industry standard for GaN-based power and RF circuit design. Includes discussion of practical problems and their solutions in GaN device modeling. Covers both radio-frequency (RF) and power electronics application of GaN technology and describes SPICE modeling of both GaN RF and power devices.

Table of contents:

• Front Matter; pp. i-xv
• Gallium Nitride Semiconductor Devices; pp. 1-8
• Compact Modeling; pp. 9-19
• Introduction to ASM-HEMT Compact Model; pp. 21-31
• Core Formulations in ASM-HEMT Model; pp. 33-45
• Non-ideal Effects in Device Current and Their Modeling; pp. 47-62
• Trapping Models; pp. 63-81
• Non-Ideal Effects in GaN Capacitances and Their Modeling; pp. 83-100
• Gate Current Model; pp. 101-113
• Effect of Ambient Temperature on GaN Device; pp. 115-124
• Noise Models; pp. 125-130
• Parameter Extraction in ASM-HEMT Model; pp. 131-150
• Advance Simulations with ASM-HEMT Model; pp. 153-174
• Resources for ASM-HEMT Model Users; pp. 175-175
• Back Matter; pp. 175-188

About the author:

Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University, Sydney. He is the lead developer of ASM--HEMT compact model, which is a new industry standard compact model for GaN RF and power devices. Earlier to this role, Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California, Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design.

[https://t.co/vKeanjzJ3k] Global chip shortage; Is engineer shortfall the next big problem? #semi #engineers #electronics #chips #design https://t.co/0EZI1EVmDv

[https://t.co/vKeanjzJ3k] Global chip shortage; Is engineer shortfall the next big problem? #semi #engineers #electronics #chips #design https://t.co/0EZI1EVmDv

— Wladek Grabinski (@wladek60) Jan 4, 2022

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from Twitter https://twitter.com/wladek60

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